Abstract: The present invention relate to an antenna apparatus, and more particularly, to an antenna apparatus including an antenna housing part formed in a form of an enclosure opened at a front side thereof, a board assembly disposed to be tightly attached to an internal space defined by the antenna housing part, and a plurality of antenna RF modules arranged on a front surface of the board assembly, in which the antenna housing part is divided into at least three components, and the components are manufactured and then coupled to one another to prevent distortion caused by thermal stress between upper and lower ends due to a difference in heat generation amount between heating elements mounted on the board assembly, thereby preventing the antenna housing part from being distorted by thermal stress caused by imbalance of heat generated from the heating elements, and solving a PIMD problem by preventing an unintended movement and clearance of the internal antenna RF modules.

Abstract: The present invention relates to an RF module for an antenna, and an antenna apparatus comprising same. In particular, the RF module comprises: a unit RF filter body arranged on the front surface of a main board; a radiating element unit disposed on the front surface of the unit RF filter body; and a reflector panel which is formed to be wider than the area of the vertical cross-section of the unit RF filter body while forming the front surface of the unit RF filter body, and grounds (GND) the radiating element unit, wherein a plurality of cavities opened outward to the left and right are respectively formed on the left and right sides of the unit RF filter body, each cavity comprises a left filter unit and a right filter unit which have a built-in resonator so as to perform different frequency filtering, and the left filter unit and the right filter unit are electrically connected to the radiating element unit by passing through the reflector panel.

Abstract: Provided are a core-shell catalyst with improved durability and a manufacturing method thereof including irradiating ultrasonic waves to a solution containing a reducing solvent, a noble metal precursor, a transition metal precursor, and a carbon support to form a cavity due to the irradiation of the ultra-waves and forming transition metal precursor core and noble metal precursor shell particles due to a difference in vapor pressure; and nitriding the transition metal precursor core and noble metal precursor shell particles at a temperature of 450 to 550° C. and a pressure condition of 60 to 100 bar under a gaseous nitrogen source, in which the transition metal may be any one selected from the group consisting of Y, La, Ce, Zn, and Mn or combinations thereof.

Abstract: A remote plasma generator includes a body, a driver, and a protection tube. The body includes a gas injection port, a plasma exhaust port, and a plasma generation pipe through which discharge gas or plasma flow. The driver is coupled to the body and generates a magnetic field and plasma in the body. The protection tube is at an inner side of the plasma generation pipe to protect the plasma generation pipe from plasma.

Abstract: A remote plasma generator includes a body, a driver, and a protection tube. The body includes a gas injection port, a plasma exhaust port, and a plasma generation pipe through which discharge gas or plasma flow. The driver is coupled to the body and generates a magnetic field and plasma in the body. The protection tube is at an inner side of the plasma generation pipe to protect the plasma generation pipe from plasma.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.

Abstract: Provided are an apparatus for depositing a thin film using plasma which can prevent impurities from being formed by inhibiting plasma from being diffused into a nozzle pipe and sustained in the nozzle pipe and improve thickness uniformity of the deposited thin film and a method of depositing the same. The apparatus for depositing a thin film includes a chamber having a substrate holder and an inner space defined by an inner wall; and a nozzle pipe comprising a first end fixed to the inner wall of the chamber; a second end extending into the inner space of the chamber; a flow path penetrating the nozzle pipe from the first end to the second end; and at least one slit which is disposed at the second end and opens the flow path into the inner space of the chamber.

Abstract: There is provided a semiconductor etching apparatus which removes particles remaining on the upper surface of an electro static chuck (ESC) during an etching process, thereby preventing a chucking force from decreasing and minimizing a leak of helium. To prevent a failure of the etching process due to a wafer chucking failure, by preventing polymers from falling down on the upper part of the ESC when a wafer is dechucked or transferred, the semiconductor etching apparatus comprises: an ESC selectively holding a wafer to be entered and positioned inside a chamber, and including a lower electrode part to which RF power is applied; parts positioned at a stepped portion of the ESC and respectively surrounding a side of the ESC; and a gas flow blocking part blocking a gas flow in a vacuum path formed between the ESC and the parts.

