Abstract: A photomask structure including a first layout pattern and a second layout pattern is provided. The second layout pattern is located on one side of the first layout pattern. The first layout pattern and the second layout pattern are separated from each other. The first layout pattern has a first edge and a second edge opposite to each other. The second layout pattern has a third edge and a fourth edge opposite to each other. The third edge of the second layout pattern is adjacent to the first edge of the first layout pattern. The second layout pattern includes a first extension portion exceeding an end of the first layout pattern. The first extension portion includes a first protruding portion protruding from the third edge of the second layout pattern. The first protruding portion exceeds the first edge of the first layout pattern.

Abstract: A method for analyzing gait is provided for a system including multiple accelerometers. The method includes: for each time point and each accelerometer, calculating a root mean square (RMS) value according to the accelerations sensed on sensing axes of the corresponding accelerometer; calculating a cross correlation coefficient according to the RMS values of a first accelerometer and a second accelerometer; calculating a first auto-correlation coefficient of the RMS values of the first accelerometer; calculating a second auto-correlation coefficient of the RMS values of the second accelerometer; and calculating a first gait index according to the cross correlation coefficient, the first auto-correlation coefficient, and the second auto-correlation coefficient.