Abstract: A semiconductor structure includes a substrate, a first transistor disposed over the substrate and including a first channel, a first interfacial layer over the first channel, a first gate dielectric layer over the first interfacial layer, and a first gate electrode layer over the first gate dielectric layer, and a second transistor disposed over the substrate and including a second channel, a second interfacial layer over the second channel, a second gate dielectric layer over the second interfacial layer, and a second gate electrode layer over the second gate dielectric layer. The first gate dielectric layer includes a first dipole material composition having a first maximum concentration at a half-thickness line of the first gate dielectric layer. The second gate dielectric layer includes a second dipole material composition having a second maximum concentration at a half-thickness line of the second gate dielectric layer and greater than the first maximum concentration.

Abstract: A method for manufacturing copper wires on a substrate for a flat panel display device is disclosed. The method comprises following steps: providing a substrate; forming a seed layer on the surface; forming a patterned photoresist on the surface of the seed layer to expose a part of the seed layer; and plating a copper layer on the exposed part of the seed layer. As the copper layer is plated, an electrolyte solution comprises a sulfur-containing compound is used. The angle between the surface of the copper layer and the contact surface of the seed layer is greater than 0 degree and less than 90 degree. Through the method illustrated above, the film step-coverage in the following process can be improved, the generated voids in device can be reduced, the manufacturing steps can be simplified, and the complicated etching process can be avoided.

Abstract: A method for manufacturing copper wires on a substrate for a flat panel display device is disclosed. The method comprises following steps: providing a substrate; forming a seed layer on the surface; forming a patterned photoresist on the surface of the seed layer to expose a part of the seed layer; and plating a copper layer on the exposed part of the seed layer. As the copper layer is plated, an electrolyte solution comprises a sulfur-containing compound is used. The angle between the surface of the copper layer and the contact surface of the seed layer is greater than 0 degree and less than 90 degree. Through the method illustrated above, the film step-coverage in the following process can be improved, the generated voids in device can be reduced, the manufacturing steps can be simplified, and the complicated etching process can be avoided.

Abstract: A polymer electrolyte for use in lithium batteries is disclosed. It contains: (a) a poly(vinyl chloride-co-vinyl acetate), or PVCAC, which is a copolymer containing 5 to 25 mol % of a vinyl chloride monomer, and 75 to 95 mol % of a vinyl acetate monomer; (b) a lithium salt; and (c) an organic solvent mixture. The organic solvent mixture contains at least one component selected from the group consisting of EC and PC and a high-boiling-point organic solvent. Preferably, the amount of the PVCAC is about 16-40 mol % of the polymer electrolyte, lithium about 3-12 mol %, and the organic solvent mixture about 48-81 mol %, when the polymer electrolyte was freshly prepared. Preferrably, the high-boiling-point is DMF or NMP. Within the organic solvent mixture, if DMF is used, it should preferably be about 20-60 mol % of the total organic solvent mixture. If NMP is used, it should preferably be about 10-40 mol % of the total organic solvent mixture.

Abstract: A process of directly plating onto a nonconductive substrate is disclosed. The process comprises the steps of:1) conditioning: modifying a surface of the nonconductive substrate with selected organic hydrocarbons or polymers to enhance its property of adsorbing catalysts;2) catalyzing: immersing the conditioned substrate into a catalyst colloid-containing solution or a catalyst complex-containing solution to let the catalyst be adsorbed onto the substrate;3) accelerating: reducing the catalyst with a suitable acid or basic solution (adapted to the catalyst colloid), or with a reducing agent (adapted to the catalyst complex) to reduce the catalyst being adsorbed onto the substrate;4) enhancing: immersing the substrate after accelerating step into an enhancing agent containing a compound with two ligands;5) electroplating: proceeding with a plating process.