Abstract: It is described a method for spatially characterizing a device positioned within an object, e.g. a patient's body, under examination that e.g. allows a clinician to easily assess the deployment state and position of the device. The method comprises the steps of acquiring (26) a set of images of the device, reconstructing (28) a three-dimensional model of the device from the set of images, comparing (30) the model of the device with an ideal model of the device in a predetermined deployment state inside the object and displaying (36) the model of the device on a display unit. For optical indication deviation areas of the deployed device relative to an ideal model of the deployed device can be determined and color-coded depending on the strength of deviation.

Abstract: An active monolithic optical device for wavelength division multiplexing (WDM) incorporating diode laser arrays, an output coupling waveguide and a curved Rowland circle based grating to produce a plurality of individual laser beams at slightly different wavelengths is integrated in a common electro-optic material. The wavelength of each laser source is determined by the geometry of the array and the diffraction grating design. The output of all the channels can be collected into a concentrator or lens to be multiplexed in a single output. Applications include a WDM optical amplifier and WDM laser source.

Abstract: High density, simplified fabrication and the elimination of sidewalk leakage effects are achieved by the implementation of a self-aligned ion-implantation step during the fabrication of the MNOS transistor wherein, after the formation of the gate electrode of the transistor, low energy ions are implanted within the nitride layer of the MNOS transistor in the regions of the nitride layer adjacent to the gate electrode.

Abstract: An electrooptic device for controlling the intensity of a monochromatic light beam comprises a first transparent element such as a triangular prism or hemicylindrical prism having a planar surface. A thin layer of a material such as a metal is in contact with the planar surface of the transparent element and a semiconductor material is adjacent to the metal layer. A voltage source provides a potential difference between the metal layer and the semiconductor material to alter the charge density in the semiconductor material to affect the degree of coupling between the light beam entering the device and surface plasmon waves generated within the device to correspondingly control the intensity of the light beam exiting the device.

Abstract: A sensing system for a nonvolatile memory transistor array employs reference transistors which are substantially identical to the memory transistors within the array and employs means to program the threshold voltage levels of the reference transistors to a lower level than that of the memory transistors within the array such that the changes in the electrical characteristics of both the memory and the reference transistors are proportional over time, the system thereby being rendered self-tracking.

Abstract: An electrooptic device for controlling the intensity of a monochromatic light beam comprises a transparent element having opposed planar surfaces operable to reflect a collimated light beam alternately from the two surfaces. A plurality of semiconductor structures contact one surface of the device at regions where the collimated light beam reflects from that surface. Each semiconductor structure includes a thin layer of a material such as a metal in contact with the planar surface of the transparent element and a semiconductor material adjacent to the metal layer. A voltage source provides a potential between the metal layer and the semiconductor material of each structure to separately alter the charge density in the semiconductor material of each structure to affect the degree of coupling between the light beam entering the device and surface plasmon waves generated within each structure. The device is operable as a signal mixer or an optical logic switching device.