Abstract: A polishing apparatus for double-sided polishing of semiconductor wafers including a first platen, a second platen, a wafer carrier, and a controller is disclosed. The controller is configured to perform operations including determining whether a batch of the semiconductor wafers is loaded on the wafer carrier for double-sided polishing and retrieving specification for the batch of semiconductor wafers. The operations include based on the retrieved specification, determining an amount of tuning required for one or more flatness control parameters, and based on the amount of tuning required for the one or more flatness control parameters, identifying, or generating a recipe to perform the double-sided polishing on the batch of the semiconductor wafers. The operations include storing statistical process control (SPC) feedback data in a database to perform one or more additional iterations of the double-sided polishing on the batch of the semiconductor wafers.

Abstract: A method for processing semiconductor wafers includes obtaining measurement data from a surface of a semiconductor wafer processed by a front-end process tool. The method includes determining a center plane of the wafer based on the measurement data, generating raw shape profiles, and generating ideal shape profiles. The method further includes generating Gapi profiles based on the raw shape profiles and the ideal shape profiles, and calculating a Gapi value of the semiconductor wafer based on the Gapi profiles. The generated Gapi profiles and/or the calculated Gapi value may be used to tune the front-end process tool and/or sort the semiconductor wafer for polishing. Systems include at least a front-end process tool, a flatness measurement tool, and a computing device.

Abstract: A method for processing semiconductor wafers includes obtaining measurement data of an edge profile of a semiconductor wafer processed by a front-end process tool. The method includes determining an edge profile center point based on the measurement data, generating a raw height profile, and generating an ideal edge profile. The method further includes generating a Gapi edge profile of the semiconductor wafer based on the raw height profile and the ideal edge profile and calculating a Gapi edge value of the semiconductor wafer based on the Gapi edge profile. The generated Gapi edge profile and/or the calculated Gapi edge value may be used to tune the front-end process tool and/or sort the semiconductor wafer for polishing. Systems include at least a front-end process tool, a flatness measurement tool, and a computing device.