Patents by Inventor Yunzhe YANG

Yunzhe YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GASBOX FOR SEMICONDUCTOR PROCESSING CHAMBER
    Publication number: 20230343608
    Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.
    Type: Application
    Filed: July 3, 2023
    Publication date: October 26, 2023
    Applicant: Applied Materials, Inc.
    Inventors: Rahul Rajeev, Yunzhe Yang, Abhijit A. Kangude, Kedar Joshi
  • Gasbox for semiconductor processing chamber
    Patent number: 11694908
    Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.
    Type: Grant
    Filed: October 22, 2020
    Date of Patent: July 4, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Rahul Rajeev, Yunzhe Yang, Abhijit A. Kangude, Kedar Joshi
  • Dome stress isolating layer
    Patent number: 11326256
    Abstract: Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: May 10, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Luke Bonecutter, Yunzhe Yang, Rupankar Choudhury, Abhijit Kangude
  • GASBOX FOR SEMICONDUCTOR PROCESSING CHAMBER
    Publication number: 20220130687
    Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.
    Type: Application
    Filed: October 22, 2020
    Publication date: April 28, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Rahul Rajeev, Yunzhe Yang, Abhijit A. Kangude, Kedar Joshi
  • DOME STRESS ISOLATING LAYER
    Publication number: 20200181772
    Abstract: Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.
    Type: Application
    Filed: November 21, 2019
    Publication date: June 11, 2020
    Inventors: Luke BONECUTTER, Yunzhe YANG, Rupankar CHOUDHURY, Abhijit KANGUDE