Abstract: A method of measuring a critical dimension (CD) includes forming a plurality of patterns in a substrate, creating first to n-th images, where n is a natural number greater than 1, for first to n-th areas in the substrate, respectively, where the first to n-th areas do not overlap with each other, where each of the first to n-th areas comprising at least some of the plurality of patterns, creating a merged image for the first to n-th images, and measuring a CD for a measurement object from the plurality of patterns using the merged image. The merged image has a higher resolution than each of the first to n-th images.

Abstract: A pattern inspection method includes converting sample patterns of a sample image into training images, extracting feature values of the training patterns, setting feature vectors of the training patterns on the basis of the feature values, converting the feature vectors into Gaussian vectors, clustering the Gaussian vectors, thereby sorting the Gaussian vectors into clusters, selecting a select vector from each of the clusters, storing, as a pattern model, the training pattern corresponding to the select vector in a database, converting a target pattern of a target image into an inspection pattern on the basis of the pattern model, and inspecting the inspection pattern.

Abstract: There are provided a method of accurately detecting a measurement error of SEM equipment by comparing and aligning a design image with an SEM image, and a method of accurately aligning SEM equipment based on a detected measurement error. The method of detecting a measurement error of SEM equipment includes acquiring SEM images of a measurement target, performing pre-processing on the SEM images and design images corresponding thereto, selecting training SEM images from among the SEM images, performing training by using the training SEM images and training design images and generating a conversion model between the SEM images and the design images, converting the SEM images into conversion design images by using the conversion model, extracting an alignment coordinate value by comparing and aligning the conversion design images with the design images, and determining a measurement error of the SEM equipment based on the alignment coordinate value.

Abstract: A method of measuring a critical dimension (CD) includes forming a plurality of patterns in a substrate, creating first to n-th images, where n is a natural number greater than 1, for first to n-th areas in the substrate, respectively, where the first to n-th areas do not overlap with each other, where each of the first to n-th areas comprising at least some of the plurality of patterns, creating a merged image for the first to n-th images, and measuring a CD for a measurement object from the plurality of patterns using the merged image. The merged image has a higher resolution than each of the first to n-th images.