Patents by Inventor Yun-Ho Jang
Yun-Ho Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9629244Abstract: A connector assembly includes a first connector and a second connector. The first connector includes a first main body, a guide member disposed on a side surface of the first main body, and a connecting member disposed on the first main body. The second connector is configured to be combined with the first connector. The second connector includes a second main body, a fixing member disposed on a side surface of the second main body and rotatably connected to each side surfaces at an end portion of the second main body, and a connecting pad disposed on the second main body to contact with the connecting member. Thus, the first connector and the second connector may combine and separate easily, so that a damage of the connector assembly may be prevented.Type: GrantFiled: June 18, 2014Date of Patent: April 18, 2017Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Song-Ho Choi, Yun-Ho Jang
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Publication number: 20150222053Abstract: A connector assembly includes a first connector and a second connector. The first connector includes a first main body, a guide member disposed on a side surface of the first main body, and a connecting member disposed on the first main body. The second connector is configured to be combined with the first connector. The second connector includes a second main body, a fixing member disposed on a side surface of the second main body and rotatably connected to each side surfaces at an end portion of the second main body, and a connecting pad disposed on the second main body to contact with the connecting member. Thus, the first connector and the second connector may combine and separate easily, so that a damage of the connector assembly may be prevented.Type: ApplicationFiled: June 18, 2014Publication date: August 6, 2015Inventors: Song-Ho CHOI, Yun-Ho JANG
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Patent number: 8021912Abstract: A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region.Type: GrantFiled: January 29, 2009Date of Patent: September 20, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Yi Tae Kim, Kyung Ho Lee, Sae-Young Kim, Yun Ho Jang, Jung Chak Ahn
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Patent number: 7989861Abstract: An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image.Type: GrantFiled: August 22, 2008Date of Patent: August 2, 2011Assignee: SAMSUNG Electronics Co., Ltd.Inventors: Yi-Tae Kim, Sang-Il Jung, Yun-Ho Jang, Kyung-Ho Lee, Sae-Young Kim
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Patent number: 7990437Abstract: For color correction in an image sensor, an image sensor processing block generates a plurality of color correction parameters corresponding to a plurality of selected pixels of the image sensor for defining a plurality of areas of a sample image. In addition, a color correction value calculation block generates a respective color correction value corresponding to a given pixel from bilinear interpolation of a respective subset of the color correction parameters corresponding to a respective one of the areas including a respective location of the given pixel.Type: GrantFiled: June 11, 2007Date of Patent: August 2, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Bum-Suk Kim, Alexander Getman, Jong-Jin Lee, Yun-Ho Jang, Jung-Chak Ahn
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Patent number: 7709919Abstract: A solid-state image sensing device including an anti-reflection structure that uses polysilicon and a method of manufacturing the same, in which the solid-state image sensing device includes a photodiode region and a transistor region. The photodiode region includes a semiconductor substrate, a first anti-refection layer, a second anti-reflection layer, and a top layer. The first anti-reflection layer is formed on the semiconductor substrate, and the second anti-reflection layer is formed on the first anti-reflection layer. The top layer is formed on the second anti-reflection layer. Each of the semiconductor substrate and the second anti-reflection layer is formed of a first material, and each of the first anti-reflection layer and the top layer is formed of a second material different from the first material.Type: GrantFiled: February 27, 2007Date of Patent: May 4, 2010Assignee: Samsung Electronic Co., Ltd.Inventors: Getman Alexander, Bum-suk Kim, Yun-ho Jang, Sae-young Kim
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Patent number: 7595519Abstract: An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.Type: GrantFiled: March 6, 2007Date of Patent: September 29, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Jin Lee, Yo-Han Sun, Tae-Seok Oh, Sung-Jae Joo, Bum-Suk Kim, Yun-Ho Jang, Sae-Young Kim, Keun-Chan Yuk
