Patents by Inventor Yupeng Gao
Yupeng Gao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240134532Abstract: An electronic device, a method of determining a memory access efficiency for a memory, and a storage medium are provided, which relate to a field of computer technology, and in particular to fields of chip, memory and processor technologies. The electronic device includes: a memory configured to store executable instructions and data to be processed; and a processor configured to execute the executable instructions so as to at least: read a data block to be tested from the memory; determine a memory access description information according to a size information of the data block to be tested; and determine, according to the memory access description information and a channel description information, a memory access efficiency of the processor in reading the data block to be tested, where the channel description information describes a plurality of channels for the processor to read the data to be processed from the memory.Type: ApplicationFiled: November 27, 2023Publication date: April 25, 2024Applicant: KUNLUNXIN TECHNOLOGY (BEIJING) COMPANY LIMITEDInventors: Daheng GAO, Liang SHAN, Yupeng LI, Chen FENG
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Patent number: 11895867Abstract: A method of reducing color breakup of reflection of ambient light in a display panel having a color breakup-prevention structure is provided. The color breakup-prevention structure includes a high refractive index lens layer on a side of a plurality of light emitting elements away from a base substrate; a low refractive index modulation layer on a side of the high refractive index lens layer away from the base substrate; a first color filter layer in a plurality of subpixel regions, and spaced apart from the high refractive index lens layer by the low refractive index modulation layer; and a first black matrix layer in an inter-subpixel region, and spaced apart from the high refractive index lens layer by the low refractive index modulation layer. The high refractive index lens layer includes a plurality of lens portions spaced apart from each other and respectively in the plurality of subpixels.Type: GrantFiled: December 17, 2019Date of Patent: February 6, 2024Assignee: BOE Technology Group Co., Ltd.Inventors: Kai Sui, Zhongyuan Sun, Yupeng Gao, Chao Dong, Chuanxiang Xu
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Publication number: 20230352496Abstract: Disclosed are an array substrate and a display panel. The array substrate includes: a base substrate; a first thin film transistor on the base substrate; where the first thin film transistor includes: a first gate electrode, a first active layer, a first source electrode, and a first drain electrode; where the first active layer includes: at least one guide structure extending in a first direction; a silicon-based nanowire, disposed on a side of the guide structure facing away from the base substrate; and an extending direction of the silicon-based nanowire is same as an extending direction of the guide structure.Type: ApplicationFiled: June 12, 2023Publication date: November 2, 2023Inventors: Guangcai YUAN, Xue DONG, Feng GUAN, Yupeng GAO
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Patent number: 11790181Abstract: A current observation expressed in natural language is received. Entities in the current observation are extracted. A relevant historical observation is retrieved, which has at least one of the entities in common with the current observation. The current observation and the relevant historical observation are combined as observations. The observations and a template list specifying a list of verb phrases to be filled-in with at least some of the entities are input to a neural network, which can output the template list of the verb phrases filled-in with said at least some of the entities. The neural network can include attention mechanism. A reward associated with the neural network's output can be received and fed back to the neural network for retraining the neural network.Type: GrantFiled: August 19, 2020Date of Patent: October 17, 2023Assignee: International Business Machines CorporationInventors: Xiaoxiao Guo, Mo Yu, Yupeng Gao, Chuang Gan, Shiyu Chang, Murray Scott Campbell
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Patent number: 11715744Abstract: This disclosure provides an array substrate, a method for preparing the array substrate, and a display panel. The method includes: forming a first thin film transistor and a second thin film transistor on a base substrate. In the formation of an active layer of the first thin film transistor, by using an eutectic point of the catalyst particle and silicon, and a driving factor that the Gibbs free energy of amorphous silicon is greater than that of crystalline silicon (silicon-based nanowire), and due to absorption of the amorphous silicon by the molten catalyst particle to form a supersaturated silicon eutectoid, the silicon nucleates and grows into a silicon-based nanowire. Moreover, during the growth of the silicon-based nanowire, the amorphous silicon film grows linearly along guide structure under the action of the catalyst particle, thus obtaining a silicon-based nanowire with a high density and high uniformity.Type: GrantFiled: March 25, 2020Date of Patent: August 1, 2023Assignee: BOE Technology Group Co., Ltd.Inventors: Guangcai Yuan, Xue Dong, Feng Guan, Yupeng Gao
