Abstract: Apparatuses and methods to provide fully self-aligned first metallization lines, M1, via, and second metallization lines, M2, are described. A first metallization line comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate; a second metallization line comprising a set of second conductive lines on an etch stop layer above the first metallization line, the set of second conductive lines extending along a second direction that crosses the first direction at an angle; and at least one via between the first metallization line and the second metallization line, the at least one via comprising a via metallization layer, wherein the at least one via is self-aligned along the second direction to one of the first metallization lines and the at least one via is self-aligned along the first direction to one of the second metallization lines, the second direction crossing the first direction at an angle.

Abstract: Embodiments disclosed herein include a method of developing a metal oxo photoresist with a non-wet process. In an embodiment, the method comprises providing a substrate with the metal oxo photoresist into a chamber. In an embodiment, the metal oxo photoresist comprises exposed regions and unexposed regions, and the unexposed regions comprise a higher carbon concentration than the exposed regions. In an embodiment, the method further comprises flowing a gas into the chamber, wherein the gas reacts with the unexposed regions to produce a volatile byproduct.

Abstract: Apparatuses and methods to provide fully self-aligned first metallization lines, M1, via, and second metallization lines, M2, are described. A first metallization line comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate; a second metallization line comprising a set of second conductive lines on an etch stop layer above the first metallization line, the set of second conductive lines extending along a second direction that crosses the first direction at an angle; and at least one via between the first metallization line and the second metallization line, the at least one via comprising a via metallization layer, wherein the at least one via is self-aligned along the second direction to one of the first metallization lines and the at least one via is self-aligned along the first direction to one of the second metallization lines, the second direction crossing the first direction at an angle.