Abstract: A semiconductor structure and a method of fabricating therefor are disclosed. A second contact pad (500) is arranged lateral to a first contact pad (420) in an interconnect structure (400). As a result, during fabrication of the interconnect structure (400), the first contact pad (420) will not be present alone in a large bland area, due to the presence of the second contact pad (500). Thus, a pattern feature for the first contact pad (420) will not be over-resolved, increasing formation accuracy of the first contact pad (420) and thus guaranteeing good electrical transmission performance of the resulting interconnect structure (400).

Abstract: A cleaning cloth includes a single piece of a polyvinyl alcohol (PVA)-based sheet that has a working surface formed with a plurality of protrusions protruding therefrom. In one preferred embodiment, any two adjacent ones of the protrusions have an interval ranging from 1.0 to 10.0 mm therebetween. In another preferred embodiment, each of the protrusions has a height ranging from 0.1 to 1.0 mm relative to the working surface.