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Publication number: 20230154939Abstract: This disclosure provides an array substrate, a method for preparing the array substrate, and a display panel. The method includes: forming a first thin film transistor and a second thin film transistor on a base substrate. In the formation of an active layer of the first thin film transistor, by using an eutectic point of the catalyst particle and silicon, and a driving factor that the Gibbs free energy of amorphous silicon is greater than that of crystalline silicon (silicon-based nanowire), and due to absorption of the amorphous silicon by the molten catalyst particle to form a supersaturated silicon eutectoid, the silicon nucleates and grows into a silicon-based nanowire. Moreover, during the growth of the silicon-based nanowire, the amorphous silicon film grows linearly along guide structure under the action of the catalyst particle, thus obtaining a silicon-based nanowire with a high density and high uniformity.Type: ApplicationFiled: March 25, 2020Publication date: May 18, 2023Inventors: Guangcai YUAN, Xue DONG, Feng GUAN, Yupeng GAO
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Publication number: 20230116030Abstract: A method of reducing color breakup of reflection of ambient light in a display panel having a color breakup-prevention structure is provided. The color breakup-prevention structure includes a high refractive index lens layer on a side of a plurality of light emitting elements away from a base substrate; a low refractive index modulation layer on a side of the high refractive index lens layer away from the base substrate; a first color filter layer in a plurality of subpixel regions, and spaced apart from the high refractive index lens layer by the low refractive index modulation layer; and a first black matrix layer in an inter-subpixel region, and spaced apart from the high refractive index lens layer by the low refractive index modulation layer. The high refractive index lens layer includes a plurality of lens portions spaced apart from each other and respectively in the plurality of subpixels.Type: ApplicationFiled: December 17, 2019Publication date: April 13, 2023Applicant: BOE Technology Group Co., Ltd.Inventors: Kai Sui, Zhongyuan Sun, Yupeng Gao, Chao Dong, Chuanxiang Xu
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Patent number: 11605239Abstract: Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.Type: GrantFiled: April 8, 2020Date of Patent: March 14, 2023Assignee: BOE Technology Group Co., Ltd.Inventors: Shipei Li, Ying Zhao, Renquan Gu, Wei He, Huili Wu, Dongsheng Yin, Sheng Xu, Lizhen Zhang, Xuefei Zhao, Fang He, Yupeng Gao
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Patent number: 11469336Abstract: The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.Type: GrantFiled: January 17, 2020Date of Patent: October 11, 2022Assignee: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD.Inventors: Jianhua Du, Chao Li, Zhaohui Qiang, Yupeng Gao, Feng Guan, Rui Huang, Zhi Wang, Yang Lv, Chao Luo
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Publication number: 20220320449Abstract: A thin film transistor, a method for manufacturing the same and a display device are disclosed, the thin film transistor includes: a first electrode, a second electrode, an active layer and a flexible conductive layer located on a substrate, one of the first electrode and the second electrode is a source, and the other thereof is a drain; the active layer is electrically coupled with the first electrode, and an orthographic projection of the active layer on the substrate is within an orthographic projection of the first electrode on the substrate; the flexible conductive layer is located on a side of the active layer away from the first electrode, and electrically couples the active layer with the second electrode.Type: ApplicationFiled: December 29, 2020Publication date: October 6, 2022Inventors: Lizhong WANG, Tianmin ZHOU, Yupeng GAO, Ning DANG
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Patent number: 11288578Abstract: A computer system identifies threads in a communication session. A feature vector is generated for a message in a communication session, wherein the feature vector includes elements for features and contextual information of the message. The message feature vector and feature vectors for a plurality of threads are processed using machine learning models each associated with a corresponding thread to determine a set of probability values for classifying the message into at least one thread, wherein the threads include one or more pre-existing threads and a new thread. A classification of the message into at least one of the threads is indicated based on the set of probability values. Classification of one or more prior messages is adjusted based on the message's classification. Embodiments of the present invention further include a method and program product for identifying threads in a communication session in substantially the same manner described above.Type: GrantFiled: October 10, 2019Date of Patent: March 29, 2022Assignee: International Business Machines CorporationInventors: Dakuo Wang, Ming Tan, Mo Yu, Haoyu Wang, Yupeng Gao, Chuang Gan
