Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device structure includes a semiconductor substrate and an interconnection structure over the semiconductor substrate. The semiconductor device structure also includes a first conductive pillar over the interconnection structure. The first conductive pillar has a first protruding portion extending towards the semiconductor substrate from a lower surface of the first conductive pillar. The semiconductor device structure further includes a second conductive pillar over the interconnection structure. The second conductive pillar has a second protruding portion extending towards the semiconductor substrate from a lower surface of the second conductive pillar. The first conductive pillar is closer to a center point of the semiconductor substrate than the second conductive pillar. A bottom of the second protruding portion is wider than a bottom of the first protruding portion.

Abstract: A smart wearable device has a signal calibration function executed by a signal calibration method and applied to a finger, a limb and/or a neck of a user. The smart wearable device includes at least one physiological signal detector, at least one pressure detector and an operation processor. The at least one physiological signal detector is adapted to abut against a detection area of the user for detecting a physiological signal. The at least one pressure detector is disposed around the at least one physiological signal detector and adapted to detect a pressure value of the detection area. The operation processor is electrically connected with the at least one physiological signal detector and the at least one pressure detector. The operation processor is adapted to optimize the physiological signal when the pressure value exceeds a predefined pressure threshold.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes an interconnection structure over a semiconductor substrate and a conductive pillar over the interconnection structure. The conductive pillar has a protruding portion extending towards the semiconductor substrate from a lower surface of the conductive pillar. The semiconductor device structure also includes an upper conductive via between the conductive pillar and the interconnection structure and a lower conductive via between the upper conductive via and the interconnection structure. The lower conductive via is electrically connected to the conductive pillar through the upper conductive via. The conductive pillar extends across opposite sidewalls of the upper conductive via and opposite sidewalls of the lower conductive via. A top view of an entirety of the second conductive via is separated from a top view of an entirety of the protruding portion.

Abstract: A clock structure enabling highly uniform distribution of illuminating light includes a case frame, a dial, a movement having a shaft extended through the dial, and a set of hands connected to the movement shaft. The clock structure further includes a round acrylic plate located below the dial and having an annular blind groove formed around a peripheral area, a sheet of light uniforming paper attached to an upper surface of the acrylic plate, a silk-screen printing ink layer formed on a lower surface of the acrylic plate, a flexible circuit board mounted in the blind groove, and LED lights equally spaced on the circuit board to emit light toward a radially inner surface of the blind groove. The silk-screen printing ink layer diffusely reflects the light and the light uniforming paper enables uniform distribution of the light over the dial to make the clock structure a high-end product.