Patents by Inventor Yunqing DAI

Yunqing DAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Optimization method and system for overlay error compensation
    Patent number: 10261426
    Abstract: An optimization method for overlay error compensation is disclosed.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: April 16, 2019
    Assignee: SHANGHAI HUALI MICROELECTRONICS CORPORATION
    Inventors: Yunqing Dai, Jian Wang
  • OPTIMIZATION METHOD AND SEYSTEM FOR OVERLAY ERROR COMPENSATION
    Publication number: 20180275529
    Abstract: An optimization method for overlay error compensation is disclosed.
    Type: Application
    Filed: November 1, 2017
    Publication date: September 27, 2018
    Inventors: Yunqing Dai, Jian Wang
  • Structure for critical dimension and overlay measurement
    Patent number: 8823936
    Abstract: The invention provides a structure for critical dimension and overlay measurement including a measuring unit, a first measurement pattern for measuring overlay and a second measurement pattern for measuring linewidth, line density and/or line semi-density. The first target pattern includes an outer bar structure disposed on a first layer and an inner bar structure disposed on a second layer; the outer bar structure and/or the inner bar structure has a same shared pattern structure with the second target pattern. The pattern structure includes four bars with the same shape positioned orthogonally and closely to each other, and at least two orthogonally positioned bars include N equally spaced rectangular lines of the same width, wherein, N is an odd number; the N rectangular lines include one central rectangular line and N?1 auxiliary rectangular lines.
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: September 2, 2014
    Assignee: Shanghai Huali Microelectronics Corporation
    Inventors: Yunqing Dai, Jian Wang, Zhibiao Mao
  • STRUCTURE FOR CRITICAL DIMENSION AND OVERLAY MEASUREMENT
    Publication number: 20130120739
    Abstract: The invention provides a structure for critical dimension and overlay measurement including a measuring unit, a first measurement pattern for measuring overlay and a second measurement pattern for measuring linewidth, line density and/or line semi-density. The first target pattern includes an outer bar structure disposed on a first layer and an inner bar structure disposed on a second layer; the outer bar structure and/or the inner bar structure has a same shared pattern structure with the second target pattern. The pattern structure includes four bars with the same shape positioned orthogonally and closely to each other, and at least two orthogonally positioned bars include N equally spaced rectangular lines of the same width, wherein, N is an odd number; the N rectangular lines include one central rectangular line and N?1 auxiliary rectangular lines.
    Type: Application
    Filed: November 2, 2012
    Publication date: May 16, 2013
    Inventors: Yunqing DAI, Jian WANG, Zhibiao MAO