Abstract: Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X]3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification. The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.

Abstract: Provided is a method for preparing lead iodide, which controls the crystal form of lead iodide through temperature, including: dissolving a lead compound in a first acid solution and adding an iodine compound to form a reaction solution including the first lead iodide; and heating the reaction solution to a temperature of 60° C. or more and standing at a constant temperature, to obtain the second lead iodide, wherein a peak intensity of the (003) crystal plane of the second lead iodide is greater than or equal to a peak intensity of the (110) crystal plane. Provided is also a method for preparing the perovskite film.

Abstract: Provided is a method for testing a perovskite precursor solution, including: taking a perovskite precursor solution containing a plurality of dispersed perovskite colloids as a sample to perform liquid analysis, thereby obtaining an analysis information; and determining whether the perovskite precursor solution is a good product based on obtained analysis information from the liquid analysis, wherein the analysis information is at least one selected from the group consisting of element content of the colloid, element distribution, colloid size, and colloid appearance, thereby a feasible and effective testing method is defined through the correlation between the perovskite precursor colloid and the perovskite.

Abstract: Provided is a perovskite film including crystal grains with a crystalline structure of [A][B][X]3.n[C], wherein [A], [B], [X], [C] and n are as defined in the specification. The present disclosure further provides a precursor composition of perovskite film, method for producing of perovskite film, and semiconductor element including such films, as described above. With the optimal lattice arrangement, the perovskite film shows the effects of small surface roughness, and the semiconductor element thereof can thus achieve high efficiency and stability even with large area of film formation, thereby indeed having prospect of the application.

Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n?1)M1nX(3n+1)??formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.

Abstract: Provided are a perovskite film and a manufacturing method thereof. The method includes the following steps. A perovskite precursor material is coated in a linear direction on a substrate with a temperature between 100° C. and 200° C., wherein a concentration of the perovskite precursor material is between 0.05 M and 1.5 M. An infrared light irradiation is performed on the perovskite precursor material to cure the perovskite precursor material to form a thin film including a compound represented by formula (1). The perovskite film has a single 2D phase structure or has a structure in which a 3D phase structure is mixed with a single 2D phase structure. (RNH3)2MA(n?1)M1nX(3n+1)??formula (1), wherein the definitions of R, MA, M1, X, and n are as defined above.

Abstract: Provided are a method for forming a perovskite layer and a method for forming a structure comprising a perovskite layer. The method for forming a perovskite layer includes the following steps: coating a perovskite precursor material on a substrate; and performing a heating treatment to the substrate; and irradiating the perovskite precursor material with infrared light.

Abstract: The present invention provides a method of laminating a film for a dye-sensitized cell. First, a composite film is taken by a robotic arm, in which the composite film includes a release layer, a protective layer and a hot glue layer between the release layer and the protective layer, and the release layer is removed by the robotic arm. Then, the hot glue layer is precisely attached to a substrate by a target positioning step. Next, the protective layer is removed by the robotic arm.

Abstract: The present invention provides a method of laminating a film for a dye-sensitized cell. First, a composite film is taken by a robotic arm, in which the composite film includes a release layer, a protective layer and a hot glue layer between the release layer and the protective layer, and the release layer is removed by the robotic arm. Then, the hot glue layer is precisely attached to a substrate by a target positioning step. Next, the protective layer is removed by the robotic arm.

Abstract: A dye adsorption method and a dye adsorption apparatus is provided in this disclosure. The dye adsorption method includes a dye adsorption step. In the dye adsorption step, a dye is injected into and flowed through a space between two electrodes of a solar cell facing each other to obtain at least one dye-adsorbed electrode.

Abstract: A dye adsorption method and a dye adsorption apparatus is provided in this disclosure. The dye adsorption method includes a dye adsorption step. In the dye adsorption step, a dye is injected into and flowed through a space between two electrodes of a solar cell facing each other to obtain at least one dye-adsorbed electrode.

Abstract: A dye adsorption method and a dye adsorption apparatus is provided in this disclosure. The dye adsorption method includes a dye adsorption step. In the dye adsorption step, a dye is injected into and flowed through a space between two electrodes of a solar cell facing each other to obtain at least one dye-adsorbed electrode.

Abstract: A dye adsorption method and a dye adsorption apparatus is provided in this disclosure. The dye adsorption method includes a dye adsorption step. In the dye adsorption step, a dye is injected into and flowed through a space between two electrodes of a solar cell facing each other to obtain at least one dye-adsorbed electrode.

Abstract: Disclosed is a porphyrin photosensitive dye, having the chemical formula: Each of L1 and L2 is independently R1 is C5-20 linear/branched alkyl group. R2 is C0-20 linear/branched alkyl group. R4 is C1-20 linear/branched alkyl group. Each of R3 and R5 is independently C1-20 linear/branched alkyl group or C1-20 linear/branched alkoxy group. Y1 is C3-20 cycloalkyl group. Each of a and b is independently an integer of 0 to 5. D is Each of R6 to R11 is independently C1-10 alkyl group. X1 is N, O, S, or Se. Each of c, d, and e is independently an integer of 0 to 5. A is Each of Z1 and Z2 is independently hydrogen, alkali metal, or quaternary ammonium salt —N(R12)4. R12 is C1-10 alkyl group. X2 is N, O, S, or Se.

