Patents by Inventor Yung-Han Huang

Yung-Han Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250239101
    Abstract: A computing device obtains an image of a user and detects a facial region of the user within the image. The computing device detects facial landmark points within the facial region and extracts facial features based on the detected facial landmark points. The computing device calculates traits of the user based on the extracted facial features and calculates one or more personality types of the user based on the traits of the user.
    Type: Application
    Filed: April 11, 2025
    Publication date: July 24, 2025
    Inventor: Yung-Han HUANG
  • Publication number: 20220358786
    Abstract: A computing device obtains an image of a user and detects a facial region of the user within the image. The computing device detects facial landmark points within the facial region and extracts facial features based on the detected facial landmark points. The computing device calculates traits of the user based on the extracted facial features and calculates one or more personality types of the user based on the traits of the user.
    Type: Application
    Filed: April 26, 2022
    Publication date: November 10, 2022
    Inventor: Yung-Han HUANG
  • Publication number: 20210202782
    Abstract: The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.
    Type: Application
    Filed: December 26, 2019
    Publication date: July 1, 2021
    Inventors: Yung-Han Huang, Chung-Yen Lu, Jian-Long Ruan
  • Patent number: 11049993
    Abstract: The present invention adopts an aluminum nitride substrate with great heat dissipation, great thermal conductivity, high electrical insulation, long service life, corrosion resistance, high temperature resistance, and stable physical characteristics. A high-quality zinc oxide film with a wide energy gap is fabricated on the aluminum nitride substrate by magnetron radio frequency (RF) sputtering. Compared with general vapor deposition, chemical vapor deposition and hydrothermal, the magnetron RF sputtering grows the high-quality zinc oxide film with few defects. The zinc oxide film with few defects concentration is an important key technology for short-wavelength optoelectronic devices, which decrease leakage currents of the optoelectronic devices, reduces flicker noise, and further improves its UV-visible rejection ratio.
    Type: Grant
    Filed: December 26, 2019
    Date of Patent: June 29, 2021
    Assignee: National Chung-Shan Institute of Science and Technology
    Inventors: Yung-Han Huang, Chung-Yen Lu, Jian-Long Ruan
  • Publication number: 20190172986
    Abstract: A manufacturing method of a high reflection mirror with polycrystalline aluminum nitride includes (A) providing a polycrystalline aluminum nitride substrate having a polished surface, and utilizing a magnetron sputtering apparatus to react an aluminum target and a plasma formed of nitrogen and argon for forming an aluminum nitride film on the surface of the polycrystalline aluminum nitride substrate, wherein the aluminum nitride film fills into a hole or a gap generated by a lattice defect of the surface of the polycrystalline aluminum nitride substrate; (B) thinning, grinding and polishing the aluminum nitride film for planarizing the polycrystalline aluminum nitride substrate; (C) forming an aluminum coating layer on the aluminum nitride film by a vacuum coating apparatus; (D) forming a sliver coating layer on the aluminum coating layer by another vacuum coating apparatus; and (E) forming a surface-protecting layer on the sliver coating layer.
    Type: Application
    Filed: July 12, 2018
    Publication date: June 6, 2019
    Inventors: Chung-Yen Lu, Yung-Han Huang
  • Patent number: 9216906
    Abstract: A method for manufacturing aluminum nitride powder includes steps of: preparing a polymer powder, a wood powder having grain size similar with that of the polymer powder, and an alumina powder; and mixing the polymer powder, the wood powder and the alumina powder uniformly and forming granules to be carried out a single-replacement reaction by exposing the granules in a nitrogen-containing atmosphere at a temperature of 1680-1850° C.
    Type: Grant
    Filed: December 25, 2013
    Date of Patent: December 22, 2015
    Assignee: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Yang-Kuao Kuo, Yung-Han Huang, Cheng-Hung Shih, Lea-Hwung Leu
  • Publication number: 20150175421
    Abstract: A method for manufacturing aluminum nitride powder includes steps of: preparing a polymer powder, a wood powder having grain size similar with that of the polymer powder, and an alumina powder; and mixing the polymer powder, the wood powder and the alumina powder uniformly and forming granules to be carried out a single-replacement reaction by exposing the granules in a nitrogen-containing atmosphere at a temperature of 1680-1850° C.
    Type: Application
    Filed: December 25, 2013
    Publication date: June 25, 2015
    Applicant: Chung-Shan Institute of Science and Technology, Armaments Bureau, M.N.D.
    Inventors: Yang-Kuao Kuo, Yung-Han Huang, Cheng-Hung Shih, Lea-Hwung Leu
  • Publication number: 20140322564
    Abstract: A battery includes: a container; an electrolyte received in the container; and first and second electrodes disposed in the electrolyte and having different electrical potentials upon exposure to the electrolyte.
    Type: Application
    Filed: July 14, 2014
    Publication date: October 30, 2014
    Inventors: Yung-Han HUANG, Pei-Jung HUANG, Chien-Ho HUANG, Tsung-Tien KUO
  • Publication number: 20110097611
    Abstract: A battery includes: a container; an electrolyte received in the container; and first and second electrodes disposed in the electrolyte and having different electrical potentials upon exposure to the electrolyte.
    Type: Application
    Filed: October 26, 2010
    Publication date: April 28, 2011
    Applicant: TAIWAN HOPAX CHEMICALS MFG. CO., LTD.
    Inventors: Chien-Ho Huang, Yung-Han Huang, Pei-Jung Huang, Tsung-Tien Kuo