Abstract: Disclosed herein are a semiconductor processing chamber, semiconductor processing equipment and vapor epitaxy equipment, solving technical problems of process gas uniformity, infrared radiation transmittance and pressure-bearing capacity in the field of semiconductor processing. Mainly, an upper cover of a processing chamber is covered by a pressure-bearing shell and a confined space is formed, a pressure-regulating device is configured to regulate air pressure of the confined space and further regulate air pressure borne by upper and lower surfaces of the upper cover of the semiconductor processing chamber, the structural design of the upper cover is optimized, such that, in a semiconductor processing process, in order to realize processing with higher uniformity and higher quality on a surface of a substrate, the upper cover can be improved in a larger range to obtain a more optimized processing space.

Abstract: The present application discloses a chemical vapor deposition equipment and method therefor, the equipment including: a reaction chamber; an outer housing provided outside the reaction chamber, an accommodation space being formed between the outer housing and the reaction chamber; a plurality of radiant heat sources provided in the accommodation space; and pressure adjusting device used for independently regulating the pressure in the reaction chamber and the accommodation space. Advantages thereof are as follows: the pressure of the accommodation space of the equipment is smaller than the atmospheric pressure, which helps to reduce the pressure on the wall of the reaction chamber while not affecting the heat transfer efficiency of the radiant heat sources, thereby contributing to the uniform heating of the reaction area in the reaction chamber, and improving the yield rate of substrate process production.

Abstract: Provided are a waste gas processing device, a vacuum coating system, and an operation method of the waste gas processing device. The waste gas processing device is configured to remove and recover arsenic in the waste gas, and includes a condensation portion and a scraping portion. The condensation portion is provided with a condensation cavity, and an air inlet, an air outlet and a discharge port communicated with the condensation cavity. A partial surface of the scraping portion abutting against an inner wall surface of the condensation cavity. The present disclosure solves a problem in a conventional art that an economic cost of a waste gas processing device is too high during the removal and recovery of arsenic in waste gas.