Patents by Inventor Yung-hwan Son

Yung-hwan Son has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 9520405
    Abstract: A semiconductor device is provided. A channel layer is formed on a substrate. The channel layer is extended in a first direction substantially perpendicular to an upper surface of the substrate. A ground selection line is formed on a first region of the channel layer. A plurality of word lines is formed on a second region of the channel layer. A plurality of string selection lines is formed on a third region of the channel layer. The second region of the channel layer includes a first conductivity type dopant. The first, second and third regions of the channel layer are disposed along the first direction.
    Type: Grant
    Filed: October 2, 2014
    Date of Patent: December 13, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Do-hyun Lee, Jae-duk Lee, Young-woo Park, Yung-hwan Son
  • SEMICONDUCTOR DEVICE
    Publication number: 20150097222
    Abstract: A semiconductor device is provided. A channel layer is formed on a substrate. The channel layer is extended in a first direction substantially perpendicular to an upper surface of the substrate. A ground selection line is formed on a first region of the channel layer. A plurality of word lines is formed on a second region of the channel layer. A plurality of string selection lines is formed on a third region of the channel layer. The second region of the channel layer includes a first conductivity type dopant. The first, second and third regions of the channel layer are disposed along the first direction.
    Type: Application
    Filed: October 2, 2014
    Publication date: April 9, 2015
    Inventors: Do-hyun Lee, Jae-duk Lee, Young-woo Park, Yung-hwan Son