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Publication number: 20090209058Abstract: A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region.Type: ApplicationFiled: January 29, 2009Publication date: August 20, 2009Inventors: Yi Tae Kim, Kyung Ho Lee, Sae-Young Kim, Yun Ho Jang, Jung Chak Ahn
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Patent number: 7560681Abstract: An image sensor may include a plurality of photodiodes for performing a photo-electric conversion and a plurality of microlenses. Each of the microlenses is formed over one of the photodiodes. The image sensor may further include a vertical light generating portion formed over the microlenses and configured to refract each of plurality of incident light rays such that the light rays are vertically incident on the microlenses.Type: GrantFiled: May 4, 2007Date of Patent: July 14, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Kyoung-Sik Moon, Bum-Suk Kim, Jong-Jin Lee, Yun-Ho Jang
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Publication number: 20090108312Abstract: An image sensor includes a substrate, an anti-reflection board and a light shielding film. The substrate includes first pixels to receive a light, and second pixels to provide a black level compensation. The first pixels are formed in an active region and the second pixels are formed in a first region spaced apart from the active region in a row direction. The anti-reflection board is formed in a second region above the substrate, and the second region is between the active region and the first region. The light shielding film is formed above the anti-reflection board, and the light shielding film covers an optical black region including the first and second regions. Therefore, the image sensor may be used in a CCD type image sensor and a CMOS type image sensor to provide a stabilized black level, thereby improving a quality of a displayed image.Type: ApplicationFiled: August 22, 2008Publication date: April 30, 2009Inventors: Yi-Tae Kim, Sang-Il Jung, Yun-Ho Jang, Kyung-Ho Lee, Sae-Young Kim
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Publication number: 20090072281Abstract: Provided is a layout of a CMOS image sensor having an asymmetrical pixel structure in which a plurality of photodiodes may share a transistor block. The layout may include a first region in which a plurality of photodiodes are arranged asymmetrically on a semiconductor substrate, a second region including a metal shield layer arranged on an upper surface of the first region, and a third region arranged on an upper surface of the second region. The metal shield layer may be arranged asymmetrically according to the layout of the photodiodes.Type: ApplicationFiled: May 28, 2008Publication date: March 19, 2009Inventors: Bum-suk Kim, Kyoung-sik Moon, Yun-ho Jang, Sae-young Kim
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Publication number: 20080203507Abstract: An image sensor includes a semiconductor substrate on which a plurality of photo diodes are formed. A plurality of interlayer dielectrics are formed above the semiconductor substrate, and a plurality of metal lines are formed on each of the interlayer dielectrics. A plurality of micro lenses are formed above the uppermost one of the interlayer dielectrics. The light passing through the zoom lenses is incident on the respective micro lenses. The plurality metal lines formed on at least one of the plurality of interlayer dielectrics have the same width.Type: ApplicationFiled: August 23, 2007Publication date: August 28, 2008Inventors: Kyoung-sik Moon, Jong-jin Lee, Bum-suk Kim, Yun-ho Jang, Jung-chak Ahn
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Publication number: 20080023624Abstract: An image sensor may include a plurality of photodiodes for performing a photo-electric conversion and a plurality of microlenses. Each of the microlenses is formed over one of the photodiodes. The image sensor may further include a vertical light generating portion formed over the microlenses and configured to refract each of plurality of incident light rays such that the light rays are vertically incident on the microlenses.Type: ApplicationFiled: May 4, 2007Publication date: January 31, 2008Inventors: Kyoung-Sik Moon, Bum-Suk Kim, Jong-Jin Lee, Yun-Ho Jang
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Publication number: 20080018757Abstract: For color correction in an image sensor, an image sensor processing block generates a plurality of color correction parameters corresponding to a plurality of selected pixels of the image sensor for defining a plurality of areas of a sample image. In addition, a color correction value calculation block generates a respective color correction value corresponding to a given pixel from bilinear interpolation of a respective subset of the color correction parameters corresponding to a respective one of the areas including a respective location of the given pixel.Type: ApplicationFiled: June 11, 2007Publication date: January 24, 2008Inventors: Bum-Suk Kim, Alexander Getman, Jong-Jin Lee, Yun-Ho Jang, Jung-Chak Ahn
