Patents by Inventor Yunho Kang

Yunho Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nonvolatile memory apparatus including resistive-change material layer
    Patent number: 11329223
    Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
    Type: Grant
    Filed: October 1, 2020
    Date of Patent: May 10, 2022
    Assignees: Samsung Electronics Co., Ltd., Seoul National University R&DB Foundation
    Inventors: Minhyun Lee, Seongjun Park, Hyunjae Song, Hyeonjin Shin, Kibum Kim, Sanghun Lee, Yunho Kang
  • NONVOLATILE MEMORY APPARATUS INCLUDING RESISTIVE-CHANGE MATERIAL LAYER
    Publication number: 20210020835
    Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
    Type: Application
    Filed: October 1, 2020
    Publication date: January 21, 2021
    Applicants: Samsung Electronics Co., Ltd., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Minhyun LEE, Seongjun PARK, Hyunjae SONG, Hyeonjin SHIN, Kibum KIM, Sanghun LEE, Yunho KANG
  • Nonvolatile memory apparatus including resistive-change material layer
    Patent number: 10811604
    Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: October 20, 2020
    Assignees: Samsung Electronics Co., Ltd., Seoul National University R&DB Foundation
    Inventors: Minhyun Lee, Seongjun Park, Hyunjae Song, Hyeonjin Shin, Kibum Kim, Sanghun Lee, Yunho Kang
  • NONVOLATILE MEMORY APPARATUS INCLUDING RESISTIVE-CHANGE MATERIAL LAYER
    Publication number: 20190123273
    Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.
    Type: Application
    Filed: September 27, 2018
    Publication date: April 25, 2019
    Applicants: Samsung Electronics Co., Ltd., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Minhyun Lee, Seongjun Park, Hyunjae Song, Hyeonjin Shin, Kibum Kim, Sanghun Lee, Yunho Kang