Patents by Inventor Yunil Lee

Yunil Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10610515
    Abstract: A method of increasing PGC-1? expression in a mammalian cell, the method comprising administering an effective amount of indoprofen, a pharmaceutically acceptable salt thereof, or a solvate thereof to the cell.
    Type: Grant
    Filed: October 3, 2016
    Date of Patent: April 7, 2020
    Assignees: SAMSUNG ELECTRONICS CO., LTD., RESEARCH & BUSINESS FOUNDATION, SUNGKYUNKWAN UNIVERSITY
    Inventors: Sungchun Cho, Jongsun Kang, Sangchul Park, Yunil Lee, Hyebeen Kim, Hyeyoung Lee
  • Patent number: 10559673
    Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.
    Type: Grant
    Filed: February 25, 2019
    Date of Patent: February 11, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sungil Park, Changhee Kim, Yunil Lee, Mirco Cantoro, Junggun You, Donghun Lee
  • Publication number: 20190206867
    Abstract: A semiconductor substrate includes a plurality of gate electrodes crossing active patterns on a substrate and extending in a second direction, the gate electrodes spaced apart in the second direction from each other, a gate separation pattern having a major axis in the first direction and between two of the gate electrodes, the two of the gate electrodes adjacent to each other in the second direction, and a plurality of gate spacers covering sidewalls of respective ones of the gate electrodes, the gate spacers crossing the gate separation pattern and extending in the second direction. The gate separation pattern includes a lower portion extending in the first direction, an intermediate portion protruding from the lower portion and having a first width, and an upper portion between two adjacent gate spacers and protruding from the intermediate portion, the upper portion having a second width less than the first width.
    Type: Application
    Filed: July 9, 2018
    Publication date: July 4, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Jung Han LEE, Sungchul Park, Yunil Lee, Byoung-gi Kim, Yeongmin Jeon, Daewon Ha, Inchan Hwang, Jae Hyun Park, Woocheol Shin
  • Publication number: 20190189778
    Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.
    Type: Application
    Filed: February 25, 2019
    Publication date: June 20, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sungil PARK, Changhee KIM, Yunil LEE, Mirco CANTORO, Junggun YOU, Donghun LEE
  • Patent number: 10256324
    Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: April 9, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sungil Park, Changhee Kim, Yunil Lee, Mirco Cantoro, Junggun You, Donghun Lee
  • Publication number: 20180248018
    Abstract: A semiconductor device includes an active pillar on a substrate. A first source/drain region is disposed at a top end of the active pillar and has a greater width than the active pillar. A first insulating layer is disposed on a sidewall of the active pillar and a second insulating layer is disposed on at least a bottom surface of the first source/drain region. A gate electrode is disposed on the first insulating layer and the second insulating layer. A second source/drain region is disposed in the substrate at a bottom end of the active pillar. Methods of fabrication are also described.
    Type: Application
    Filed: July 31, 2017
    Publication date: August 30, 2018
    Inventors: Sungil Park, Changhee Kim, Yunil Lee, Mirco Cantoro, Junggun You, Donghun Lee
  • Patent number: 9820997
    Abstract: A method of accelerating remyelination or suppressing demyelination of neurons in a mammal, and a method of treating a disease associated with demyelination of neurons in a mammal.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: November 21, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yunil Lee, Kiyoung Chang, Sangchul Park, Sungchun Cho
  • Patent number: 9782371
    Abstract: A method of preventing or treating a disease associated with demyelination of a nerve cell in a mammal, a method of promoting remyelination or suppressing demyelination of a nerve cell in a mammal, and a method of reducing expression of PMP22 in a nerve cell of a mammal by administration of 2,5-dihydroxybenzenesulfonic acid or a pharmaceutically acceptable salt or solvate thereof.
    Type: Grant
    Filed: July 5, 2016
    Date of Patent: October 10, 2017
    Assignees: SAMSUNG ELECTRONICS CO., LTD., KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
    Inventors: Yunil Lee, Suhyun Kim, Haechul Park, Sangchul Park
  • Publication number: 20170157145
    Abstract: A method of inducing Parkin expression; inhibiting oxidative stress; and inhibiting cell death of cells by administering deferasirox, hydrocortisone, ketorolac, dexamethasone, and prednisone, a pharmaceutically acceptable salt, stereoisomer, derivative, or solvate thereof to the cell, optionally in a subject, as well as a method of preventing or treating neurodegenerative disease in the subject.
    Type: Application
    Filed: October 24, 2016
    Publication date: June 8, 2017
    Inventors: Yunil Lee, Yunjong Lee, Sangwoo Ham, Sangchul Park, Jooho Shin
  • Publication number: 20170095451
    Abstract: A method of increasing PGC-1? expression in a mammalian cell, the method comprising administering an effective amount of indoprofen, a pharmaceutically acceptable salt thereof, or a solvate thereof to the cell.
    Type: Application
    Filed: October 3, 2016
    Publication date: April 6, 2017
    Inventors: Sungchun Cho, Jongsun Kang, Sangchul Park, Yunil Lee, Hyebeen Kim, Hyeyoung Lee
  • Publication number: 20170049730
    Abstract: A method of preventing or treating a disease associated with demyelination of a nerve cell in a mammal, a method of promoting remyelination or suppressing demyelination of a nerve cell in a mammal, and a method of reducing expression of PMP22 in a nerve cell of a mammal by administration of 2,5-dihydroxybenzenesulfonic acid or a pharmaceutically acceptable salt or solvate thereof.
    Type: Application
    Filed: July 5, 2016
    Publication date: February 23, 2017
    Inventors: Yunil Lee, Suhyun Kim, Haechul Park, Sangchul Park
  • Publication number: 20160120884
    Abstract: A method of accelerating remyelination or suppressing demyelination of neurons in a mammal, and a method of treating a disease associated with demyelination of neurons in a mammal.
    Type: Application
    Filed: November 5, 2015
    Publication date: May 5, 2016
    Inventors: Yunil Lee, Kiyoung Chang, Sangchul Park, Sungchun Cho