Abstract: A semiconductor device and method for fabricating a semiconductor device includes etch selectivity tuning to enlarge epitaxy process windows. Through modification of etching processes and careful selection of materials, improvements in semiconductor device yield and performance can be delivered. Etch selectivity is controlled by using dilute gas, using assistive etch chemicals, controlling a magnitude of bias power used in the etching process, and controlling an amount of passivation gas used in the etching process, among other approaches. A recess is formed in a dummy fin in a region of the semiconductor where epitaxial growth occurs to further enlarge the epitaxy process window.

Abstract: A smart factory system for being set up between a smart factory and a backend-system provider is disclosed. The smart factory system includes: a factory installation, being installed in the smart factory; a plurality of sensors, being in connection with the factory installation; a smart machine box, being signally connected to each of the sensors; a computing and storing apparatus, being set up at premises of the backend-system provider; and a query-making apparatus. With the most cost-intensive functions like computing and storing set up and maintained by the backend-system provider, a smart factory can be easily started and run by locally setting up and maintaining sensors and smart machine boxes while remotely subscribing the functions maintained by the backend-system provider as services with payment. The system significantly reduces the costs for stating and running a smart factory, thereby encouraging transformation into or establishment of smart factories.

Abstract: A semiconductor device includes plurality of fin structures extending in first direction on semiconductor substrate. Fin structure's lower portion is embedded in first insulating layer. First gate electrode and second gate electrode structures extend in second direction substantially perpendicular to first direction over of fin structures and first insulating layer. The first and second gate electrode structures are spaced apart and extend along line in same direction. First and second insulating sidewall spacers are arranged on opposing sides of first and second gate electrode structures. Each of first and second insulating sidewall spacers contiguously extend along second direction. A second insulating layer is in region between first and second gate electrode structures. The second insulating layer separates first and second gate electrode structures. A third insulating layer is in region between first and second gate electrode structures.

Abstract: A semiconductor device and method for fabricating a semiconductor device includes etch selectivity tuning to enlarge epitaxy process windows. Through modification of etching processes and careful selection of materials, improvements in semiconductor device yield and performance can be delivered. Etch selectivity is controlled by using dilute gas, using assistive etch chemicals, controlling a magnitude of bias power used in the etching process, and controlling an amount of passivation gas used in the etching process, among other approaches. A recess is formed in a dummy fin in a region of the semiconductor where epitaxial growth occurs to further enlarge the epitaxy process window.

Abstract: A display apparatus including a display panel, a first light source module, and a second light source module is disclosed. The display panel has a display surface and a back surface away from the display surface. The first light source module is disposed on a side of one of the display surface and the back surface of the display panel, and overlaps the display surface. The second light source module is disposed on a side of the other one of the display surface and the back surface of the display panel, and overlaps the display surface.

Abstract: The present invention provides an acupuncture point simulation device and a method of using the same in an education training and evaluation examination system. The method comprises the steps of: at least one pressure sensor being electrically connected to a message transceiver module; the module being electrically connected to a first and second message transceiver units; the second unit providing an acupuncture point message to the first unit; a user applying a force to the outer layer of the pressure sensor corresponding to the message, the sensor transmitting a message to the module which sends the message or other message converted by the message; the first unit receiving the message and outputting a first message; and the second unit receiving the first message, performing calculation and comparison, and outputting a second message to the first unit for user identification or reference.

Abstract: A semiconductor device includes plurality of fin structures extending in first direction on semiconductor substrate. Fin structure's lower portion is embedded in first insulating layer. First gate electrode and second gate electrode structures extend in second direction substantially perpendicular to first direction over of fin structures and first insulating layer. The first and second gate electrode structures are spaced apart and extend along line in same direction. First and second insulating sidewall spacers are arranged on opposing sides of first and second gate electrode structures. Each of first and second insulating sidewall spacers contiguously extend along second direction. A second insulating layer is in region between first and second gate electrode structures. The second insulating layer separates first and second gate electrode structures. A third insulating layer is in region between first and second gate electrode structures.

Abstract: A display apparatus including a display panel, a first light source module, and a second light source module is disclosed. The display panel has a display surface and a back surface away from the display surface. The first light source module is disposed on a side of one of the display surface and the back surface of the display panel, and overlaps the display surface. The second light source module is disposed on a side of the other one of the display surface and the back surface of the display panel, and overlaps the display surface.

Abstract: A method includes forming a first protruding semiconductor fin and a dummy fin protruding higher than top surfaces of isolation regions. The first protruding semiconductor fin is parallel to the dummy fin, forming a gate stack on a first portion of the first protruding semiconductor fin and a second portion of the dummy fin. The method further includes recessing a third portion of the first protruding semiconductor fin to form a recess, recessing an fourth portion of the dummy fin to reduce a height of the fourth portion of the dummy fin, and forming an epitaxy semiconductor region in the recess. The epitaxy semiconductor region is grown toward the dummy fin.

Abstract: A method includes forming a first protruding semiconductor fin and a dummy fin protruding higher than top surfaces of isolation regions. The first protruding semiconductor fin is parallel to the dummy fin, forming a gate stack on a first portion of the first protruding semiconductor fin and a second portion of the dummy fin. The method further includes recessing a third portion of the first protruding semiconductor fin to form a recess, recessing an fourth portion of the dummy fin to reduce a height of the fourth portion of the dummy fin, and forming an epitaxy semiconductor region in the recess. The epitaxy semiconductor region is grown toward the dummy fin.

