Abstract: An optical sensor that can receive light ranging from visible light to infrared light is provided. A thin beta-iron disilicide semiconductor film is formed on a silicon substrate. Light in the visible region is received by silicon, and light in the infrared region is received by beta-iron disilicide.

Abstract: In the air or in an inert gas atmosphere, powder raw materials are deposited on a flexible sheet for forming a film, an electrode, and a protective film under pressing a heating roller, and a device can be manufactured by continuous operations in which all the steps are integrated. There is provided a cheap device, by which the manhours for manufacturing a device is reduced, the throughput is improved in comparison with those of a previous device by which a film, an electrode, and a protective film have been manufactured on a crystal substrate in a vacuum.

Abstract: In the air or in an inert gas atmosphere, powder raw materials are deposited on a flexible sheet for forming a film, an electrode, and a protective film under pressing a heating roller, and a device can be manufactured by continuous operations in which all the steps are integrated. There is provided a cheap device, by which the manhours for manufacturing a device is reduced, the throughput is improved in comparison with those of a previous device by which a film, an electrode, and a protective film have been manufactured on a crystal substrate in a vacuum.

Abstract: An optical sensor that can receive light ranging from visible light to infrared light is provided. A thin beta-iron disilicide semiconductor film is formed on a silicon substrate. Light in the visible region is received by silicon, and light in the infrared region is received by beta-iron disilicide.

Abstract: A laser-beam annealing apparatus that provides reliable, continuous control of the intensity of the laser beam used to perform the annealing process.

Abstract: Disclosed is a semiconductor laser device capable of radiating a visible laser in which device an activation layer having an active stripe zone doped by ion-implantation of nitrogen atoms is vertically sandwiched between an overlying p-type confining layer and n-type confining layer, and the p-type confining layer is horizontally bounded by a p-n junction reverse bias layer, whereby in supplying a bias electric current through the p-type confining layer, the electric current avoids the counter bias layer to converge a flow through the active zone to the underlying n-type confining layer, thus attaining the same effect as would lower the threshold value of the luminescent semiconductor, and allowing the laser device to oscillate at an elevated efficiency in the range of visible laser.