Abstract: A semiconductor device and method of manufacture are provided. In embodiments a first liner is deposited to line a recess between a first semiconductor fin and a second semiconductor fin, the first liner comprising a first material. The first liner is annealed to transform the first material to a second material. A second liner is deposited to line the recess, the second liner comprising a third material. The second liner is annealed to transform the third material to a fourth material.

Abstract: The present invention discloses a method for fabricating concentration-gradient high-frequency ferromagnetic film, wherein the primary material target is arranged exactly below the sputter-coated substrate to achieve the on-substrate concentration uniformity of the components coming from the primary material target; at least one doping target is arranged at a position deviating from the center of the substrate to create a doping concentration gradient on the substrate along a direction, and a stress gradient is thus created on the substrate along the direction of concentration variation. Thus, the as-deposited ferromagnetic material fabricated at ambient temperature can possess the uniaxial anisotropy that a high-frequency ferromagnetic material needs.