Patents by Inventor Yupeng Chen
Yupeng Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240387510Abstract: In an example, a semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor region of the first conductivity type over the semiconductor substrate. A well region of a second conductivity type is in the semiconductor region. A doped region of the first conductivity type is in the well region. A doped region of the second conductivity type is in the well region. A doped region of the second conductivity type is in the semiconductor substrate at a bottom side. A doped region of the first conductivity type is in the semiconductor substrate at the bottom side. A first conductor is at a top side of the semiconductor region and a second conductor is at the bottom side. In some examples, one or more of doped regions at the bottom side is a patterned doped region.Type: ApplicationFiled: July 19, 2024Publication date: November 21, 2024Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Derrick JOHNSON, Yupeng CHEN, Ralph N. WALL, Mark GRISWOLD
-
Patent number: 12087760Abstract: In an example, a semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor region of the first conductivity type over the semiconductor substrate. A well region of a second conductivity type is in the semiconductor region. A doped region of the first conductivity type is in the well region. A doped region of the second conductivity type is in the well region. A doped region of the second conductivity type is in the semiconductor substrate at a bottom side. A doped region of the first conductivity type is in the semiconductor substrate at the bottom side. A first conductor is at a top side of the semiconductor region and a second conductor is at the bottom side. In some examples, one or more of doped regions at the bottom side is a patterned doped region.Type: GrantFiled: May 6, 2022Date of Patent: September 10, 2024Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Derrick Johnson, Yupeng Chen, Ralph N. Wall, Mark Griswold
-
Patent number: 12052834Abstract: The present disclosure relates to the field of display technology, and proposes an attaching device for a flexible display panel, including a flexible adsorption plate, a first adjustment rod, and a second adjustment rod. The flexible adsorption plate is configured to be bendable and adsorb a flexible layer of the flexible display panel. The first end of the first adjustment rod is connected to the first end of the second adjustment rod, the second end of the first adjustment rod is connected to the first side of the flexible adsorption plate, and the second end of the second adjustment rod is connected to the second side opposite to the first side of the flexible adsorption plate. For at least one of the first and second adjustment rods, the second end is configured to be movable relative to the first end for adjusting the degree of bending of the flexible layer.Type: GrantFiled: March 25, 2021Date of Patent: July 30, 2024Assignees: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Fei Li, Zhihao Xie, Yupeng Chen, Bowen Xiao
-
Publication number: 20240203975Abstract: In an example, a semiconductor device includes a first steering diode and a second steering diode at a top side of a region of semiconductor material, a first Zener diode buried within the region of semiconductor material, and a second Zener diode at a bottom side of the region of semiconductor material. The semiconductor device is configured as a bi-directional electrostatic discharge (ESD) structure. The first Zener diode and the first steering diodes are configured to respond to a positive ESD pulse, and the second Zener diode and the second steering diode are configured to respond to a negative ESD pulse. The steering diodes are configured to have low capacitances and the Zener diodes are configured to provide enhanced ESD protection. Other related examples and methods are disclosed herein.Type: ApplicationFiled: February 27, 2024Publication date: June 20, 2024Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Steven M. ETTER, Yupeng CHEN
-
Publication number: 20240164076Abstract: A display panel, a display module and a manufacture method thereof, and a communication device are provided. The display panel includes a display substrate and a multiplexing circuit arranged on a first surface of the display substrate. The display panel further includes a wave-absorbing material layer arranged on a second surface of the display substrate. The wave-absorbing material layer is configured to absorb electromagnetic wave interference signals. The second surface is a surface opposite to the first surface.Type: ApplicationFiled: January 22, 2024Publication date: May 16, 2024Inventors: Chao WANG, Binfeng FENG, Yonghui LUO, Fei LI, Yupeng CHEN, Jiaxiang WANG, Zijie ZHANG, Qifeng LI
-
Publication number: 20240156853Abstract: The compositions and methods of the invention provide compositions and methods for preferential targeting of tissues to delivery therapeutic or diagnostic agents. For example, such compounds are useful in the treatment of joint disorders those affecting articulating joints, e.g., injury-induced osteoarthritis as well as autoimmune diseases affecting joint tissue such as rheumatoid arthritis.Type: ApplicationFiled: May 12, 2023Publication date: May 16, 2024Inventors: Qian CHEN, Yupeng CHEN, Hongchuan YU
-
