Abstract: A plating system and a method thereof are disclosed. The plating system performs a N-stage plating drilling filling process in which a M-th stage plating drilling filling process with a M-th current density is performed on a hole of a substrate for a M-th plating time to form a M-th plating layer on the to-be-plated layer, wherein N is a positive integer equal to or greater than 3, and M is a positive integer positive integer in a range of 1 to N. Therefore, the technical effect of providing a higher drilling filling rate than conventional plating filling technology under a condition that a total thickness of plating layers is fixed can be achieved.

Abstract: A control method is provided and used to place a target object on a test platform in a cabin of a testing device, to sense the temperature of the target object by a temperature response structure, and then to receive temperature signals of the temperature response structure by a controller, where the controller can regulate the pressure inside the cabin to control the air pressure of the cabin, so that the target object can still maintain good heat dissipation under high power consumption.

Abstract: A testing equipment is provided, in which at least one testing module is disposed on a machine, and the testing module includes a circuit board, a testing carrier disposed on the circuit board and carrying a target object, and a processor disposed on the circuit board and electrically connected to the testing carrier, such that the testing module can operate and process a target information of the target object by itself via the processor, without connecting to an external computer to operate and process the target information of the target object, so as to quickly obtain a detecting information of the target object.

Abstract: A control method is provided and used to place a target object on a test platform in a cabin of a testing device, to sense the temperature of the target object by a temperature response structure, and then to receive temperature signals of the temperature response structure by a controller, where the controller can regulate the pressure inside the cabin to control the air pressure of the cabin, so that the target object can still maintain good heat dissipation under high power consumption.

Abstract: A sealing bag which could separate an inside of the sealing bag from the outside includes a bag body, wherein a first zipper, a second zipper, and an exhaust device are disposed on the bag body. The bag body has a storage space and an opening. The first zipper is for closing the opening of the bag body. The second zipper is for dividing the storage space into a first sub-space located between the first zipper and the second zipper and a second sub-space. The exhaust device is disposed between the first zipper and the second zipper for vacuuming air in the first sub-space. Therefore, a force generated by the atmospheric pressure and exerted on the bag body is greater than the force generated by the expansion of remain air in the second sub-space, so that the second zipper is always in a closed status.

Abstract: A fan module and a hat with a fan module are disclosed. The fan module includes a case, a fan, and an air guide tube. The case includes a connecting portion, wherein the case is detachably engaged with a visor of a hat. The case has a receiving space and an air outlet, wherein the air outlet communicates with the receiving space. The fan is rotatably provided in the receiving space of the case. An airflow is generated when the fan rotates, wherein the airflow is exhausted out of the case through the air outlet. The air guide tube is connected to the case, and guides the airflow to a space between the head of a wearer and the main body. Whereby, the hat with the fan module could provide not only sunscreen protection, but also a cooling effect.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region defined thereon; forming a trench in the substrate; performing a first ion implantation process to form a first doped region having a first conductive type in the substrate adjacent to the trench; forming a gate electrode in the trench; and performing a second ion implantation process to form a second doped region having a second conductive type in the substrate above the gate electrode.

Abstract: A semiconductor memory device and a manufacturing method thereof are provided in the present invention. Storage node contacts are formed on a semiconductor substrate including active regions. Each storage node contact contacts at least one of the active regions. Each storage node contact has a recessed top surface. A first distance exists between a topmost point and a lowest point of the recessed top surface in a vertical direction. A second distance exists between the topmost point and a bottom surface of the storage node contact in the vertical direction. A ratio of the first distance to the second distance ranges from 30% to 70%. The contact resistance between the storage node contact and other conductive structures formed on the storage node contact may be reduced by the storage node contact having the recessed top surface, and the electrical operation condition of the semiconductor memory device may be improved accordingly.

Abstract: A semiconductor device and a manufacturing method thereof include providing a substrate including an active region of a conductivity type and an isolation structure, in which the isolation structure surrounds the active region; forming a word line trench on the substrate, the word line trench intersecting the active region; and forming two doped regions in the active region at two sides of the word line trench respectively, in which each doped region and a bottom surface of the word line trench are located in a same level, and each doped region includes dopants of the conductivity type or an intrinsic semiconductor dopants.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a memory region defined thereon; forming a trench in the substrate; performing a first ion implantation process to form a first doped region having a first conductive type in the substrate adjacent to the trench; forming a gate electrode in the trench; and performing a second ion implantation process to form a second doped region having a second conductive type in the substrate above the gate electrode.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a trench in a substrate; performing an ion implantation process to implant ions into the substrate underneath the trench; performing an in-situ steam generation (ISSG) process to form a gate dielectric layer in the trench; forming a gate electrode on the gate dielectric layer; and forming a doped region in the substrate adjacent to two sides of the gate electrode.

Abstract: A fan module and a hat with a fan module are disclosed. The fan module includes a case, a fan, and an air guide tube. The case includes a connecting portion, wherein the case is detachably engaged with a visor of a hat. The case has a receiving space and an air outlet, wherein the air outlet communicates with the receiving space. The fan is rotatably provided in the receiving space of the case. An airflow is generated when the fan rotates, wherein the airflow is exhausted out of the case through the air outlet. The air guide tube is connected to the case, and guides the airflow to a space between the head of a wearer and the main body. Whereby, the hat with the fan module could provide not only sunscreen protection, but also a cooling effect.

Abstract: An industrial-design-resources operating platform locates at a server end for connecting buyers and designers at client ends via the internet. The industrial-design-resources operating platform comprises a primary storage module for storing at least one first industrial design draft sent by the designer; a resource depository module for depositing an industrial design work which is an evaluated classification generated by having the first industrial design draft evaluated by at least one evaluator; a pricing module for giving a price to the industrial design work according to the evaluated classification; a displaying module for showing the priced industrial design work to a plurality of said buyers; and a purchasing module for accepting purchase fees paid by the buyers.