Patents by Inventor Yunkyu PARK

Yunkyu PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • ELECTRONIC DEVICE INCLUDING HETEROGENEOUS SINGLECRYSTAL TRANSITION METAL OXIDE LAYER DISPOSED ON SUBSTRATE, AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20220416083
    Abstract: Provided is an electronic device including a semiconductor substrate, a single-crystal first transition metal oxide layer on the semiconductor substrate, and a single-crystal second transition metal oxide layer spaced apart from the semiconductor substrate with the single-crystal first transition metal oxide layer interposed therebetween. The first transition metal oxide layer and the second transition metal oxide layer are in contact with each other. The semiconductor substrate, the first transition metal oxide layer, and the second transition metal oxide layer include different materials from each other. The first transition metal oxide layer and the second transition metal oxide layer have the same crystal direction.
    Type: Application
    Filed: June 21, 2022
    Publication date: December 29, 2022
    Inventors: Junwoo SON, Yunkyu PARK, DongKyu LEE, Si-Young CHOI, Hyeji SIM
  • Method for manufacturing rutile titanium dioxide layer and semiconductor device including the same
    Patent number: 11466382
    Abstract: A method for method for manufacturing a rutile titanium dioxide layer according to the inventive concept includes forming a sacrificial layer on a substrate, and depositing a titanium dioxide (TiO2) material on the sacrificial layer. The sacrificial layer includes a metal oxide of a rutile phase. An amount of oxygen vacancy of the sacrificial layer after depositing the titanium dioxide material is greater than an amount of oxygen vacancy of the sacrificial layer before depositing the titanium dioxide material. The metal oxide includes a metal different from titanium (Ti).
    Type: Grant
    Filed: November 24, 2020
    Date of Patent: October 11, 2022
    Assignee: POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
    Inventors: Junwoo Son, Yunkyu Park, Jinheon Park
  • METHOD FOR MANUFACTURING RUTILE TITANIUM DIOXIDE LAYER AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
    Publication number: 20210317596
    Abstract: A method for method for manufacturing a rutile titanium dioxide layer according to the inventive concept includes forming a sacrificial layer on a substrate, and depositing a titanium dioxide (TiO2) material on the sacrificial layer. The sacrificial layer includes a metal oxide of a rutile phase. An amount of oxygen vacancy of the sacrificial layer after depositing the titanium dioxide material is greater than an amount of oxygen vacancy of the sacrificial layer before depositing the titanium dioxide material. The metal oxide includes a metal different from titanium (Ti).
    Type: Application
    Filed: November 24, 2020
    Publication date: October 14, 2021
    Applicant: POSTECH Research and Business Development Foundation
    Inventors: Junwoo SON, Yunkyu PARK, Jinheon PARK