Patents by Inventor Yung-Sung Yen

Yung-Sung Yen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10818509
    Abstract: A method includes forming a material layer over a substrate, forming a first hard mask (HM) layer over the material layer, forming a first trench, along a first direction, in the first HM layer. The method also includes forming first spacers along sidewalls of the first trench, forming a second trench in the first HM layer parallel to the first trench, by using the first spacers to guard the first trench. The method also includes etching the material layer through the first trench and the second trench, removing the first HM layer and the first spacers, forming a second HM layer over the material layer, forming a third trench in the second HM layer. The third trench extends along a second direction that is perpendicular to the first direction and overlaps with the first trench. The method also includes etching the material layer through the third trench.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: October 27, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yung-Sung Yen, Chung-Ju Lee, Chun-Kuang Chen, Chia-Tien Wu, Ta-Ching Yu, Kuei-Shun Chen, Ru-Gun Liu, Shau-Lin Shue, Tsai-Sheng Gau, Yung-Hsu Wu
  • Publication number: 20200335340
    Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.
    Type: Application
    Filed: July 6, 2020
    Publication date: October 22, 2020
    Inventors: Shih-Chun HUANG, Chiu-Hsiang CHEN, Ya-Wen YEH, Yu-Tien SHEN, Po-Chin CHANG, Chien Wen LAI, Wei-Liang LIN, Ya Hui CHANG, Yung-Sung YEN, Li-Te LIN, Pinyen LIN, Ru-Gun LIU, Chin-Hsiang LIN
  • Patent number: 10790155
    Abstract: In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: September 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ru-Gun Liu, Chih-Ming Lai, Wei-Liang Lin, Yung-Sung Yen, Ken-Hsien Hsieh, Chin-Hsiang Lin
  • Patent number: 10763113
    Abstract: A technique for patterning a workpiece such as an integrated circuit workpiece is provided. In an exemplary embodiment, the method includes receiving a dataset specifying a plurality features to be formed on the workpiece. A first patterning of a hard mask of the workpiece is performed based on a first set of features of the plurality of features, and a first spacer material is deposited on a sidewall of the patterned hard mask. A second patterning is performed based on a second set of features, and a second spacer material is deposited on a sidewall of the first spacer material. A third patterning is performed based on a third set of features. A portion of the workpiece is selectively processed using a pattern defined by a remainder of at least one of the patterned hard mask layer, the first spacer material, or the second spacer material.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: September 1, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yung-Sung Yen, Chun-Kuang Chen, Ko-Bin Kao, Ken-Hsien Hsieh, Ru-Gun Liu
  • Patent number: 10748767
    Abstract: Various patterning methods involved with manufacturing semiconductor device structures are disclosed herein. A method for forming a semiconductor device structure (for example, a conductive line) includes forming a first hard mask layer and a second hard mask layer over a dielectric layer. The first hard mask layer has a first opening, and the second hard mask layer has a first trench connected to the first opening. A filling layer is formed in the first opening, where the filling layer has a second opening and a third opening. The first hard mask layer and the dielectric layer are removed through the second opening and the third opening to form a second trench and a third trench in the dielectric layer. The first hard mask layer, the second hard mask layer, and the filling layer can be removed. A conductive layer is formed in the second trench and the third trench.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: August 18, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yung-Sung Yen, Ken-Hsien Hsieh, Ru-Gun Liu
  • Patent number: 10707081
    Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: July 7, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Chun Huang, Chiu-Hsiang Chen, Ya-Wen Yeh, Yu-Tien Shen, Po-Chin Chang, Chien Wen Lai, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Li-Te Lin, Pinyen Lin, Ru-Gun Liu, Chin-Hsiang Lin
  • Publication number: 20200103766
    Abstract: A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.
    Type: Application
    Filed: December 20, 2018
    Publication date: April 2, 2020
    Inventors: Chih-Jie LEE, Shih-Chun HUANG, Shih-Ming CHANG, Ken-Hsien HSIEH, Yung-Sung YEN, Ru-Gun LIU
  • Publication number: 20200105528
    Abstract: A method of defining a pattern-includes forming a plurality of cut shapes and a first plurality of openings within a first layer of a multi-layer hard mask to expose first portions of the second layer. A plurality of etch stops is formed by implanting an etch rate modifying species in a portion of the plurality of cut shapes. The first layer is directionally etched at the plurality of cut shapes such that the plurality of etch stops remain. A spacer layer is formed on the first layer and the first portions. A second plurality of openings is formed within the spacer layer to expose second portions of the second layer. The spacer layer is directionally etched to remove the spacer layer from sidewalls of the plurality of etch stops. Portions of the second layer exposed through the first plurality of openings and the second plurality of openings are etched.
