Abstract: A power control system of a rack heat-dissipation system, which receives output voltages of a rack power supply and a module power supply, includes a first control module and a second control module operating in parallel. The first control module includes a first switching unit, a first voltage converting unit and a first monitoring unit. The second control module includes a second switching unit, a second voltage converting unit and a second monitoring unit. The first monitoring unit is connected to the rack power supply, the module power supply, the first switching unit and the first voltage converting unit, and the second monitoring unit is connected to the rack power supply, the module power supply, the second switching unit and the second voltage converting unit. The heat dissipation system can be kept in the normal operation even if one of the control modules is failed.

Abstract: A semiconductor device includes an opening, a metal nitride layer, a bilayer metal layer and a conductive bulk layer. The opening is disposed in a first dielectric layer. The metal nitride layer is disposed in the opening. The bilayer metal layer is disposed on the metal nitride layer in the opening, where the bilayer metal layer includes a first metal layer and a second metal layer which is disposed on the first metal layer and has a greater metal concentration than that of the first metal layer. The conductive bulk layer is filled in the opening.

Abstract: A semiconductor device includes an opening, a metal nitride layer, a bilayer metal layer and a conductive bulk layer. The opening is disposed in a first dielectric layer. The metal nitride layer is disposed in the opening. The bilayer metal layer is disposed on the metal nitride layer in the opening, where the bilayer metal layer includes a first metal layer and a second metal layer which is disposed on the first metal layer and has a greater metal concentration than that of the first metal layer. The conductive bulk layer is filled in the opening.