Patent number: 11948933Abstract: In an example, a semiconductor device includes a first steering diode and a second steering diode at a top side of a region of semiconductor material, a first Zener diode buried within the region of semiconductor material, and a second Zener diode at a bottom side of the region of semiconductor material. The semiconductor device is configured as a bi-directional electrostatic discharge (ESD) structure. The first Zener diode and the first steering diodes are configured to respond to a positive ESD pulse, and the second Zener diode and the second steering diode are configured to respond to a negative ESD pulse. The steering diodes are configured to have low capacitances and the Zener diodes are configured to provide enhanced ESD protection. Other related examples and methods are disclosed herein.Type: GrantFiled: February 9, 2022Date of Patent: April 2, 2024Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Steven M. Etter, Yupeng Chen
-
Publication number: 20240089551Abstract: An interaction method, an interaction apparatus, and an electronic device are provided. The method includes: determining, in response to detecting a predefined size transformation operation, target transformation information of a target video based on whether a current size of the target video is a preset anchor point size, where the target video is a video played in a video play area; and transforming the target video based on the target transformation information, and playing the transformed target video.Type: ApplicationFiled: November 20, 2023Publication date: March 14, 2024Inventors: Anni WU, Xiaolin LI, Hongyu YANG, Yupeng CHEN, Yingjie SUN, Panyi YANG
-
Patent number: 11925010Abstract: A display panel, a display module and a manufacture method thereof, and a communication device are provided. The display panel includes a display substrate and a multiplexing circuit arranged on a first surface of the display substrate. The display panel further includes a wave-absorbing material layer arranged on a second surface of the display substrate. The wave-absorbing material layer is configured to absorb electromagnetic wave interference signals. The second surface is a surface opposite to the first surface.Type: GrantFiled: August 28, 2019Date of Patent: March 5, 2024Assignees: CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Chao Wang, Binfeng Feng, Yonghui Luo, Fei Li, Yupeng Chen, Jiaxiang Wang, Zijie Zhang, Qifeng Li
-
Patent number: 11887981Abstract: In a general aspect, an apparatus can include a semiconductor layer of a first conductivity type and a lateral bipolar device disposed in the semiconductor layer. The apparatus can further include an isolation trench disposed in the semiconductor layer in a base region of the lateral bipolar device. The isolation trench can be disposed between an emitter implant of the lateral bipolar device and a collector implant of the lateral bipolar device. The emitter implant and the collector implant can be of a second conductivity type, opposite the first conductivity type.Type: GrantFiled: October 1, 2020Date of Patent: January 30, 2024Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventor: Yupeng Chen
-
Publication number: 20240032165Abstract: A circuit for a lighting assembly includes a power supply, a first light source connected with an output of the power supply, and a second light source connected with the output of the power. The first and second light sources are connected with the output of the power supply in parallel. At least one integrated chip including a driver is configured to regulate the current to each of the first light source and the second light source. A switch is configured to select a brightness level of each of the first and second light sources configured to appear similar to the characteristics of a halogen or incandescent light source.Type: ApplicationFiled: August 23, 2022Publication date: January 25, 2024Applicant: HKC-US, LLCInventors: YUPENG CHEN, Fengyong Jiang
-
Publication number: 20240028382Abstract: A method and an apparatus for starting a secure container are provided. The method includes: adding a container image into a secure container in a read-only manner when starting a first container corresponding to the container image in the secure container; aggregating a read-write layer of the first container with the container image in the secure container to obtain a file system of the first container; and aggregating a read-write layer of a second container with the container image when starting the second container corresponding to the added container image in the secure container to obtain a file system of the second container.Type: ApplicationFiled: September 29, 2023Publication date: January 25, 2024Inventors: Huamin TANG, Yupeng CHEN
-
Patent number: 11863835Abstract: An interaction method, an interaction apparatus, and an electronic device are provided. The method includes: determining, in response to detecting a predefined size transformation operation, target transformation information of a target video based on whether a current size of the target video is a preset anchor point size, where the target video is a video played in a video play area; and transforming the target video based on the target transformation information, and playing the transformed target video.Type: GrantFiled: August 12, 2022Date of Patent: January 2, 2024Assignee: DOUYIN VISION CO., LTD.Inventors: Anni Wu, Xiaolin Li, Hongyu Yang, Yupeng Chen, Yingjie Sun, Panyi Yang
