Abstract: A fault detection method, includes the following steps. A target sequence is received, the target sequence includes several data. A first moving average operation is performed on the target sequence to establish a first moving average sequence. A second moving average operation is performed on the target sequence to establish a second moving average sequence. A difference operation between the first moving average sequence and the second moving average sequence is performed to obtain a difference sequence, the difference sequence includes several difference values. An upper limit value is set. When one of the difference values is greater than the upper limit value, the target sequence is determines as abnormal.

Abstract: A phase-change memory (PCM) cell is provided to include a first electrode, a second electrode, and a phase-change feature disposed between the first electrode and the second electrode. The phase-change feature is configured to change its data state based on a write operation performed on the PCM cell. The write operation includes a reset stage and a set stage. In the reset stage, a plurality of reset current pulses are applied to the PCM cell, and the reset current pulses have increasing current amplitudes. In the set stage, a plurality of set current pulses are applied to the PCM cell, and the set current pulses exhibit an increasing trend in current amplitude. The current amplitudes of the set current pulses are smaller than those of the reset current pulses.

Abstract: The present disclosure provides an electronic wearable device. The electronic wearable device includes a first module having a first contact and a second module having a second contact. The first contact is configured to keep electrical connection with the second contact in moving with respect to each other during a wearing period.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: An injection-molded container with surface fringe and a method for manufacturing the same comprises a container and a pattern substrate, wherein the method comprises: firstly, printing and hot pressing the surface of the pattern substrate, to form the pattern of fringe; then, pressing the patterned pattern substrate, so that the pattern substrate has a shape as desired for the container; further, putting the pattern substrate into a mold, so that the pattern substrate has a slightly arc-shaped bottom; and injecting and adhering a material used for the container onto the pattern substrate directly, wherein the arc-shaped bottom of the pattern substrate uniformly disperses the impact of the injected material used for the container to form the shape of the container.

Abstract: The invention is to provide a lens adapted to an image capturing apparatus. In particular, the lens according to the invention is capable of reducing the divergence of radiation-based signals emitted from the interior of the image capturing apparatus.