Patents by Inventor Yung-Yu Chen

Yung-Yu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060256076
    Abstract: An interactive system with movement sensing capability, comprising: an inertial sensing unit disposed on a movable object so as to sense a movement of the movable object and generate a corresponding signal; a control unit connected to the inertial sensing unit so as to transmit the signal; and a multi-media unit receiving the signal so as to display a corresponding first image and a second image interacted with the first image.
    Type: Application
    Filed: July 27, 2005
    Publication date: November 16, 2006
    Inventors: Shun-Nan Liou, Ming-Jye Tsai, Yu-Hung Cheng, Ying-Ko Lu, Hsiang-Yu Huang, Yung-Yu Chen
  • Publication number: 20060172445
    Abstract: A method for determining properties or a thin film includes the steps of: providing a piezoelectric substrate; providing a slanted finger interdigital transducer unit that includes a transmitter port and a receiver port on the piezoelectric substrate; forming the thin film on the piezoelectric substrate between the transmitter port and the receiver port; applying an input signal to the transmitter port; and measuring a phase difference, which corresponds to the input signal, from the receiver port. Accordingly, properties of the thin film are determined based on the measured phase difference. An apparatus for realizing the method is also disclosed.
    Type: Application
    Filed: July 29, 2005
    Publication date: August 3, 2006
    Inventors: Yung-Yu Chen, Tsung-Tsong Wu, Guo-Tsai Huang, Pei-Zen Chang
  • Publication number: 20060134927
    Abstract: The present invention relates to a method for forming an ultra thin oxide layer by using an ozonated water, which comprises the steps of dissolving an ozone-containing gas in deionized water to form an ozonated water, and immersing a silicon wafer in the ozonated water to from an ultra thin oxide layer on the wafer. The method according to the present invention can substitute for the conventional high temperature process for growing an ultra thin oxide layer and form an ultra thin oxide layer in high density and high uniformity by taking the advantages of time-saving, energy-saving but without conducting at an elevated temperature.
    Type: Application
    Filed: December 19, 2005
    Publication date: June 22, 2006
    Inventors: Yung-Yu Chen, Kon-Tsu Kin, Chiou-Mei Chen, Jen-Chung Lou