Abstract: Methods and media for analyzing electrical designs are provided. A method includes and the media are configured for providing or loading to an analysis tool a design that includes a plurality of cell instances of a standard cell and estimating a failure rate of the design using in context electrical parameters for the plurality of cell instances and a parameterized electromigration (EM) view of the standard cell. Another method includes providing a standard cell of a standard cell library and characterizing the standard cell to create a parameterized thermal model to compute a temperature of an internal structure of the standard cell and a parameterized current model to compute a current through the internal structure of the standard cell given in context electrical parameters.

Abstract: A system and method for providing a statistical budgeting approach to modeling reliability effects such as interconnect electromigration (EM), transistor time-dependant dielectric breakdown (TDDB), hot-carrier injection effects (HCI) and bias temperature instability (BTI) is disclosed. A static analysis flow captures the effects of design topology, switching constraints, interactions between signal nets and supply rails as well as thermal gradients due to interconnect and transistor self as well as mutual heating, and was used to verify successive iterations of deep sub-micron integrated circuit designs.

Abstract: A system and method for providing a statistical budgeting approach to modeling reliability effects such as interconnect electromigration (EM), transistor time-dependant dielectric breakdown (TDDB), hot-carrier injection effects (HCI) and bias temperature instability (BTI) is disclosed. A static analysis flow captures the effects of design topology, switching constraints, interactions between signal nets and supply rails as well as thermal gradients due to interconnect and transistor self as well as mutual heating, and was used to verify successive iterations of deep sub-micron integrated circuit designs.