Patents by Inventor Yung-Szu Su

Yung-Szu Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10217892
    Abstract: This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1?x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.
    Type: Grant
    Filed: July 26, 2016
    Date of Patent: February 26, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Rong-Ren Lee, Yung-Szu Su, Shih-Chang Lee
  • Publication number: 20160336478
    Abstract: This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1?x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.
    Type: Application
    Filed: July 26, 2016
    Publication date: November 17, 2016
    Inventors: Rong-Ren LEE, Yung-Szu SU, Shih-Chang LEE
  • Publication number: 20140134783
    Abstract: This application is related to a method of manufacturing a solar cell device comprising providing a substrate comprising Ge or GaAs; forming a first tunnel junction on the substrate, wherein the first tunnel junction comprises a first n-type layer comprising InGaP:Te, and a first alloy layer comprising AlxGa(1-x)As and having a lattice constant; adding a material into the first alloy layer to change the lattice constant; and forming a first p-n junction on the first tunnel junction.
    Type: Application
    Filed: January 22, 2014
    Publication date: May 15, 2014
    Applicant: EPISTAR CORPORATION
    Inventors: Rong-Ren LEE, Yung-Szu SU, Shih-Chang LEE
  • Publication number: 20100258171
    Abstract: A solar photovoltaic device is provided and includes a solar cell body, a window layer on the solar cell body, and a current collection layer on the window layer. The current collection layer includes a patterned structure, and a portion of the window layer is exposed by the patterned structure.
    Type: Application
    Filed: April 9, 2010
    Publication date: October 14, 2010
    Inventors: Yung-Szu Su, Tsung-Hsien Liu, Wu-Tsung Lo, Shih-Chang Lee, Yu-Chih Yang
  • Publication number: 20100175746
    Abstract: This application is related to a tandem solar cell device including a substrate, a first tunnel junction formed on the substrate, and a first p-n junction formed on the first tunnel junction wherein the first tunnel junction including a heavily doped n-type layer and an alloy layer wherein the alloy layer having an element with atomic number larger than that of Gallium.
    Type: Application
    Filed: January 12, 2010
    Publication date: July 15, 2010
    Inventors: Rong-Ren LEE, Yung-Szu Su, Shih-Chang Lee