    Type: Application
    Filed: July 3, 2019
    Publication date: April 2, 2020
    Inventors: Chih-Min HSIAO, Chien Wen LAI, Shih-Chun HUANG, Yung-Sung YEN, Chih-Ming LAI, Ru-Gun LIU
  • Publication number: 20200066648
    Abstract: A method for fabricating a semiconductor device is provided. The method includes obtaining a pattern density of an integrated circuit (IC) design layout; adjusting a density of an alignment mark pattern of the IC design layout according to the pattern density; and patterning a material layer according to the IC design layout after adjusting the density of the alignment mark pattern.
    Type: Application
    Filed: August 27, 2018
    Publication date: February 27, 2020
    Inventors: Chiu-Hsiang CHEN, Shih-Chun HUANG, Yung-Sung YEN, Ru-Gun LIU
  • Publication number: 20200013630
    Abstract: Methods are disclosed herein for patterning integrated circuit devices, such as fin-like field effect transistor devices. An exemplary method includes forming a material layer that includes an array of fin features, and performing a fin cut process to remove a subset of the fin features. The fin cut process includes exposing the subset of fin features using a cut pattern and removing the exposed subset of the fin features. The cut pattern partially exposes at least one fin feature of the subset of fin features. In implementations where the fin cut process is a fin cut first process, the material layer is a mandrel layer and the fin features are mandrels. In implementations where the fin cut process is a fin cut last process, the material layer is a substrate (or material layer thereof), and the fin features are fins defined in the substrate (or material layer thereof).
    Type: Application
    Filed: September 16, 2019
    Publication date: January 9, 2020
    Inventors: Chin-Yuan Tseng, Wei-Liang Lin, Hsin-Chih Chen, Shi Ning Ju, Ken-Hsien Hsieh, Yung-Sung Yen, Ru-Gun Liu
  • Publication number: 20200006078
    Abstract: In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.
    Type: Application
    Filed: January 4, 2019
    Publication date: January 2, 2020
    Inventors: Ru-Gun LIU, Chih-Ming LAI, Wei-Liang LIN, Yung-Sung YEN, Ken-Hsien HSIEH, Chin-Hsiang LIN
  • Publication number: 20200006085
    Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.
    Type: Application
    Filed: April 12, 2019
    Publication date: January 2, 2020
    Inventors: Ya-Wen YEH, Yu-Tien SHEN, Shih-Chun HUANG, Po-Chin CHANG, Wei-Liang LIN, Yung-Sung YEN, Wei-Hao WU, Li-Te LIN, Pinyen LIN, Ru-Gun LIU
  • Publication number: 20200006121
    Abstract: In accordance with an aspect of the present disclosure, in a pattern forming method for a semiconductor device, a first opening is formed in an underlying layer disposed over a substrate. The first opening is expanded in a first axis by directional etching to form a first groove in the underlying layer. A resist pattern is formed over the underlying layer. The resist pattern includes a second opening only partially overlapping the first groove. The underlying layer is patterned by using the resist pattern as an etching mask to form a second groove.
    Type: Application
    Filed: April 3, 2019
    Publication date: January 2, 2020
    Inventors: Ru-Gun LIU, Chin-Hsiang LIN, Chih-Ming LAI, Wei-Liang LIN, Yung-Sung YEN
  • Publication number: 20190378712
    Abstract: A technique for patterning a workpiece such as an integrated circuit workpiece is provided. In an exemplary embodiment, the method includes receiving a dataset specifying a plurality features to be formed on the workpiece. A first patterning of a hard mask of the workpiece is performed based on a first set of features of the plurality of features, and a first spacer material is deposited on a sidewall of the patterned hard mask. A second patterning is performed based on a second set of features, and a second spacer material is deposited on a sidewall of the first spacer material. A third patterning is performed based on a third set of features. A portion of the workpiece is selectively processed using a pattern defined by a remainder of at least one of the patterned hard mask layer, the first spacer material, or the second spacer material.
