Abstract: A conveyance arm device for conveying wafers. The conveyance arm device comprises a conducting seat, at least a tweezer, and at least a conducting path. The conducting seat controls and drives the conveying operation of the tweezer. The tweezer comprises a first end and a second end, and a first surface and a second surface between the first and the second ends. The first end of the tweezer is connected to the conducting seat. The conducting film is adhered to the second surface of the tweezer.

Abstract: A method for processing a poly defect is described. A substrate is provided, and a first oxide layer is formed on the substrate. A polysilicon layer is formed on the first oxide layer, and a poly defect is formed on the polysilicon layer surface simultaneous with polysilicon layer formation. A second oxide layer is formed conformal to the substrate, a portion of the second oxide layer and the poly defect are removed by polishing until a thin second oxide layer and a thin poly defect layer are formed. Finally, the thin second oxide layer is removed.