Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a first substrate with a first surface and a second surface opposite to the first surface, a second substrate adjacent to the first surface of the first substrate, and an encapsulant encapsulating the first substrate and the second substrate. The first substrate defines a space. The second substrate covers the space. The second surface of the first substrate is exposed by the encapsulant. A surface of the encapsulant is coplanar with the second surface of the first substrate or protrudes beyond the second surface of the first substrate.

Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a first substrate with a first surface and a second surface opposite to the first surface, a second substrate adjacent to the first surface of the first substrate, and an encapsulant encapsulating the first substrate and the second substrate. The first substrate defines a space. The second substrate covers the space. The second surface of the first substrate is exposed by the encapsulant. A surface of the encapsulant is coplanar with the second surface of the first substrate or protrudes beyond the second surface of the first substrate.

Abstract: A semiconductor device package includes a redistribution layer structure, a lid, a sensing component and an encapsulant. The lid is disposed on the redistribution layer structure and defines a cavity together with the redistribution layer structure. The sensing component is disposed in the cavity. The encapsulant surrounds the lid.

Abstract: A semiconductor device package includes a redistribution layer structure, a lid, a sensing component and an encapsulant. The lid is disposed on the redistribution layer structure and defines a cavity together with the redistribution layer structure. The sensing component is disposed in the cavity. The encapsulant surrounds the lid.

Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a first substrate with a first surface and a second surface opposite to the first surface, a second substrate adjacent to the first surface of the first substrate, and an encapsulant encapsulating the first substrate and the second substrate. The first substrate defines a space. The second substrate covers the space. The second surface of the first substrate is exposed by the encapsulant. A surface of the encapsulant is coplanar with the second surface of the first substrate or protrudes beyond the second surface of the first substrate.

Abstract: A semiconductor device package includes a carrier, a first semiconductor device disposed on the carrier, a second semiconductor device disposed on the first semiconductor device, a conductive wire electrically connecting the first semiconductor device to the carrier, and an encapsulant encapsulating the first semiconductor device, the second semiconductor device and the conductive wire. The second semiconductor device defines a hole. The encapsulant exposes the hole. An apex of the conductive wire is lower than a surface of the second semiconductor device by a first distance (s). The apex of the conductive wire is spaced from the first surface of the encapsulant by a second distance (t). A first surface of the encapsulant is lower than a surface of the second semiconductor device by a third distance (D). The third distance is less than or equal to a difference between the first distance and the second distance.

Abstract: A semiconductor process includes: applying an encapsulation material on an upper surface of a first substrate to encapsulate a die and first conductive parts, wherein the encapsulation material is a B-stage adhesive; forming a plurality of openings on the encapsulation material to expose the first conductive parts; pressing a second substrate onto the encapsulation material to adhere a lower surface of the second substrate to the encapsulation material, wherein the second substrate includes second conductive parts, and each of the first conductive parts contacts a corresponding one of the second conductive parts; and heating to fuse the first conductive parts and the corresponding second conductive parts to form a plurality of interconnection elements and solidify the encapsulation material to form a C-stage adhesive.

Abstract: A semiconductor process includes: applying an encapsulation material on an upper surface of a first substrate to encapsulate a die and first conductive parts, wherein the encapsulation material is a B-stage adhesive; forming a plurality of openings on the encapsulation material to expose the first conductive parts; pressing a second substrate onto the encapsulation material to adhere a lower surface of the second substrate to the encapsulation material, wherein the second substrate includes second conductive parts, and each of the first conductive parts contacts a corresponding one of the second conductive parts; and heating to fuse the first conductive parts and the corresponding second conductive parts to form a plurality of interconnection elements and solidify the encapsulation material to form a C-stage adhesive.

Abstract: The present disclosure relates to a semiconductor package structure and semiconductor process. The semiconductor package includes a first substrate, a second substrate, a die, a plurality of interconnection elements and an encapsulation material. Each of the interconnection elements connects the first substrate and the second substrate. The encapsulation material encapsulates the interconnection elements. The encapsulation material defines a plurality of accommodation spaces to accommodate the interconnection elements, and the profile of each accommodation space is defined by the individual interconnection element, whereby the warpage behavior of the first substrate is in compliance with that of the second substrate during reflow.

Abstract: The present disclosure relates to a semiconductor package structure and semiconductor process. The semiconductor package includes a first substrate, a second substrate, a die, a plurality of interconnection elements and an encapsulation material. Each of the interconnection elements connects the first substrate and the second substrate. The encapsulation material encapsulates the interconnection elements. The encapsulation material defines a plurality of accommodation spaces to accommodate the interconnection elements, and the profile of each accommodation space is defined by the individual interconnection element, whereby the warpage behavior of the first substrate is in compliance with that of the second substrate during reflow.