    Type: Application
    Filed: August 15, 2019
    Publication date: December 12, 2019
    Inventors: Yung-Sung YEN, Chun-Kuang CHEN, Ko-Bin KAO, Ken-Hsien HSIEH, Ru-Gun LIU
  • Patent number: 10488766
    Abstract: A lithography system is provided. The lithography system includes a mask and an optical module. The optical module is configured to optically form an invisible pellicle over the mask to protect the mask from contaminant particles. As a solid pellicle used in the prior arts is omitted, the critical dimension (CD) error from the boarder effect due to reflection of some light by the solid pellicle and the exposure radiation energy consumption caused by the solid pellicle can be avoided.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: November 26, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chiu-Hsiang Chen, Shih-Ming Chang, Chih-Jie Lee, Han-Wei Wu, Yung-Sung Yen, Ru-Gun Liu
  • Publication number: 20190341254
    Abstract: A method of fabricating a semiconductor device includes forming a hard mask layer over a substrate. A multi-layer resist is formed over the hard mask layer. The multi-layer resist is etched to form a plurality of openings in the multi-layer resist to expose a portion of the hard mask layer. Ion are directionally provided at an angle to the multi-layer resist to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In one embodiment, the multi-layer resist is directionally etched by directing etch ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In another embodiment, the multi-layer resist is directionally implanted by directing implant ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer.
    Type: Application
    Filed: July 15, 2019
    Publication date: November 7, 2019
    Inventors: Shih-Chun HUANG, Chin-Hsiang LIN, Chien-Wen LAI, Ru-Gun LIU, Wei-Liang LIN, Ya Hui CHANG, Yung-Sung YEN, Yu-Tien SHEN, Ya-Wen YEH
  • Patent number: 10418252
    Abstract: Methods are disclosed herein for patterning integrated circuit devices, such as fin-like field effect transistor devices. An exemplary method includes forming a material layer that includes an array of fin features, and performing a fin cut process to remove a subset of the fin features. The fin cut process includes exposing the subset of fin features using a cut pattern and removing the exposed subset of the fin features. The cut pattern partially exposes at least one fin feature of the subset of fin features. In implementations where the fin cut process is a fin cut first process, the material layer is a mandrel layer and the fin features are mandrels. In implementations where the fin cut process is a fin cut last process, the material layer is a substrate (or material layer thereof), and the fin features are fins defined in the substrate (or material layer thereof).
    Type: Grant
    Filed: December 16, 2016
    Date of Patent: September 17, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO, LTD.
    Inventors: Chin-Yuan Tseng, Wei-Liang Lin, Hsin-Chih Chen, Shi Ning Ju, Ken-Hsien Hsieh, Yung-Sung Yen, Ru-Gun Liu
  • Patent number: 10388523
    Abstract: A technique for patterning a workpiece such as an integrated circuit workpiece is provided. In an exemplary embodiment, the method includes receiving a dataset specifying a plurality features to be formed on the workpiece. A first patterning of a hard mask of the workpiece is performed based on a first set of features of the plurality of features, and a first spacer material is deposited on a sidewall of the patterned hard mask. A second patterning is performed based on a second set of features, and a second spacer material is deposited on a sidewall of the first spacer material. A third patterning is performed based on a third set of features. A portion of the workpiece is selectively processed using a pattern defined by a remainder of at least one of the patterned hard mask layer, the first spacer material, or the second spacer material.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: August 20, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yung-Sung Yen, Chun-Kuang Chen, Ko-Bin Kao, Ken-Hsien Hsieh, Ru-Gun Liu
  • Publication number: 20190244901
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a plurality of gate structures extending in a first direction over a substrate between a plurality of source/drain regions. A lower power rail is formed extending in a second direction perpendicular to the first direction. A first connection pin is formed to be electrically coupled to one of the plurality of source/drain regions and to the lower power rail. The first connection pin is formed according to a cut mask having cut regions that define opposing ends of the first connection pin. An upper power rail is formed directly over the lower power rail and extending in the second direction. The upper power rail is electrically coupled to the first connection pin.
    Type: Application
    Filed: April 12, 2019
    Publication date: August 8, 2019
    Inventors: Shih-Wei Peng, Chih-Ming Lai, Chun-Kuang Chen, Chih-Liang Chen, Charles Chew-Yuen Young, Jiann-Tyng Tzeng, Kam-Tou Sio, Ru-Gun Liu, Yung-Sung Yen
  • Patent number: 10354874
    Abstract: A method of fabricating a semiconductor device includes forming a hard mask layer over a substrate. A multi-layer resist is formed over the hard mask layer. The multi-layer resist is etched to form a plurality of openings in the multi-layer resist to expose a portion of the hard mask layer. Ion are directionally provided at an angle to the multi-layer resist to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In one embodiment, the multi-layer resist is directionally etched by directing etch ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In another embodiment, the multi-layer resist is directionally implanted by directing implant ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: July 16, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Chun Huang, Chin-Hsiang Lin, Chien-Wen Lai, Ru-Gun Liu, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Yu-Tien Shen, Ya-Wen Yeh