Patents by Inventor Yung-Si YU

Yung-Si YU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200251577
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a transistor over a substrate. The semiconductor device structure includes a dielectric structure over the substrate and covering the transistor. The semiconductor device structure includes a contact structure passing through the dielectric structure and electrically connected to the transistor. The contact structure includes a contact layer, a first barrier layer, and a second barrier layer, the first barrier layer surrounds the contact layer, the second barrier layer surrounds a first upper portion of the first barrier layer, a first lower portion of the first barrier layer is in direct contact with the dielectric structure, and a thickness of the first lower portion increases toward the substrate.
    Type: Application
    Filed: April 20, 2020
    Publication date: August 6, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Yang WU, Shiu-Ko JANGJIAN, Ting-Chun WANG, Yung-Si YU
  • Patent number: 10629708
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric structure over a transistor. The method includes forming a first recess in the dielectric structure. The method includes forming a first barrier layer over a first inner wall of the first recess. The first barrier layer has a first opening over a first portion of the dielectric structure, and the first barrier layer close to a first bottom surface of the first recess is thicker than the first barrier layer close to a top surface of the dielectric structure. The method includes removing the first portion through the first opening to form a second recess in the dielectric structure. The method includes forming a second barrier layer over a second inner wall of the second recess. The method includes forming a contact layer in the first opening and the second opening.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: April 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Yang Wu, Shiu-Ko Jangjian, Ting-Chun Wang, Yung-Si Yu
  • Publication number: 20200043858
    Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.
    Type: Application
    Filed: July 31, 2018
    Publication date: February 6, 2020
    Inventors: Chia-Yang Wu, Shiu-Ko JangJian, Ting-Chun Wang, Yung-Si Yu
  • Publication number: 20190148522
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric structure over a transistor. The method includes forming a first recess in the dielectric structure. The method includes forming a first barrier layer over a first inner wall of the first recess. The first barrier layer has a first opening over a first portion of the dielectric structure, and the first barrier layer close to a first bottom surface of the first recess is thicker than the first barrier layer close to a top surface of the dielectric structure. The method includes removing the first portion through the first opening to form a second recess in the dielectric structure. The method includes forming a second barrier layer over a second inner wall of the second recess. The method includes forming a contact layer in the first opening and the second opening.
    Type: Application
    Filed: October 30, 2018
    Publication date: May 16, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Yang WU, Shiu-Ko JANGJIAN, Ting-Chun WANG, Yung-Si YU