-
Publication number: 20230372536Abstract: Disclosed herein are self-assembled nanomaterials that include a Janus base nanotube having a biologically active molecule noncovalently adhered thereto, wherein the biologically active molecule is an extracellular matrix (ECM) molecule, a bioactive molecule, or a combination thereof.Type: ApplicationFiled: October 13, 2021Publication date: November 23, 2023Inventor: Yupeng CHEN
-
Publication number: 20230361107Abstract: In an example, a semiconductor device includes a semiconductor substrate of a first conductivity type and a semiconductor region of the first conductivity type over the semiconductor substrate. A well region of a second conductivity type is in the semiconductor region. A doped region of the first conductivity type is in the well region. A doped region of the second conductivity type is in the well region. A doped region of the second conductivity type is in the semiconductor substrate at a bottom side. A doped region of the first conductivity type is in the semiconductor substrate at the bottom side. A first conductor is at a top side of the semiconductor region and a second conductor is at the bottom side. In some examples, one or more of doped regions at the bottom side is a patterned doped region.Type: ApplicationFiled: May 6, 2022Publication date: November 9, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Derrick JOHNSON, Yupeng CHEN, Ralph N. WALL, Mark GRISWOLD
-
Publication number: 20230343777Abstract: In an example, a semiconductor device includes a region of semiconductor material with a buried doped region of a first conductivity type. A first well region of the first conductivity type is in the region of semiconductor material and is electrically coupled to the buried doped region. A second well region of a second conductivity type is in the region of semiconductor material and has a first peak dopant concentration. A third well region of the second conductivity type abuts edges of the second well region. The third well region is interposed between the first well region and the second well region and has a second peak dopant concentration that is different than the first peak dopant concentration. A doped anode region of the second conductivity type is in the first well region, a doped cathode region of the first conductivity type is in the second well region, and a doped contact region of the second conductivity type is in the second well region.Type: ApplicationFiled: April 20, 2022Publication date: October 26, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Rouying ZHAN, Yupeng CHEN
-
Publication number: 20230253397Abstract: In an example, a semiconductor device includes a first steering diode and a second steering diode at a top side of a region of semiconductor material, a first Zener diode buried within the region of semiconductor material, and a second Zener diode at a bottom side of the region of semiconductor material. The semiconductor device is configured as a bi-directional electrostatic discharge (ESD) structure. The first Zener diode and the first steering diodes are configured to respond to a positive ESD pulse, and the second Zener diode and the second steering diode are configured to respond to a negative ESD pulse. The steering diodes are configured to have low capacitances and the Zener diodes are configured to provide enhanced ESD protection. Other related examples and methods are disclosed herein.Type: ApplicationFiled: February 9, 2022Publication date: August 10, 2023Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLCInventors: Steven M. ETTER, Yupeng CHEN
-
Patent number: 11701379Abstract: The compositions and methods of the invention provide compositions and methods for preferential targeting of tissues to delivery therapeutic or diagnostic agents. For example, such compounds are useful in the treatment of joint disorders those affecting articulating joints, e.g., injury-induced osteoarthritis as well as autoimmune diseases affecting joint tissue such as rheumatoid arthritis.Type: GrantFiled: March 26, 2019Date of Patent: July 18, 2023Assignee: Rhode Island HospitalInventors: Qian Chen, Yupeng Chen, Hongchuan Yu
-
Publication number: 20230183253Abstract: Compositions or an assembly of a series of biomimetic compounds include chemical structures that mimic or structurally resemble a nucleic acid base pair. Complexes of nanotubes and agents are useful to deliver agents into the cells or bodily tissues of individuals for therapeutic and diagnostic purposes. Exemplary compounds include those of Formula (I), (III), (V) or (VII), or of Formula (II), (IV), (VI) or (VIII).Type: ApplicationFiled: January 18, 2023Publication date: June 15, 2023Inventors: Qian CHEN, Hongchuan YU, Yupeng CHEN
-
Publication number: 20230171472Abstract: An interaction method, an interaction apparatus, and an electronic device are provided. The method includes: determining, in response to detecting a predefined size transformation operation, target transformation information of a target video based on whether a current size of the target video is a preset anchor point size, where the target video is a video played in a video play area; and transforming the target video based on the target transformation information, and playing the transformed target video.Type: ApplicationFiled: August 12, 2022Publication date: June 1, 2023Inventors: Anni WU, Xiaolin LI, Hongyu YANG, Yupeng CHEN, Yingjie SUN, Panyi YANG