Abstract: A guanidinate silane compound of any of formulae (I)-(IV) is described, having utility as a precursor in vapor deposition processes for forming a silicon-containing film on a substrate. The guanidinate silane compound can be used in vapor deposition processes such as chemical vapor deposition and atomic layer deposition, at temperatures below 400° C., to form silicon-containing films, e.g., silicon nitride films, useful as diffusion barrier layers, etch stop layers, and sidewall coating films, in integrated circuitry, flat-panel displays, solar panels, and other microelectronic and optoelectronic applications.

Abstract: A method for preparing a TiAl alloy thin film, wherein a reaction chamber is provided, in which at least one substrate is placed; an aluminum precursor and a titanium precursor are introduced into the reaction chamber, wherein the aluminum precursor has a molecular structure of a structural formula (I); and the aluminum precursor and the titanium precursor are brought into contact with the substrate so that a titanium-aluminum alloy thin film is formed on the surface of the substrate by vapor deposition. The method solves the problem of poor step coverage ability and the problem of incomplete filling with regard to the small-size devices by the conventional methods. Meanwhile, the formation of titanium-aluminum alloy thin films with the aid of plasma is avoided so that the substrate is not damaged by plasma.

Abstract: The present invention provides a method for growing ni-containing thin film with single atomic layer deposition technology, comprising steps of: A) placing a substrate in a reaction chamber, and under the vacuum condition, passing a gas-phase Ni source in a form of pulses into the reaction chamber for deposition to obtain a substrate deposited with the Ni source, the Ni source comprising a compound having a structure of Formula I; B) passing a gas-phase reducing agent in a form of pulses into the reaction chamber to reduce the Ni source deposited on the substrate, obtaining a substrate deposited with a Ni thin film. The application of the Ni source having a structure of Formula I in the single atomic layer deposition technology allows a Ni-containing deposition layer with good shape retention to be deposited and formed on a nano-sized semiconductor device.

Abstract: Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R1, R2, R3, R4, R5, R6, and R7 each independently represent a hydrogen atom, C1˜C6 alkyl, halo-C1˜C6 alkyl, C2˜C5 alkenyl, halo-C2˜C5 alkenyl, C3˜C10 cycloalkyl, halo-C3˜C10 cycloalkyl, C6˜C10 aryl, halo-C6˜C10 aryl or —Si(R0)3, and wherein R0 is C1˜C6 alkyl or halo-C1˜C6 alkyl. According to the present invention, based on the interaction principle between molecules, aluminum precursors for thin-film deposition are provided, which have a good thermal stability, are not susceptible to decomposition and convenient for storage and transportation, have good volatility at a high temperature, and are excellent in film formation.

Abstract: A method for preparing a TiAl alloy thin film, wherein a reaction chamber is provided, in which at least one substrate is placed; an aluminum precursor and a titanium precursor are introduced into the reaction chamber, wherein the aluminum precursor has a molecular structure of a structural formula (I); and the aluminum precursor and the titanium precursor are brought into contact with the substrate so that a titanium-aluminum alloy thin film is formed on the surface of the substrate by vapor deposition. The method solves the problem of poor step coverage ability and the problem of incomplete filling with regard to the small-size devices by the conventional methods. Meanwhile, the formation of titanium-aluminum alloy thin films with the aid of plasma is avoided so that the substrate is not damaged by plasma.