Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

Abstract: A memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a word line, a bit line, an active region and a bit line contact structure. The word line is disposed in the substrate, and extends along a first direction. The bit line is disposed over the substrate, and extends along a second direction. The active region is disposed in the substrate, and extends along a third direction. The bit line contact structure is disposed between the active region and the bit line. A top view pattern of the bit line contact structure has a long axis. An angle between the extending direction of this long axis and the third direction is less than an angle between the extending direction of this long axis and the first direction, and is less than an angle between the extending direction of this long axis and the second direction.

Abstract: A mask assembly including a first mask and a second mask is provided. The first mask includes a plurality of first main features parallel to each other, a plurality of first sub-resolution assistant features (SRAFs) and a plurality of second SRAFs. The second SRAFs are separately disposed at one side of the first main features. The first SRAFs are separately disposed between the first main features and the second SRAFs. An extension direction of the first main features is parallel to an extension direction of the second SRAFs. The second mask includes a plurality of second main features parallel to each other. When the first mask and the second mask are placed at a predetermined position above a negative-type development photoresist layer for performing exposure respectively, the second main features intersect with the first main features and the second main features overlap with the first SRAFs.

Abstract: A mask assembly including a first mask and a second mask is provided. The first mask includes a plurality of first main features parallel to each other, a plurality of first sub-resolution assistant features (SRAFs) and a plurality of second SRAFs. The second SRAFs are separately disposed at one side of the first main features. The first SRAFs are separately disposed between the first main features and the second SRAFs. An extension direction of the first main features is parallel to an extension direction of the second SRAFs. The second mask includes a plurality of second main features parallel to each other. When the first mask and the second mask are placed at a predetermined position above a negative-type development photoresist layer for performing exposure respectively, the second main features intersect with the first main features and the second main features overlap with the first SRAFs.

Abstract: Double-exposure mask structure and photolithography method for performing a photolithography process on a substrate are provided. The substrate has a central region and a margin region. A double-exposure mask structure includes a plurality of parallel and spaced first masks corresponding to the central region, a plurality of parallel and spaced second masks corresponding to the central region, and a plurality of auxiliary masks. The second masks intersect with the first masks to form a plurality of overlapping regions. The auxiliary masks are not in contact with one another, and correspond to the Second masks to assist the overlapping regions neighboring to the auxiliary masks to have sufficient depth of focus for photolithography. With the auxiliary masks, the overlapping regions in the central region and neighboring to the margin region can have preferred photolithography and etching effect.

Abstract: Double-exposure mask structure and photolithography. method for performing a photolithography process on a substrate are provided. The substrate has a central region and a margin region. A double-exposure mask structure includes a plurality of parallel and spaced first masks corresponding to the central region, a plurality of parallel and spaced second masks corresponding to the central region, and a plurality of auxiliary masks. The second masks intersect the first masks to form a plurality of overlapping regions. The auxiliary masks are not in contact with one another, and correspond to the Second masks to assist the overlapping regions neighboring to the auxiliary masks to have sufficient depth of focus for photolithography. With the auxiliary masks, the overlapping regions in the central region and neighboring to the margin region can have preferred photolithography and etching effect.