Abstract: Disclosed is a porphyrin photosensitive dye, having the chemical formula: Each of L1 and L2 is independently R1 is C5-20 linear/branched alkyl group. R2 is C0-20 linear/branched alkyl group. R4 is C1-20 linear/branched alkyl group. Each of R3 and R5 is independently C1-20 linear/branched i alkyl group or C1-20 linear/branched alkoxy group. Y1 is C3-20 cycloalkyl group. Each of a and b is independently an integer of 0 to 5. D is Each of R6 to R11 is independently C1-10 alkyl group. X1 is N, O, S, or Se. Each of c, d, and e is independently an integer of 0 to 5. A is Each of Z1 and Z2 is independently hydrogen, alkali metal, or quaternary ammonium salt —N(R12)4. R12 is C1-10 alkyl group. X2 is N, O, S, or Se.

Abstract: Organic dyes and photoelectric conversion devices are provided. The Organic dye has the structure represented by formula (I), wherein, n is an integral of 2-11; the plurality of X is independent and elected from the group consisting of and combinations thereof; R, R1, and R2 comprise hydrogen, halogen, C1-18 alkyl group, C1-18 alkoxy group, C3-18 heteroalkyl group, C3-20 aryl group, C3-20 heteroaryl group, C3-20 cycloaliphatic group or C3-20 cycloalkyl group, or R1 is connected to R2 to form a ring having 5-14 members; R3 comprise hydrogen, halogen, nitro group, amino group, C1-18 alkyl group, C1-18 alkoxy group, C1-18 sulfanyl group, C3-18 heteroalkyl group, C3-20 aryl group, C3-20 heteroaryl group, C3-20 cycloaliphatic group or C3-20 cycloalkyl group; and Z is hydrogen, alkali metal, or quaternary ammonium salt.

Abstract: A method for fabricating a dye-sensitized solar cell is provided. The dye-sensitized solar cell includes a photo electrode including (a) mixing a TiO2 powder, a Zn-containing compound and an alkaline aqueous solution to form a mixture and performing a thermal process on the mixture to form a Zn-doped TiO2 powder; (b) mixing a binder solution with the Zn-doped TiO2 powder to form a paste; (c) coating the paste on a first electrode, and the paste is sintered to form a Zn-doped TiO2 porous layer, wherein the Zn-doped TiO2 porous layer and the first electrode construct a photo electrode; (d) disposing a second electrode opposite to the photo electrode after a dye is absorbed by the Zn-doped TiO2 porous layer; and (e) disposing an electrolyte between the photo electrode and the second electrode.

Abstract: Disclosed is a dye sensitized solar cell (DSSC) including a substrate having a dye sensitized layer thereon, an opposite substrate having a catalyst layer thereon, a spacer disposed between the substrate and the opposite substrate to define a space, and an electrolyte in the space. The spacer is formed by reacting a photo curable glue including a main oligomer, a photo initiator, a photo curing accelerator agent, a softener, an adhesion enhancer, and a chemical resistance additive.

Abstract: Disclosed is a dye, having a chemical formula: wherein each R1 is independently selected from hydrogen, —(CxH2x+1), —(CyH2y)—S—(CxH2x+1), or —(CyH2y)—N(CxH2x+1)2; Ar1 is wherein each R2 is independently selected from —(CxH2x+1), —(CxH2x)—S—(CxH2x+1), or (CxH2x)—N(CxH2x+1)2; Ar2 is wherein each R3 is independently selected from hydrogen, —(CxH2x+1), —(CyH2y)—S—(CxH2x+1), or —(CyH2y)—N(CxH2x+1)2; X is sulfur, oxygen, selenium, or N—R4, and R4 is —(CxH2x+1); m is in integer of 1 to 4; x is an integer of 1 to 20; and y is an integer of 0 to 20. The dye can be applied to a photoelectric conversion device.

Abstract: Disclosed is a dye, having a chemical formula: wherein each R1 is independently selected from hydrogen, —(CxH2x+1), —(CyH2y)—S—(CxH2x+1), or —(CyH2y)—N(CxH2x+1)2; Ar1 is wherein each R2 is independently selected from —(CxH2x+1), —(CxH2x)—S—(CxH2x+1), or (CxH2x)—N(CxH2x+1)2; Ar2 is wherein each R3 is independently selected from hydrogen, —(CxH2x+1), —(CyH2y)—S—(CxH2x+1), or —(CyH2y)—N(CxH2x+1)2; X is sulfur, oxygen, selenium, or N—R4, and R4 is —(CxH2x+1); m is in integer of 1 to 4; x is an integer of 1 to 20; and y is an integer of 0 to 20. The dye can be applied to a photoelectric conversion device.