Patents by Inventor Yung-Yen Shieh

Yung-Yen Shieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating bipolar complementary metal oxide semiconductor (BiCMOS) device structure
    Patent number: 6602747
    Abstract: Within both a method for fabricating a bipolar transistor device and a method for fabricating a BiCMOS device there is: (1) formed contacting a base contact region a polysilicon base contact of a second polarity; and (2) formed contacting an emitter contact region a polysilicon emitter contact of a first polarity. Within the methods, there is then implanted into the polysilicon base contact a dose of a dopant of the second polarity while masking the polysilicon emitter contact. The methods provide for enhanced performance of the bipolar transistor device and the BiCMOS device.
    Type: Grant
    Filed: June 26, 2002
    Date of Patent: August 5, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Fu-Chih Yang, Guan-Jie Shen, Yung-Yen Shieh