Abstract: A composition and use thereof. The composition comprises an active component a and an active component b; the active component a is a compound as shown in general formula A; and the active component b is at least one of compounds which have insecticidal, acaricidal or bactericidal activity and are different from the compound as shown in general formula A. The composition has the advantages of synergistic effect and expanding prevention and treatment spectrum, and can be used for preventing and treating various pests, particularly mite damage, and plant diseases caused by various fungi, bacteria, nematodes and viruses.

Abstract: A wafer clamp according to one embodiment includes an outer ring, and at least three members extending inwardly from the outer ring, each of the members having a contact area for engaging a wafer. A system includes a structure having at least one ring, each ring being for receiving a wafer, and a wafer clamp configured to clamp a wafer to each ring, the wafer clamp having an outer ring, and at least three members extending inwardly from the outer ring, each of the members having a contact area for engaging a wafer.

Abstract: The method and apparatus of the embodiments of the present invention employ an in-situ particle decontamination technique that allows for such decontamination while a wafer is a vacuum tool or deposition chamber, thereby eliminating the need for another device for performing decontamination. This in-situ decontamination is effective for particle contamination resulting, for example, from tool resident mechanical component. Furthermore, particle decontamination is performed in the presence of plasma, having a potential for helping to maximize a “self bias” voltage, under RF conditions, and is integrated into the vacuum process.

Abstract: A perpendicular write head includes a main pole comprising high moment magnetic layers laminated with both soft magnetic layers and non-magnetic layers for antiferromagnetic coupling (AFC) between the high moment material layers. The perpendicular write head includes a return pole connected to the main pole by a back gap closure at a distal end and separated from the main pole by a gap at an air bearing surface (ABS). A write coil is positioned between the main pole and the return pole and the surface area of the return pole at the ABS is substantially larger than the surface area of the main pole at the ABS.

Abstract: A giant magnetoresistive (GMR) head is formed to include a recess in an overcoat layer that reduces stress on the poles. The process includes depositing a seed layer over the overcoat layer prior to plating a metal mask layer with an opening where the recess is to be formed, wet chemical etching the seed layer through the opening in the mask layer and performing an ion milling process to remove any remaining traces of the seed layer. With the seed layer completely removed, a trench having smooth sidewalls and bottom is etched in the overcast layer by a reactive ion etch (RIE) process. The saw that is used to separate the head elements in the wafer can be passed through the clean trench without contacting the overcoat layer, thereby avoiding the chipping and cracking that might otherwise result from the use of a silicon dioxide or silicon nitride overcoat layer.

Abstract: A perpendicular write head includes a main pole comprising a Durimide/Alumina hard mask formed over a laminate layer process to form the main pole without using a liftoff or chemical mechanical polishing process, thereby avoiding rounding corners of the pole, the main pole being controlled in shape for improved control of critical dimension of track width and angle of the bevel to avoid undesirable adjacent track writing.

Abstract: A perpendicular write head including a main pole and a trailing shield, the main pole being made of a diamond-like carbon (DLC) layer as hard mask and a rhodium (Rh) layer as shield gap, both DLC and Rh layers being CMP stop layers so as to avoid corner rounding and damage from chemical mechanical planarization (CMP) process, the DLC layer being removed by reactive ion etching (RIE) to create a trench, the trailing shield being deposited into the trench for self alignment.

Abstract: The method and apparatus of the embodiments of the present invention employ an in-situ particle decontamination technique that allows for such decontamination while a wafer is a vacuum tool or deposition chamber, thereby eliminating the need for another device for performing decontamination. This in-situ decontamination is effective for particle contamination resulting, for example, from tool resident mechanical component. Furthermore, particle decontamination is performed in the presence of plasma, having a potential for helping to maximize a “self bias” voltage, under RF conditions, and is integrated into the vacuum process.

Abstract: A giant magnetoresistive (GMR) head contains an overcoat layer consisting of silicon dioxide or silicon nitride. These materials have a coefficient of thermal expansion (CTE) that is less than alumina, which is conventionally used for the overcoat layer. As a result, the overcoat layer exhibits a smaller temperature-induced protrusion when the head heats up from friction with the passing air stream. The process of forming the head includes forming a recess in the overcoat layer that reduces the stress on the poles and improves the performance of the head. The process includes depositing a seed layer over the overcoat layer in preparation to plating a metal mask layer with an opening where the recess is to be formed, wet chemical etching the seed layer through the opening in the mask layer and performing an ion milling process to remove any remaining traces of the seed layer.

Abstract: A perpendicular write head includes a main pole comprising high moment magnetic layers laminated with both soft magnetic layers and non-magnetic layers for antiferromagnetic coupling (AFC) between the high moment material layers.

Abstract: A perpendicular write head includes a main pole comprising a Durimide/Alumina hard mask formed over a laminate layer process to form the main pole without using a liftoff or chemical mechanical polishing process, thereby avoiding rounding corners of the pole, the main pole being controlled in shape for improved control of critical dimension of track width and angle of the bevel to avoid undesirable adjacent track writing.

Abstract: A giant magnetoresistive (GMR) head contains an overcoat layer consisting of silicon dioxide or silicon nitride. These materials have a coefficient of thermal expansion (CTE) that is less than alumina, which is conventionally used for the overcoat layer. As a result, the overcoat layer exhibits a smaller temperature-induced protrusion when the head heats up from friction with the passing air stream. The process of forming the head includes forming a recess in the overcoat layer that reduces the stress on the poles and improves the performance of the head. The process includes depositing a seed layer over the overcoat layer in preparation to plating a metal mask layer with an opening where the recess is to be formed, wet chemical etching the seed layer through the opening in the mask layer and performing an ion milling process to remove any remaining traces of the seed layer.

Abstract: A perpendicular write head including a main pole and a trailing shield, the main pole being made of a diamond-like carbon (DLC) layer as hard mask and a rhodium (Rh) layer as shield gap, both DLC and Rh layers being CMP stop layers so as to avoid corner rounding and damage from chemical mechanical planarization (CMP) process, the DLC layer being removed by reactive ion etching (RIE) to create a trench, the trailing shield being deposited into the trench for self alignment.