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Publication number: 20220058345Abstract: A current observation expressed in natural language is received. Entities in the current observation are extracted. A relevant historical observation is retrieved, which has at least one of the entities in common with the current observation. The current observation and the relevant historical observation are combined as observations. The observations and a template list specifying a list of verb phrases to be filled-in with at least some of the entities are input to a neural network, which can output the template list of the verb phrases filled-in with said at least some of the entities. The neural network can include attention mechanism. A reward associated with the neural network's output can be received and fed back to the neural network for retraining the neural network.Type: ApplicationFiled: August 19, 2020Publication date: February 24, 2022Inventors: Xiaoxiao Guo, Mo Yu, Yupeng Gao, Chuang Gan, Shiyu Chang, Murray Scott Campbell
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Patent number: 11251208Abstract: A photosensor includes a base substrate; an insulating layer on the base substrate; and a photodiode including a semiconductor junction on a side of the insulating layer away from the base substrate. The semiconductor junction includes a first polarity semiconductor layer, an intrinsic semiconductor layer, and a second polarity semiconductor layer, stacked on the insulating layer. The second polarity semiconductor layer encapsulates a lateral surface of the intrinsic semiconductor layer.Type: GrantFiled: March 18, 2019Date of Patent: February 15, 2022Assignee: BOE Technology Group Co., Ltd.Inventors: Chao Li, Jianhua Du, Feng Guan, Zhaohui Qiang, Zhi Wang, Yupeng Gao, Yang Lv
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Patent number: 11251207Abstract: The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.Type: GrantFiled: April 13, 2020Date of Patent: February 15, 2022Assignee: BOE Technology Group Co., Ltd.Inventors: Yupeng Gao, Guangcai Yuan, Feng Guan, Zhi Wang, Jianhua Du, Zhaohui Qiang, Chao Li
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Patent number: 11232750Abstract: A display substrate, a display panel, and a manufacturing method and a driving method of a display substrate are provided. The display substrate includes a base substrate, a pixel circuit, and a photosensitive unit. The pixel circuit and the photosensitive unit are on the base substrate, the pixel circuit includes a first transistor, and an orthographic projection of the photosensitive unit on the base substrate at least partially overlaps with an orthographic projection of the first transistor on the base substrate.Type: GrantFiled: January 29, 2019Date of Patent: January 25, 2022Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Lizhong Wang, Rui Huang, Yupeng Gao, Jiangnan Lu, Shuilang Dong
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Patent number: 11183610Abstract: The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.Type: GrantFiled: June 23, 2020Date of Patent: November 23, 2021Assignee: BOE Technology Group Co., Ltd.Inventors: Chao Li, Jianhua Du, Feng Guan, Yupeng Gao, Zhaohui Qiang, Zhi Wang, Yang Lyu, Chao Luo
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Patent number: 11121257Abstract: The present disclosure provides a thin film transistor, a pixel structure, a display device, and a manufacturing method. The thin film transistor includes: a gate on the substrate; a gate insulating layer covering the gate and the substrate; a first support portion and a second support portion, which are provided on the gate insulating layer covering the substrate and located on both sides of the gate, wherein the first support portion is not connected to the second support portion; a semiconductor layer on the first support portion, the second support portion, and the gate insulating layer covering the gate; and a source and a drain respectively connected to the semiconductor layer. The first support portion and the second support portion are respectively configured to support the semiconductor layer.Type: GrantFiled: February 22, 2019Date of Patent: September 14, 2021Assignee: BOE Technology Group Co., Ltd.Inventors: Zhaohui Qiang, Feng Guan, Zhi Wang, Yupeng Gao, Yang Lyu, Chao Li, Jianhua Du, Lei Chen
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Publication number: 20210225286Abstract: A display substrate, a display panel, and a manufacturing method and a driving method of a display substrate are provided. The display substrate includes a base substrate, a pixel circuit, and a photosensitive unit. The pixel circuit and the photosensitive unit are on the base substrate, the pixel circuit includes a first transistor, and an orthographic projection of the photosensitive unit on the base substrate at least partially overlaps with an orthographic projection of the first transistor on the base substrate.Type: ApplicationFiled: January 29, 2019Publication date: July 22, 2021Applicant: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Lizhong WANG, Rui HUANG, Yupeng GAO, Jiangnan LU, Shuilang DONG
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Publication number: 20210217909Abstract: The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.Type: ApplicationFiled: January 17, 2020Publication date: July 15, 2021Inventors: Jianhua DU, Chao LI, Zhaohui QIANG, Yupeng GAO, Feng GUAN, Rui HUANG, Zhi WANG, Yang LV, Chao LUO
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Publication number: 20210158007Abstract: Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.Type: ApplicationFiled: April 8, 2020Publication date: May 27, 2021Applicant: BOE TECHNOLOGY GROUP CO., LTD.Inventors: Shipei LI, Ying ZHAO, Renquan GU, Wei HE, Huili WU, Dongsheng YIN, Sheng XU, Lizhen ZHANG, Xuefei ZHAO, Fang HE, Yupeng GAO