Abstract: A semiconductor device includes plurality of fin structures extending in first direction on semiconductor substrate. Fin structure's lower portion is embedded in first insulating layer. First gate electrode and second gate electrode structures extend in second direction substantially perpendicular to first direction over of fin structures and first insulating layer. The first and second gate electrode structures are spaced apart and extend along line in same direction. First and second insulating sidewall spacers are arranged on opposing sides of first and second gate electrode structures. Each of first and second insulating sidewall spacers contiguously extend along second direction. A second insulating layer is in region between first and second gate electrode structures. The second insulating layer separates first and second gate electrode structures. A third insulating layer is in region between first and second gate electrode structures.

Abstract: A semiconductor device and method for fabricating a semiconductor device includes etch selectivity tuning to enlarge epitaxy process windows. Through modification of etching processes and careful selection of materials, improvements in semiconductor device yield and performance can be delivered. Etch selectivity is controlled by using dilute gas, using assistive etch chemicals, controlling a magnitude of bias power used in the etching process, and controlling an amount of passivation gas used in the etching process, among other approaches. A recess is formed in a dummy fin in a region of the semiconductor where epitaxial growth occurs to further enlarge the epitaxy process window.

Abstract: A semiconductor device includes plurality of fin structures extending in first direction on semiconductor substrate. Fin structure's lower portion is embedded in first insulating layer. First gate electrode and second gate electrode structures extend in second direction substantially perpendicular to first direction over of fin structures and first insulating layer. The first and second gate electrode structures are spaced apart and extend along line in same direction. First and second insulating sidewall spacers are arranged on opposing sides of first and second gate electrode structures. Each of first and second insulating sidewall spacers contiguously extend along second direction. A second insulating layer is in region between first and second gate electrode structures. The second insulating layer separates first and second gate electrode structures. A third insulating layer is in region between first and second gate electrode structures.

Abstract: Disclosed is a fast chilling method for improving beef tenderness, including the following steps: step 1, sample pretreatment: taking beef longissimus dorsi muscle after slaughter, removing surface fat and connective tissue, and vacuum packaging; step 2, rapid chilling: rapidly transferring the pre-treated sample completed in step 1 to a chilling equipment for chilling to a sample temperature of ?3 degrees Celsius (° C.), where the chilling is completed within 5 hours (h) after slaughter; step 3, chilling and aging at super-chilled temperature: transferring the samples rapidly chilled in step 2 to a chilled warehouse, and continuing to chilling and aging until 24 h after slaughter; and step 4, chilling storage and aging: cutting the sample equally into 2.5 centimeters (cm) thickness 24 h after slaughter, and then completing a vacuum skin packaging and refrigerating for aging.

Abstract: The present invention provides methods and compositions for treating advanced stage non-small cell lung cancer by cyclohexenone compounds.

Abstract: Disclosed is a fast chilling method for improving beef tenderness, including the following steps: step 1, sample pretreatment: taking beef longissimus dorsi muscle after slaughter, removing surface fat and connective tissue, and vacuum packaging; step 2, rapid chilling: rapidly transferring the pre-treated sample completed in step 1 to a chilling equipment for chilling to a sample temperature of ?3 degrees Celsius (° C.), where the chilling is completed within 5 hours (h) after slaughter; step 3, chilling and aging at super-chilled temperature: transferring the samples rapidly chilled in step 2 to a chilled warehouse, and continuing to chilling and aging until 24 h after slaughter; and step 4, chilling storage and aging: cutting the sample equally into 2.5 centimeters (cm) thickness 24 h after slaughter, and then completing a vacuum skin packaging and refrigerating for aging.

Abstract: A nasogastric tube contains: a body, a plug, and a pH (potential of hydrogen) sensor. The body includes a feeding portion, a discharging portion, and a conduit. The feeding portion has a cap, and the discharging portion has multiple through orifices. The plug includes a connecting portion and a protruded portion. The protruded portion has a smooth surface. The pH sensor is injection molded to integrate into the plug, and the pH sensor includes a pH sensing element and two antennas. The pH sensing element is made of conducting material which is configured to produce different voltage response with a pH ion concentration in gastric juice. The pH value of the gastric juice measured by the pH sensing element is wirelessly send by the two antennas to a reader, and the pH value of the gastric juice measured is displayed on the reader.

Abstract: A semiconductor device and method for fabricating a semiconductor device includes etch selectivity tuning to enlarge epitaxy process windows. Through modification of etching processes and careful selection of materials, improvements in semiconductor device yield and performance can be delivered. Etch selectivity is controlled by using dilute gas, using assistive etch chemicals, controlling a magnitude of bias power used in the etching process, and controlling an amount of passivation gas used in the etching process, among other approaches. A recess is formed in a dummy fin in a region of the semiconductor where epitaxial growth occurs to further enlarge the epitaxy process window.

Abstract: The present invention provides methods and compositions for treating or reducing the symptoms of or preventing an RNA virus induced disease in a subject by cyclohexenone compounds.

Abstract: A radar reflective vehicle breakdown warning sign comprises primarily a body and a projecting lamp, and a remote control for connecting to the body and the projecting lamp. In an interior of the body is disposed a control circuit and a transmission component connected to the control circuit. The transmission component is pivotally connected to a vehicle breakdown warning sign. On the vehicle breakdown warning sign are disposed radar wave reflecting patches which may reflect the radar waves emitted by a vehicle with an autonomous driving function. In an interior of the projecting lamp is disposed a control circuit and a light emitting component connected to the control circuit.