Patents by Inventor Yung-Hee Yvette Lee
Yung-Hee Yvette Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9054708Abstract: A touch sensor using a graphene diode and/or a touch panel including the touch sensor. The touch sensor includes a first sensing electrode configured to sense a touch; a first output line configured to transmit an electrical signal; and a first diode device including a first control terminal connected to the first sensing electrode, a first anode terminal connected to a voltage application unit, and a first cathode terminal connected to the first output line.Type: GrantFiled: January 9, 2013Date of Patent: June 9, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang-wook Kim, Seong-jun Park, David Seo, Young-jun Yun, Yung-hee Yvette Lee, Chang-seung Lee
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Patent number: 8742400Abstract: A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode.Type: GrantFiled: April 12, 2013Date of Patent: June 3, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: David Seo, Sang-wook Kim, Seong-jun Park, Young-jun Yun, Yung-hee Yvette Lee, Chang-seung Lee
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Publication number: 20130277644Abstract: A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode.Type: ApplicationFiled: April 12, 2013Publication date: October 24, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: David SEO, Sang-wook KIM, Seong-jun PARK, Young-jun YUN, Yung-hee Yvette LEE, Chang-seung LEE
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Publication number: 20130168640Abstract: An inverter device including a tunable diode device and a diode device that includes a control terminal connected to an input terminal of the inverter device, an anode terminal connected to a high-level voltage terminal, and a cathode terminal connected to an output terminal of the inverter device, wherein the diode device is configured to turn on or off according to a voltage applied to the control terminal.Type: ApplicationFiled: August 30, 2012Publication date: July 4, 2013Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-jun YUN, Sang-wook KIM, Seong-jun PARK, David SEO, Yung-hee Yvette LEE, Chang-seung LEE
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Patent number: 8202441Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.Type: GrantFiled: March 22, 2010Date of Patent: June 19, 2012Assignee: Applied Materials, Inc.Inventors: Madhavi R. Chandrachood, Nicole Sandlin, Yung-Hee Yvette Lee, Jian Ding
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Publication number: 20100178600Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.Type: ApplicationFiled: March 22, 2010Publication date: July 15, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Madhavi R. Chandrachood, Nicole Sandlin, Yung-Hee Yvette Lee, Jian Ding
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Patent number: 7737040Abstract: An anti-reflective hard mask layer left on a radiation-blocking layer during fabrication of a reticle provides functionality when the reticle is used in a semiconductor device manufacturing process.Type: GrantFiled: November 9, 2007Date of Patent: June 15, 2010Assignee: Applied Materials, Inc.Inventors: Christopher Dennis Bencher, Melvin Warren Montgomery, Alexander Buxbaum, Yung-Hee Yvette Lee, Jian Ding, Gilad Almogy, Wendy H. Yeh
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Patent number: 7682518Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.Type: GrantFiled: December 28, 2006Date of Patent: March 23, 2010Assignee: Applied Materials, Inc.Inventors: Madhavi R. Chandrachood, Nicole Sandlin, Yung-Hee Yvette Lee, Jian Ding
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Patent number: 7521000Abstract: Method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal layer disposed on an optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, and a chlorine-free halogen containing gas, and optionally, an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.Type: GrantFiled: August 25, 2004Date of Patent: April 21, 2009Assignee: Applied Materials, Inc.Inventors: Madhavi R. Chandrachood, Nicole Sandlin, Yung-Hee Yvette Lee, Jian Ding
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Publication number: 20080164819Abstract: Provided is a semiconductor apparatus using an ion beam. The semiconductor apparatus may include a first grid to which a voltage applied. The voltage applied to the first grid may have the same potential level as that of a reference voltage applied to a wall portion of a plasma chamber in which plasma may be generated. The first grid may adjoin the plasma. Therefore, a potential level difference between the first grid and the wall portion of the plasma chamber may be zero, and thus the plasma may be stable.Type: ApplicationFiled: January 8, 2008Publication date: July 10, 2008Inventors: Sung-Wook Hwang, Yung Hee Yvette Lee, Chul-Ho Shin, Jin-Seok Lee
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Patent number: 7365014Abstract: We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.Type: GrantFiled: January 30, 2004Date of Patent: April 29, 2008Assignee: Applied Materials, Inc.Inventors: Christopher Dennis Bencher, Melvin Warren Montgomery, Alexander Buxbaum, Yung-Hee Yvette Lee, Jian Ding, Gilad Almogy, Wendy H. Yeh
