Abstract: An embodiment of the present disclosure provides a vacuum apparatus, which relates to a display technical field. The vacuum apparatus can eliminate an electrostatic adsorption between a substrate and an electrode so as to avoid damages to the substrate. The vacuum apparatus includes: a vacuum cavity; a first electrode and a second electrode located inside the vacuum cavity and opposite to each other; and positioning structures for positioning the substrate. The substrate is located between the first electrode and the second electrode and is positioned closer to the first electrode or the second electrode. The vacuum apparatus further includes an electrostatic elimination device.

Abstract: A manufacturing method of a thin film transistor comprises: sequentially forming a pattern of gate, a gate insulation layer film, an active layer film and an ohmic contact layer film, a first etching resist module within a channel region to be formed, and a source and drain metallic layer film on a substrate; forming a pattern comprising the source and drain by wet etching process by shielding the active layer film and the ohmic contact layer film positioned within the channel region to be formed, by use of the first etching resist module; and forming a pattern comprising the ohmic contact layer and the active layer by dry etching process. A thin film transistor, an array substrate comprising the thin film transistor and a display device comprising the array substrate are also disclosed.

Abstract: An embodiment of the present disclosure provides a vacuum apparatus, which relates to a display technical field. The vacuum apparatus can eliminate an electrostatic adsorption between a substrate and an electrode so as to avoid damages to the substrate. The vacuum apparatus includes: a vacuum cavity; a first electrode and a second electrode located inside the vacuum cavity and opposite to each other; and positioning structures for positioning the substrate. The substrate is located between the first electrode and the second electrode and is positioned closer to the first electrode or the second electrode. The vacuum apparatus further includes an electrostatic elimination device.

Abstract: A liquid crystal display (LCD) array substrate and a manufacturing method thereof are provided. The manufacturing method comprises depositing a semiconductor layer, a doped semiconductor layer and a metal film for source and drain electrodes sequentially on a base substrate and then forming a data line, a source electrode, a drain electrode and a thin film transistor (TFT) channel region by a first patterning process; depositing a first insulating film and a gate metal film sequentially and then forming a gate line and a gate electrode by a second patterning process and forming an insulating layer via hole in the first insulating layer above the drain electrode; depositing a transparent conductive film and then forming a pixel electrode by a third patterning process; and forming a second insulating layer.

Abstract: A method of forming a photoresist burr edge and a method of manufacturing an array substrate are provided in the present invention. The method of manufacturing an array substrate comprises: forming a gate line and a gate electrode on a substrate; forming a data line, a source electrode, a drain electrode and a TFT channel region without removing the photoresist on the data line, the source electrode and the drain electrode; depositing a passivation layer; removing the remained photoresist and the passivation layer thereon by a lifting-off process; applying a photoresist layer; forming a photoresist burr edge of peak shape; depositing a transparent conductive film; forming a pixel electrode by a lifting-off process, wherein the pixel electrode is directly connected with the drain electrode.

Abstract: A liquid crystal display (LCD) array substrate and a manufacturing method thereof are provided. The manufacturing method comprises depositing a semiconductor layer, a doped semiconductor layer and a metal film for source and drain electrodes sequentially on a base substrate and then forming a data line, a source electrode, a drain electrode and a thin film transistor (TFT) channel region by a first patterning process; depositing a first insulating film and a gate metal film sequentially and then forming a gate line and a gate electrode by a second patterning process and forming an insulating layer via hole in the first insulating layer above the drain electrode; depositing a transparent conductive film and then forming a pixel electrode by a third patterning process; and forming a second insulating layer.

Abstract: A method of forming a photoresist burr edge and a method of manufacturing an array substrate are provided in the present invention. The method of manufacturing an array substrate comprises: forming a gate line and a gate electrode on a substrate; forming a data line, a source electrode, a drain electrode and a TFT channel region without removing the photoresist on the data line, the source electrode and the drain electrode; depositing a passivation layer; removing the remained photoresist and the passivation layer thereon by a lifting-off process; applying a photoresist layer; forming a photoresist burr edge of peak shape; depositing a transparent conductive film; forming a pixel electrode by a lifting-off process, wherein the pixel electrode is directly connected with the drain electrode.

Abstract: A liquid crystal display (LCD) array substrate and a manufacturing method thereof are provided. The manufacturing method comprises depositing a semiconductor layer, a doped semiconductor layer and a metal film for source and drain electrodes sequentially on a base substrate and then forming a data line, a source electrode, a drain electrode and a thin film transistor (TFT) channel region by a first patterning process; depositing a first insulating film and a gate metal film sequentially and then forming a gate line and a gate electrode by a second patterning process and forming an insulating layer via hole in the first insulating layer above the drain electrode; depositing a transparent conductive film and then forming a pixel electrode by a third patterning process; and forming a second insulating layer.