Abstract: A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.

Abstract: A CMP process of high selectivity is described. A substrate having a first material and a second material thereon is provided. A polishing pad that has multiple first grooves and multiple second grooves crossing the first grooves thereon is provided. The polishing pad and a high-selectivity slurry are then used together to polish the substrate, wherein the high-selectivity slurry has a higher selectivity to the first material than to the second material.

Abstract: A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.

Abstract: A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.

Abstract: A chemical-mechanical polishing method for polishing a copper oxide layer and a copper layer. The copper oxide layer above the copper layer is first polished using an aqueous solution having a high concentration of polishing particles/chelating agent. The copper layer is then polished using a polishing slurry having a low concentration of polishing particles/chelating agent or the polishing slurry free of polishing particles/chelating agent. Alternatively, the copper oxide layer is polished using a mixture of the aqueous solution and the polishing slurry. After the copper oxide layer is removed, the copper layer is polished using the polishing slurry alone.

Abstract: A new designed carrier head for chemical mechanical polishing is disclosed. The carrier head has a non-rigid incision ring having a downwardly-projecting non-rigid incision and surrounding a support plate of the carrier head instead of conventional incision or rip disposed in a conventional support plate. The carrier head also has a flexible membrane extending around the edges of the support plate, wherein the edge of the flexible membrane is at predetermined distance from the incision.

Abstract: A new designed carrier head for chemical mechanical polishing is disclosed. The carrier head has a non-rigid incision ring having a downwardly-projecting non-rigid incision and surrounding a support plate of the carrier head instead of conventional incision or rip disposed in a conventional support plate. The carrier head also has a flexible membrane extending around the edges of the support plate, wherein the edge of the flexible membrane is at predetermined distance from the incision.

Abstract: The present invention provides a method for forming a dual-damascene interconnect structure and removing hard-mask layers thereon. First, a dielectric layer is formed on a substrate. Then, a first hard-mask layer and a second hard-mask layer are sequentially formed on the dielectric layer. An etching selectivity of the second hard-mask layer is different to an etching selectivity of the first hard-mask layer. Next, a first via hole is formed in the dielectric layer and exposes a portion of the substrate. Following, a second via hole is formed in the dielectric layer, wherein the second via hole is above and connects with the first via hole. Then, a conductive layer is formed on the substrate to fill the first via hole and the second via hole. Next, the conductive layer is planarized and stopped on the second hard-mask layer. Last, the second hard-mask layer is removed.

Abstract: A method for surface treatment protecting a metallic semiconductor structure comprises providing a semiconductor structure with a metallic layer thereon. A protective layer on the metallic layer of the semiconductor structure and the protective layer comprises an metallic oxide layer. The present invention is particularly applied on the electrochemical copper surface of the semiconductor structure and a copper corrosion inhibitor BTA is used for formation of the protective layer. In particular, the present invention is applied on the steps of both pre and post-CMP.

Abstract: The present invention provides a method for stabilizing low dielectric constant materials in a semiconductor structure. The method comprises providing the semiconductor structure and thereon spinning-on a dielectric layer. After a curing step, the dielectric layer is treated with an aqueous solution containing, for example, ammonium hydroxide. With the aqueous solution, a passivated film formed on the surface of the dielectric layer, such as a polymer layer, can protect the dielectric layer from adsorption of moisture or solvents.

Abstract: A method of removing contaminants from a silicon wafer after chemical-mechanical polishing (CMP). After a copper chemical-mechanical polishing and a subsequent barrier chemical-mechanical polishing operation, an aqueous solution of ozone in de-ionized water is applied to clean the silicon wafer so that contaminants on the wafer are removed. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after copper and barrier CMP and then the wafer is cleaned using a chemical solution or de-ionized water. Alternatively, an ozone/de-ionized water buffer-polishing process is conducted after both copper-CMP and barrier-CMP and then the wafer is cleaned using a chemical solution or de-ionized water.

Abstract: A method of fabricating a damascene structure comprises of forming a dielectric layer on a substrate, and an opening is formed on the dielectric layer to expose a portion of the substrate. The dielectric layer is thus defined. A barrier layer is formed conformal to the profile of the opening and a metal layer fills the opening. Two chemical mechanical polishing processes are carried out sequentially to polish the metal layer and the barrier layer, wherein a first slurry is used to polish the metal layer and a second slurry that contains oxidant is used to polish the barrier layer. A damascene structure is thus formed.

