Patents by Inventor Yunhao Xu

Yunhao Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Tunneling magneto-resistive sensors with buffer layers
    Patent number: 9082958
    Abstract: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.
    Type: Grant
    Filed: December 12, 2014
    Date of Patent: July 14, 2015
    Assignee: Seagate Technology LLC
    Inventors: Bin Lu, Qing He, Mark Covington, Yunhao Xu, Wei Tian
  • TUNNELING MAGNETO-RESISTIVE SENSORS WITH BUFFER LAYERS
    Publication number: 20150097255
    Abstract: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.
    Type: Application
    Filed: December 12, 2014
    Publication date: April 9, 2015
    Inventors: Bin Lu, Qing He, Mark Covington, Yunhao Xu, Wei Tian
  • Tunneling magneto-resistive sensors with buffer layers
    Patent number: 8922956
    Abstract: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: December 30, 2014
    Assignee: Seagate Technology LLC
    Inventors: Bin Lu, Qing He, Mark Covington, Yunhao Xu, Wei Tian
  • TUNNELING MAGNETO-RESISTIVE SENSORS WITH BUFFER LAYERS
    Publication number: 20110298456
    Abstract: In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy. In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy.
    Type: Application
    Filed: June 3, 2011
    Publication date: December 8, 2011
    Applicant: SEAGATE TECHNOLOGY LLC
    Inventors: BIN Lu, Qing He, Mark Covington, Yunhao Xu, Wei Tian