Abstract: A thermal interface material including at least a low melting point gallium alloy and a mercapto group-containing silicone oil, as well as an emulsifying compound, at least one polymer, a thermally conductive powder, and a coupling compound.

Abstract: A timing controller includes: a field programmable gate array configured to generate a reference clock signal, and obtain at least one group of clock signals according to the reference clock signal. Each group of clock signals includes at least two clock signals, and a waveform of each clock signal is same as a waveform of the reference clock signal, and active levels in different clock signals are provided with a delay of a preset duration. The reference clock signal includes a first clock sub-signal for first duration and a second clock sub-signal for a second duration. At least one output interface group is connected to the field programmable gate array. Each output interface group includes at least two output interfaces, and each of the at least two output interfaces is configured to output one clock signal of a group of clock signals corresponding to the output interface group.

Abstract: A timing controller includes: a field programmable gate array configured to generate a reference clock signal, and obtain at least one group of clock signals according to the reference clock signal. Each group of clock signals includes at least two clock signals, and a waveform of each clock signal is same as a waveform of the reference clock signal, and active levels in different clock signals are provided with a delay of a preset duration. The reference clock signal includes a first clock sub-signal for first duration and a second clock sub-signal for a second duration. At least one output interface group is connected to the field programmable gate array. Each output interface group includes at least two output interfaces, and each of the at least two output interfaces is configured to output one clock signal of a group of clock signals corresponding to the output interface group.

Abstract: A pixel circuit and driving method thereof, a display device are provided, and the pixel circuit includes a switching sub-circuit, a threshold voltage extraction sub-circuit, an initialization sub-circuit, a feedback compensation sub-circuit, a driving transistor and a light emitting device. The threshold voltage extraction sub-circuit is coupled to a control electrode of the driving transistor, and configured to extract and store a threshold voltage of the driving transistor in response to an enable signal and configured to apply the threshold voltage and a data voltage written by the switching sub-circuit to the control electrode of the driving transistor. The feedback compensation sub-circuit is coupled to a second terminal of the light emitting device and a data line, and configured to generate a data voltage compensation signal for a next display image frame according to an operating current of the light emitting device and supply it to the data line. (FIG. 1).

Abstract: A pixel circuit and driving method thereof, a display device are provided, and the pixel circuit includes a switching sub-circuit, a threshold voltage extraction sub-circuit, an initialization sub-circuit, a feedback compensation sub-circuit, a driving transistor and a light emitting device. The threshold voltage extraction sub-circuit is coupled to a control electrode of the driving transistor, and configured to extract and store a threshold voltage of the driving transistor in response to an enable signal and configured to apply the threshold voltage and a data voltage written by the switching sub-circuit to the control electrode of the driving transistor. The feedback compensation sub-circuit is coupled to a second terminal of the light emitting device and a data line, and configured to generate a data voltage compensation signal for a next display image frame according to an operating current of the light emitting device and supply it to the data line. (FIG. 1).

Abstract: A bond type flip-chip light-emitting structure and method of manufacturing the same. Firstly, form a positive electrode and a negative electrode on an epitaxy layer. Next, deposit an insulation layer on parts of the positive electrode and negative electrode, to expose respectively a positive electrode via hole and a negative electrode via hole. Then, form a bonded metal layer on the insulation layer, the positive electrode via hole, and the negative electrode via hole, so that the positive electrode and the negative electrode are on a same plane by means of the bonded metal layer. Finally, on a substrate, bond the first metal layer and the second metal layer onto the corresponding first bonded metal unit and the second bonded metal unit of the bonded metal layer, to form into shape, thus realizing a bond type flip-chip light-emitting structure.

Abstract: A bond type flip-chip light-emitting structure and method of manufacturing the same. Firstly, form a positive electrode and a negative electrode on an epitaxy layer. Next, deposit an insulation layer on parts of the positive electrode and negative electrode, to expose respectively a positive electrode via hole and a negative electrode via hole. Then, form a bonded metal layer on the insulation layer, the positive electrode via hole, and the negative electrode via hole, so that the positive electrode and the negative electrode are on a same plane by means of the bonded metal layer. Finally, on a substrate, bond the first metal layer and the second metal layer onto the corresponding first bonded metal unit and the second bonded metal unit of the bonded metal layer, to form into shape, thus realizing a bond type flip-chip light-emitting structure.