Abstract: A photolithography system includes an application and development module, an exposure module, and an interface module interposed between the first two modules. Bake units for performing a post-exposure bake process are provided to both the application and development module and the interface module. The interface module also includes a buffer unit. An error detected within the application and development module would ordinarily stop operation of the post-exposure bake process in the application and development module. Upon detection of the error, communication between the auxiliary controller controlling the bake unit of the interface module and the exposure controller is made, and a wafer processed at the exposure module undergoes a post-exposure bake process at the bake unit of the interface module, and then is stored in the buffer unit of the interface module.

Abstract: A method for generating a plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. For example, a gas is flowed through a pipe in a first direction. Electricity is conducted through the pipe in substantially the first direction. And a magnetic field is applied along a second direction (e.g., perpendicular to the first direction) to the gas flowing in the pipe such that a plasma is induced in the pipe.

Abstract: A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.

Abstract: A substrate manufacturing apparatus comprises a transfer chamber, at least one process chamber disposed adjacent to a lateral face of the transfer chamber, and a substrate transfer module including at least two transfer robots which transfer a substrate to the process chamber, the substrate transfer module being disposed at the transfer chamber. Each of the at least two transfer robots comprises a blade including at least two supporters for supporting a substrate, an arm part connected to the blade to move the blade, and an arm driving part for driving the blade and the arm part.

Abstract: Provided is a high density plasma chemical vapor deposition (HDP-CVD) apparatus that includes a plurality of nozzles and/or injection pipes arranged for injecting a source gas mixture into a reaction chamber. The nozzles will each include an outlet region that includes a plurality of outlet channels or ports, the outlet channels are, in turn, configured to have a sufficiently small width and a sufficient length to suppress the formation of a plasma within the source gases passing through the respective nozzles. By suppressing the formation of a plasma within the nozzles, the thickness of deposits formed on the nozzles during the deposition processes can be maintained at a level generally no greater than deposits formed on the other chamber surfaces. This control of the deposit thickness allows the nozzles to be cleaned effectively by the same cleaning process applied to the chamber.

Abstract: A pedestal of a load-cup for supporting wafers loaded onto and being unloaded from a chemical mechanical polishing (CMP) apparatus includes a pedestal plate, and a pedestal film which extends over only a limited area at the upper surface of the pedestal plate. This area includes the regions directly around the fluid ports provided in the pedestal plate for vacuum-chucking the wafers and spraying deionized water. The pedestal plate may have a cross-shaped part, the entirety of which bears the fluid ports. The pedestal film may include annular members each extending around only a respective one of the fluid ports, or one or more members each extending radially around several of the fluid ports. By offering a rather limited contact area to the wafer supported on the pedestal, the pedestal film reduces the amount of contaminants which could be transferred to the wafer surface in contact therewith.

Abstract: An input/output valve switching apparatus of a semiconductor manufacturing system minimizes a vibration set up while operating an input/output valve for opening and closing a wafer-transfer passage that connects chambers of the system. The switching apparatus includes a valve actuator having a close port and an open port, a first fluid line connected to the close port, a second fluid line connected to the open port, first flow regulators installed in the first and second fluid lines, respectively, to regulate the flow rate of fluid, and second fluid flow regulators installed in the first and second fluid lines to regulate the flow rate of the fluid that has passed. The second fluid flow regulators can prevent a rapid introduction of the fluid into the actuator.

Abstract: An apparatus for matching the impedance of an RF generator to the impedance of an RF load, for use in manufacturing semiconductor devices by using a plasma. The apparatus includes a variable inductor coupled to a variable capacitor and an invariable capacitor, the variable inductor having two inductors coupled electrically with each other in series and disposed adjacent to each other. At least one of the two inductors is disposed movably to make the magnetic flux of the one inductor interfere with the magnetic flux of the other inductor, thereby to control the inductance of the variable inductor. In the case of a plasma enhanced semiconductor wafer processing system, the apparatus can reduce the time necessary to achieve an RF match between the RF generator and the RF load, thereby increasing the life of the apparatus.