Patents by Inventor Yung-Tang NIEN

Yung-Tang NIEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Yttrium aluminum garnet phosphor, method for preparing the same, and light-emitting diode containing the same
    Patent number: 9085733
    Abstract: The present invention relates to yttrium aluminum garnet phosphor, a method of preparing the same and a light-emitting diode containing the same. The yttrium aluminum garnet phosphor of the present invention is represented by the following formula (I): (Y3-aMa)Al5-bSibO12??(I) wherein, 0.01?a?0.2, 0<b?1.2, and M is at least one selected from the group consisting of Ce, Dy, Gd, Eu, Tb, La, Pr, Nd, and Sm.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: July 21, 2015
    Assignee: National Cheng Kung University
    Inventors: In-Gann Chen, Yung-Tang Nien, Heueh-Jung Lu, Chia-Wei Ma
  • Light Emitting Diode Device with Enhanced Heat Dissipation, and the Method of Preparing the Same
    Publication number: 20140021501
    Abstract: The present invention provides a light emitting diode device with enhanced heat dissipation, and the method of preparing the same. By forming the heat dissipating holes and trenches on the phosphor layer, and filling the heat dissipating holes and trenches on the phosphor layer with thermal conducting materials, the service life of the light emitting diode can be longer by reducing the thermal effect and improving the heat dissipation.
    Type: Application
    Filed: July 19, 2013
    Publication date: January 23, 2014
    Inventors: In-Gann CHEN, Yung-Tang NIEN, Chia-Wei MA