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Patent number: 7250309Abstract: Methods and apparatus for controlling the critical dimensions and monitoring the phase shift angles of photomasks. Critical dimensions measurement data before wafer processing and after wafer processing are collected by an integrated metrology tool to adjust the process recipe, to determine if the critical dimensions are in specification and to determine if additional etching is required. Phase shift angle and uniformity across substrate measurement after wafer processing are collected by an integrated metrology tool to determine if the phase shift angle and its uniformity are in specification. The real time process recipe adjustment and determination if additional etching is requires allow tightening of the process control. The phase shift angle and uniformity monitoring allows in-line screening of phase shift photomasks.Type: GrantFiled: January 9, 2004Date of Patent: July 31, 2007Assignee: Applied Materials, Inc.Inventors: Alfred W. Mak, Yung-Hee Yvette Lee, Cynthia B. Brooks, Melisa J. Buie, Turgut Sahin, Jian Ding
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Patent number: 6921723Abstract: Conventional methods of semiconductor fabrication and processing typically utilize three gas (e.g., HBr, Cl2 and O2) and four gas (e.g., HBr, Cl2, O2 and CF4) chemistries to perform gate etching in plasma process chambers. However, the silicon to resist selectivity achieved by these chemistries is limited to about 3:1. The present invention concerns a plasma source gas comprising SF6 and one or more fluorine-containing gases selected from C3F6, C4F8, C5F8, CH2F2, CHF3, and C4F6 (e.g., SF6 and C4F8), allowing the use of a two gas etch chemistry that provides enhanced silicon to photoresist selectivity in gate etching processes.Type: GrantFiled: April 23, 2002Date of Patent: July 26, 2005Assignee: Applied Materials, Inc.Inventors: Yung-Hee Yvette Lee, Shashank Deshmukh
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Patent number: 6486480Abstract: A plasma-formed ion-beam projection lithography (IPL) system eliminates the acceleration stage between the ion source and stencil mask of a conventional IPL system. Instead a much thicker mask is used as a beam forming or extraction electrode, positioned next to the plasma in the ion source. Thus the entire beam forming electrode or mask is illuminated uniformly with the source plasma. The extracted beam passes through an acceleration and reduction stage onto the resist coated wafer. Low energy ions, about 30 eV, pass through the mask, minimizing heating, scattering, and sputtering.Type: GrantFiled: April 9, 1999Date of Patent: November 26, 2002Assignee: The Regents of the University of CaliforniaInventors: Ka-Ngo Leung, Yung-Hee Yvette Lee, Vinh Ngo, Nastaran Zahir
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Patent number: 6124834Abstract: An antenna comprises a plurality of small diameter conductive wires disposed in a dielectric tube. The number and dimensions of the conductive wires is selected to improve the RF resistance of the antenna while also facilitating a reduction in thermal gradients that may create thermal stresses on the dielectric tube. The antenna may be mounted in a vacuum system using a low-stress antenna assembly that cushions and protects the dielectric tube from shock and mechanical vibration while also permitting convenient electrical and coolant connections to the antenna.Type: GrantFiled: April 3, 1998Date of Patent: September 26, 2000Assignee: The Regents of the University of CaliforniaInventors: Ka Ngo Leung, Yung-Hee Yvette Lee, Luke T. Perkins
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Patent number: 6094012Abstract: Multicusp ion sources are capable of producing ions with low axial energy spread which are necessary in applications such as ion projection lithography (IPL) and radioactive ion beam production. The addition of a radially extending magnetic filter consisting of a pair of permanent magnets to the multicusp source reduces the energy spread considerably due to the improvement in the uniformity of the axial plasma potential distribution in the discharge region. A coaxial multicusp ion source designed to further reduce the energy spread utilizes a cylindrical magnetic filter to achieve a more uniform axial plasma potential distribution. The coaxial magnetic filter divides the source chamber into an outer annular discharge region in which the plasma is produced and a coaxial inner ion extraction region into which the ions radially diffuse but from which ionizing electrons are excluded. The energy spread in the coaxial source has been measured to be 0.6 eV.Type: GrantFiled: November 6, 1998Date of Patent: July 25, 2000Assignee: The Regents of the University of CaliforniaInventors: Ka-Ngo Leung, Yung-Hee Yvette Lee
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Patent number: 5945677Abstract: A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.Type: GrantFiled: January 5, 1999Date of Patent: August 31, 1999Assignee: The Regents of the University of CaliforniaInventors: Ka-Ngo Leung, Richard A. Gough, Qing Ji, Yung-Hee Yvette Lee