Abstract: A multilayer electronic component includes a body including a capacitance formation portion including dielectric layers and internal electrodes alternately disposed in a first direction, and a cover portion disposed on both end surfaces of the capacitance formation portion, facing each other in the first direction, and having a first surface and a second surface opposing each other in the first direction, a third surface and a fourth surface connected to the first and second surfaces and opposing each other in a second direction, and a fifth surface and a sixth surface connected to the first to fourth surfaces and opposing each other in a third direction, and external electrodes disposed on the third and fourth surfaces. The internal electrodes and the dielectric layers protrude more outwardly than the cover portion in the second direction, and a groove is disposed at an end of the dielectric layer in the second direction.

Abstract: The present disclosure relates to a cleaning agent composition for a substrate for a semiconductor device and a method for cleaning a substrate for a semiconductor device using the same. The cleaning agent composition contains a silicon-based compound represented by Formula 1 and an aprotic organic solvent with a dielectric constant of 10 or less, which can form a surface protective film capable of preventing collapse of the pattern even in a wet cleaning process of fine patterns with high aspect ratios, thereby providing a method for manufacturing a semiconductor device with an improved semiconductor manufacturing yield.

Abstract: A capacitor component includes a body, including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer. At least one hole is formed in the internal electrode layer, and a region, containing at least one selected from the group consisting of indium (In) and tin (Sn), is disposed in the hole. A method of manufacturing a capacitor component includes forming a dielectric green sheet, forming a conductive thin film, including a first conductive material and a second conductive material, on the dielectric green sheet, and sintering the conductive thin film to form an internal electrode layer. The internal electrode layer includes the first conductive material, and a region, including the second conductive material, is formed in the internal electrode layer.

Abstract: An active noise control system selects one reference sensor providing a reference signal with the largest coherence to a noise signal, among a plurality of available reference sensors, as a first entry of a reference sensor set. After selecting the first entry, the active noise control system repeats a process in which a sensor capable of providing the largest information quantity to a current reference sensor set among remaining sensors is selected as a new entry of a reference sensor set, until a desired number of sensors is reached or a desired control level is reached. When the reference sensor set is determined, the active noise control system utilizes the entries of the reference sensor set to generates a noise control signal suitable for canceling the noise signal.

Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

Abstract: A multilayer electronic component includes a body including a plurality of internal electrodes and a dielectric layer disposed between the plurality of internal electrodes; and an external electrode disposed on the body and connected to the plurality of internal electrodes, wherein each of the plurality of internal electrodes includes a plurality of nickel layers, and a heterogeneous material layer provided between the plurality of nickel layers.

Abstract: A multilayer electronic component includes a body including a plurality of internal electrodes and a dielectric layer disposed between the plurality of internal electrodes; and an external electrode disposed on the body and connected to the plurality of internal electrodes, wherein each of the plurality of internal electrodes includes a plurality of nickel layers, and a heterogeneous material layer provided between the plurality of nickel layers.

Abstract: A multilayer capacitor includes a body including a stack structure in which a plurality of dielectric layers are stacked and a plurality of internal electrodes stacked with respective dielectric layers interposed therebetween, external electrodes disposed on external surfaces of the body and connected to the internal electrodes, and an insulating layer covering a surface of the body. One of the external electrodes includes a metal layer connected to the insulating layer, and the insulating layer includes an oxide of a metal component of the metal layer.

Abstract: A multilayer electronic component includes a body including a plurality of internal electrodes and a dielectric layer disposed between the plurality of internal electrodes; and an external electrode disposed on the body and connected to the plurality of internal electrodes, wherein each of the plurality of internal electrodes includes a plurality of nickel layers, and a heterogeneous material layer provided between the plurality of nickel layers.

Abstract: A multilayer electronic component includes a body having a dielectric layer and first and second internal electrodes alternately disposed with the dielectric layer interposed therebetween. The body has a hexahedral shape. A first external electrode includes a first connection portion disposed on a third surface, and first and third band portions extending from the first connection portion respectively onto a portion of a first and a second surface. A second external electrode includes a second connection portion disposed on a fourth surface, and second and fourth band portions extending from the second connection portion respectively onto a portion of the first and second surfaces. An insulating layer including an oxide containing hafnium is disposed on the first and second connection portions and covers the second surface and the third and fourth band portions. First and second plating layers are disposed respectively on the first and second band portions.

Abstract: A multilayer capacitor includes a body including a stack structure in which a plurality of dielectric layers are stacked and a plurality of internal electrodes stacked with respective dielectric layers interposed therebetween, external electrodes disposed on external surfaces of the body and connected to the internal electrodes, and an insulating layer covering a surface of the body. One of the external electrodes includes a metal layer connected to the insulating layer, and the insulating layer includes an oxide of a metal component of the metal layer.

Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode alternately disposed with the dielectric layer interposed therebetween in a first direction; and an external electrode disposed on the body and connected to the internal electrode, wherein 0.46 to 1.08 at% is a range of an indium (In) content compared to nickel (Ni) and indium (In) contents in a surface layer portion of the internal electrode.

Abstract: A capacitor component includes a body, including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer. At least one hole is formed in the internal electrode layer, and a region, containing at least one selected from the group consisting of indium (In) and tin (Sn), is disposed in the hole. A method of manufacturing a capacitor component includes forming a dielectric green sheet, forming a conductive thin film, including a first conductive material and a second conductive material, on the dielectric green sheet, and sintering the conductive thin film to form an internal electrode layer. The internal electrode layer includes the first conductive material, and a region, including the second conductive material, is formed in the internal electrode layer.

Abstract: A multilayer capacitor includes a body including a stack structure in which a plurality of dielectric layers are stacked and a plurality of internal electrodes stacked with respective dielectric layers interposed therebetween, external electrodes disposed on external surfaces of the body and connected to the internal electrodes, and an insulating layer covering a surface of the body. One of the external electrodes includes a metal layer connected to the insulating layer, and the insulating layer includes an oxide of a metal component of the metal layer.

Abstract: The present disclosure relates to an electronic element package and a method of manufacturing the same. The electronic element package includes a substrate, an element disposed on the substrate, a cap enclosing the element, a bonding portion bonding the substrate to the cap, and blocking portions disposed on both sides of the bonding portion.

Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

Abstract: A thin film capacitor includes a body including alternately stacked first and second electrode layers and dielectric layers on a substrate, the second electrode layer including a second lower electrode layer and a second upper electrode layer formed on the second lower electrode layer, the second lower electrode layer including a material having a higher band gap energy than the first electrode layer and the second upper electrode layer.

Abstract: A thin film capacitor includes: a body formed by alternately stacking first and second electrode layers, with dielectric layers therebetween on a substrate. A plurality of first vias are disposed in the body and electrically connected to the first electrode layers. A plurality of second vias are disposed in the body, electrically connected to the second electrode layers, and disposed alternately with the first vias. A first connection electrode is disposed on an upper surface of the body and connected to the plurality of first vias, a second connection electrode is disposed on the upper surface of the body and connected to the plurality of second vias, and first and second electrode pads are disposed on the first and second connection electrodes, respectively, and formed to not overlap the plurality of first and second vias.

Abstract: A thin film capacitor includes a capacitor body formed by alternately stacking first and second electrode layers and a dielectric layer on a substrate, and having the second electrode layer disposed in an uppermost portion thereof, and a stress alleviation layer formed on the uppermost second electrode layer. The stress alleviation layer is formed of a material having a coefficient of thermal expansion higher than those of the substrate and the dielectric layer.