Abstract: A method for removing carbon-rich particles adhered on a copper surface, especially on a copper surface of a copper/low k dielectric dual damascene structure is provided. A barrier layer and a barrier-CMP stopping layer are formed between the copper layer and the low k dielectric layer of the dual damascene structure. After a Cu-CMP process and a barrier CMP process, a chemical buffing polishing process using an acidic aqueous solution under a downward force of about 0.5 to 3 psi is performed to remove carbon-rich particles adhered on the exposed copper surface, which is due to the low k dielectric layer having at least 90% carbon element being exposed and then polished during the Cu-CMP process and the barrier CMP process, resulting from a dishing phenomenon of the copper layer occurring during the two CMP processes. Alternately, a first chemical buffing polishing process is followed after the Cu-CMP process, and a second chemical buffing polishing process is followed after the barrier CMP process.

Abstract: The present invention provides a method for stabilizing low dielectric constant materials in a semiconductor structure. The method comprises providing the semiconductor device and thereon spinning-on a dielectric layer. After curing step, the dielectric layer is treated with an aqueous solution, for example, containing ammonium hydroxide. With the aqueous solution, a passivated film formed on the suface of the dielectric layer, such as a polymer layer, can protect the dielectric layer from adsorption of moisture or solvents.

Abstract: A method of fabricating a damascene structure comprises of forming a dielectric layer on a substrate, and an opening is formed on the dielectric layer to expose a portion of the substrate. The dielectric layer is thus defined. A barrier layer is formed conformal to the profile of the opening and a metal layer fills the opening. Two chemical mechanical polishing processes are carried out sequentially to polish the metal layer and the barrier layer, wherein a first slurry is used to polish the metal layer and a second slurry that contains oxidant is used to polish the barrier layer. A damascene structure is thus formed.

Abstract: The present invention provides a method to form a copper interconnect and avoid a dishing phenomenon on the copper interconnect in the manufacturing process which will cause the metal line thinning and high resistance. By using a cap layer selectively positioned over the dual damascene structure, the method can balance the difference of polishing rate between the copper and the surrounding material. Such we can get a plane surface of interconnect in a chemical mechanical polishing process.

Abstract: This invention relates to a method for improving curvature of the polished surface by chemical mechanical polishing comprising a polishing table, a polishing pad, a polishing head and a slurry exhaust system. The polishing head comprises a revolving spindle and the slurry exhaust system comprises a slurry outlet. The method for improving curve rate of the polished surface by chemical mechanical polishing is in order to make the slurry distributing on the polishing pad non-uniformly in controlling to control removing rate on each point of the polishing surface by the concentration of the slurry. This method will improve the defects in non-smooth on the wafer-polishing surface to make the wafer-polishing surface in full flatness after polishing.

Abstract: A method for removing carbon-rich particles adhered on the exposed copper surface of a copper/low k dielectric dual damascene structure is provided. A barrier layer and a barrier-CMP stopping layer are formed between the copper layer and the low k dielectric layer of the dual damascene structure. After a Cu-CMP process and a barrier CMP process are completed, a chemical buffing polishing process using a basic solution under a downward force of about 0.5 to 3 psi is performed to remove carbon-rich particles adhered on the exposed copper surface due to the low k dielectric having at least 90% carbon element being exposed and then polished during the Cu-CMP process and the barrier CMP process, which results from a dishing phenomenon of the copper layer occurring during the two CMP processes. Finally, a post chemical mechanical polishing cleaning process is performed to remove away dirt left on the exposed copper surface.

Abstract: A method for removing carbon-rich particles adhered on a copper surface, especially on a copper surface of a copper/low k dielectric dual damascene structure is provided. A barrier layer and a barrier-CMP stopping layer are formed between the copper layer and the low k dielectric layer of the dual damascene structure. After a Cu-CMP process and a barrier CMP process, a chemical buffing polishing process using an acidic aqueous solution under a downward force of about 0.5 to 3 psi is performed to remove carbon-rich particles adhered on the exposed copper surface, which is due to the low k dielectric layer having at least 90% carbon element being exposed and then polished during the Cu-CMP process and the barrier CMP process, resulting from a dishing phenomenon of the copper layer occurring during the two CMP processes. Alternately, a first chemical buffing polishing process is followed after the Cu-CMP process, and a second chemical buffing polishing process is followed after the barrier CMP process.

Abstract: A chemical-mechanical polishing method for polishing a copper oxide layer and a copper layer. The copper oxide layer above the copper layer is first polished using an aqueous solution having a high concentration of polishing particles/chelating agent. The copper layer is then polished using a polishing slurry having a low concentration of polishing particles/chelating agent or the polishing slurry free of polishing particles/chelating agent. Alternatively, the copper oxide layer is polished using a mixture of the aqueous solution and the polishing slurry. After the copper oxide layer is removed, the copper layer is polished using the polishing slurry alone.