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Publication number: 20070257282Abstract: An image sensor applying a power voltage to a backside of a semiconductor substrate includes a first type semiconductor substrate, a first type semiconductor layer formed on the first type semiconductor substrate, a second type semiconductor layer formed on the first type semiconductor layer, and a power voltage receiver formed on a backside of the first type semiconductor substrate opposite the first type semiconductor layer with respect to the first type semiconductor substrate, wherein the power voltage receiver receives a power voltage from outside and applies the power voltage to the first type semiconductor substrate.Type: ApplicationFiled: February 8, 2007Publication date: November 8, 2007Applicant: Samsung Electronics Co, Ltd.Inventors: Yo-han Sun, Jong-jin Lee, Bum-suk Kim, Yun-ho Jang, Sae-young Kim, Keun-chan Yuk, Getman Alexander
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Publication number: 20070210359Abstract: An image sensor includes a first type semiconductor layer, a second type semiconductor layer and a first type well. The first type semiconductor layer is formed on a semiconductor substrate and includes a plurality of pixels which receive external light and convert optical charges into an electrical signal. The second type semiconductor layer is supplied with a drain voltage to have a potential different from that of the first semiconductor layer, and the first type well controls a power source voltage (VDD) using the drain voltage.Type: ApplicationFiled: March 6, 2007Publication date: September 13, 2007Inventors: Jong-Jin Lee, Yo-Han Sun, Tae-Seok Oh, Sung-Jae Joo, Bum-Suk Kim, Yun-Ho Jang, Sae-Young Kim, Keun-Chan Yuk
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Publication number: 20070200056Abstract: An image sensor coated with an anti-reflection material having a microlens provided on a semiconductor substrate, the microlens corresponding to a light receiving device formed in the semiconductor substrate wherein the image sensor includes a first layer coated on a surface of the microlens, and a second layer coated on the first layer, wherein the second layer has a smaller refractive index than the first layer.Type: ApplicationFiled: January 26, 2007Publication date: August 30, 2007Inventors: Bum-suk Kim, Getman Alexander, Yun-ho Jang, Sae-young Kim, Jong-jin Lee, Yo-han Sun, Keun-chan Yuk
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Publication number: 20070201137Abstract: A solid-state image sensing device including an anti-reflection structure that uses polysilicon and a method of manufacturing the same, in which the solid-state image sensing device includes a photodiode region and a transistor region. The photodiode region includes a semiconductor substrate, a first anti-refection layer, a second anti-reflection layer, and a top layer. The first anti-reflection layer is formed on the semiconductor substrate, and the second anti-reflection layer is formed on the first anti-reflection layer. The top layer is formed on the second anti-reflection layer. Each of the semiconductor substrate and the second anti-reflection layer is formed of a first material, and each of the first anti-reflection layer and the top layer is formed of a second material different from the first material.Type: ApplicationFiled: February 27, 2007Publication date: August 30, 2007Inventors: Getman Alexander, Bum-suk Kim, Yun-ho Jang, Sae-young Kim
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Publication number: 20070134474Abstract: A color filter layer for use in an image sensing device includes first inorganic layers, each first inorganic layer having a first refractive index, and second inorganic layers, each second inorganic layer having a second refractive index, wherein the second refractive index is higher than the first refractive index, wherein the first and second inorganic layers are stacked on an optical sensor provided in the image sensing device to form a multi-layer, and the multi-layer includes fixed thickness layers each having a fixed thickness and a color decision layer having a thickness determined according to a wavelength band of light to be passed.Type: ApplicationFiled: December 8, 2006Publication date: June 14, 2007Inventors: Jung-Chak Ahn, Bum-suk Kim, Yun-ho Jang, Sae-young Kim