Patents by Inventor Yun Seong Eo

Yun Seong Eo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12407096
    Abstract: A radiometer for a microwave receiver according to an embodiment of the present invention comprises: an antenna line through which radiation power corresponding to the temperature of a probe is received from an antenna; a first reference rod having a first reference temperature fixed in advance; a second reference rod having a second reference temperature fixed in advance; a first microwave switch for selectively switching the antenna line, the first reference load, and the second reference load; a second microwave switch switched with the same clock as the first microwave switch; a demodulator for multiplying a signal output from the second microwave switch by a predetermined gain value and outputting same; an integrator for integrating the signal output from the demodulator; and a controller for measuring the temperature of the probe on the basis of a signal output from the integrator.
    Type: Grant
    Filed: February 11, 2022
    Date of Patent: September 2, 2025
    Assignee: EASYTEM Co., Ltd.
    Inventors: Yun Seong Eo, Wonil Jang, Nam Yong Kim, Eun Seong Kim, Jaewoo Shin
  • Publication number: 20240204400
    Abstract: A radiometer for a microwave receiver according to an embodiment of the present invention comprises: an antenna line through which radiation power corresponding to the temperature of a probe is received from an antenna; a first reference rod having a first reference temperature fixed in advance; a second reference rod having a second reference temperature fixed in advance; a first microwave switch for selectively switching the antenna line, the first reference load, and the second reference load; a second microwave switch switched with the same clock as the first microwave switch; a demodulator for multiplying a signal output from the second microwave switch by a predetermined gain value and outputting same; an integrator for integrating the signal output from the demodulator; and a controller for measuring the temperature of the probe on the basis of a signal output from the integrator.
    Type: Application
    Filed: February 11, 2022
    Publication date: June 20, 2024
    Inventors: Yun Seong EO, Wonil JANG, Nam Yong KIM, Eun KIM, Jaewoo SHIN
  • Patent number: 7835716
    Abstract: An RF receiver and an RF receiving method are provided using a baseband signal in which a DC offset is removed. In the RF receiver, a noise phase removing unit generates a phase controlled local signal PLOQ in which a phase of a Q signal of a local signal LOQ is controlled, by synthesizing a received RF signal RXIN and the Q signal of the local signal LOQ. A down converter generates a signal in which a DC offset from noise introduced into the received RF signal RXIN is removed, when synthesizing the received RF signal RXIN and the phase controlled local signal PLOQ for frequency-down conversion.
    Type: Grant
    Filed: June 12, 2006
    Date of Patent: November 16, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ick Jin Kwon, Heung Bae Lee, Yun Seong Eo, Hee Mun Bang
  • Patent number: 7702047
    Abstract: An RF receiving apparatus and method which can remove a leakage component in a received signal are provided. In the RF receiving apparatus, a noise removing unit estimates a signal corresponding to a noise component introduced into a received RF signal RXIN by controlling a gain and a phase of a local signal LOI and removes the estimated noise signal from the received RF signal RXIN. An RF signal in which the noise is removed is frequency-down converted in a receiving unit. Also, the noise removing unit utilizes a Q signal of the local signal LOI, LOQ, to control the phase of the local signal LOI.
    Type: Grant
    Filed: May 18, 2006
    Date of Patent: April 20, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ick Jin Kwon, Heung Bae Lee, Yun Seong Eo
  • Patent number: 6285866
    Abstract: A single-chip radio structure with a piezoelectric crystal device integrated on a monolithic integrated circuit and a method of fabricating the same. A thin or thick piezoelectric crystal wafer is bonded on a silicon substrate and adjusted in thickness by mechanical grinding and polishing processes. Then, a surface acoustic wave resonator and other passive devices such as a filter, inductor, etc. are formed on the piezoelectric crystal wafer by a standard lithography process. Therefore, a high-precision oscillator and various passive devices can be included in a monolithic integrated circuit to implement a single-chip radio structure. This single-chip radio structure has the effect of reducing the volume and weight of the entire receiver while maintaining excellent performances provided by passive devices on a crystal substrate, such as frequency stability, frequency linearity and low power consumption, etc., as they are.
    Type: Grant
    Filed: June 21, 1999
    Date of Patent: September 4, 2001
    Assignee: Korea Advanced Institute of Science & Technology
    Inventors: Kwyro Lee, Yun Seong Eo, Seokbong Hyun