Patents by Inventor Yuri Freeman
Yuri Freeman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11929215Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.Type: GrantFiled: August 11, 2021Date of Patent: March 12, 2024Assignee: KEMET Electronics CorporationInventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
-
Publication number: 20210375555Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.Type: ApplicationFiled: August 11, 2021Publication date: December 2, 2021Inventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
-
Patent number: 11120949Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.Type: GrantFiled: December 13, 2018Date of Patent: September 14, 2021Assignee: KEMET Electronics CorporationInventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
-
Patent number: 10777362Abstract: An improved capacitor, and method of manufacturing the improved capacitor, is provided. The method includes deoxygenating and leaching the anode wire to produce a capacitor comprising an anode having a surface area of at least 4.0 m2/g or a charge density of at least 200,000 CV/g with the anode wire having an equivalent diameter of less than 0.30 mm extending from said anode. A dielectric is on the anode and a cathode is on the dielectric.Type: GrantFiled: November 15, 2019Date of Patent: September 15, 2020Assignee: KEMET Electronics CorporationInventors: Steven C. Hussey, Yuri Freeman, Christian Guerrero, Chris Stolarski, Jeffrey N. Kelly, Philip M. Lessner, Siva Jyoth Lingala, Javaid Qazi
-
Publication number: 20200090875Abstract: An improved capacitor, and method of manufacturing the improved capacitor, is provided. The method includes deoxygenating and leaching the anode wire to produce a capacitor comprising an anode having a surface area of at least 4.0 m2/g or a charge density of at least 200,000 CV/g with the anode wire having an equivalent diameter of less than 0.30 mm extending from said anode. A dielectric is on the anode and a cathode is on the dielectric.Type: ApplicationFiled: November 15, 2019Publication date: March 19, 2020Inventors: Steven C. Hussey, Yuri Freeman, Christian Guerrero, Chris Stolarski, Jeffrey N. Kelly, Philip M. Lessner, Siva Jyoth Lingala, Javaid Qazi
-
Publication number: 20190287730Abstract: An improved capacitor, and method of manufacturing the improved capacitor, is provided. The method includes deoxygenating and leaching the anode wire to produce a capacitor comprising an anode having a surface area of at least 4.0 m2/g or a charge density of at least 200,000 CV/g with the anode wire having an equivalent diameter of less than 0.30 mm extending from said anode. A dielectric is on the anode and a cathode is on the dielectric.Type: ApplicationFiled: March 15, 2018Publication date: September 19, 2019Inventors: Steven C. Hussey, Yuri Freeman, Christian Guerrero, Chris Stolarski, Jeffrey N. Kelly, Philip M. Lessner, Siva Jyoth Lingala, Javaid Qazi
-
Publication number: 20190148081Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.Type: ApplicationFiled: December 13, 2018Publication date: May 16, 2019Inventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
-
Patent number: 10290429Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.Type: GrantFiled: January 16, 2018Date of Patent: May 14, 2019Assignee: KEMET Electronics CorporationInventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
-
Patent number: 10062519Abstract: An improved capacitor and a method for forming an improved capacitor is detailed. The method comprises forming a tantalum anode from a tantalum powder with a powder charge of no more than 40,000 ?C/g; forming a dielectric on the anode by anodization at a formation voltage of no more than 100 V; and forming a conductive polymeric cathode on the dielectric wherein the capacitor has a breakdown voltage higher than the formation voltage.Type: GrantFiled: September 14, 2015Date of Patent: August 28, 2018Assignee: KEMET Electronics CorporationInventors: Yuri Freeman, Steven C. Hussey, Jimmy Dale Cisson, Philip M. Lessner
-
Publication number: 20180204680Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.Type: ApplicationFiled: January 16, 2018Publication date: July 19, 2018Inventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
-
Publication number: 20160079004Abstract: An improved capacitor and a method for forming an improved capacitor is detailed. The method comprises forming a tantalum anode from a tantalum powder with a powder charge of no more than 40,000 ?C/g; forming a dielectric on the anode by anodization at a formation voltage of no more than 100 V; and forming a conductive polymeric cathode on the dielectric wherein the capacitor has a breakdown voltage higher than the formation voltage.Type: ApplicationFiled: September 14, 2015Publication date: March 17, 2016Inventors: Yuri Freeman, Steven C. Hussey, Jimmy Dale Cisson, Philip M. Lessner
-
Patent number: 9147530Abstract: A process for providing an improved hermetically sealed capacitor which includes the steps of applying a solder and a flux to an interior surface of a case; flowing the solder onto the interior surface; remove flux thereby forming a flux depleted solder; inserting the capacitive element into the casing; reflowing the flux depleted solder thereby forming a solder joint between the case and the solderable layer; and sealing the case.Type: GrantFiled: September 4, 2013Date of Patent: September 29, 2015Assignee: KEMET Electronics CorporationInventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner, Qingping Chen, Javaid Qazi
-
Publication number: 20140061284Abstract: A process for providing an improved hermetically sealed capacitor which includes the steps of applying a solder and a flux to an interior surface of a case; flowing the solder onto the interior surface; remove flux thereby forming a flux depleted solder; inserting the capacitive element into the casing; reflowing the flux depleted solder thereby forming a solder joint between the case and the solderable layer; and sealing the case.Type: ApplicationFiled: September 4, 2013Publication date: March 6, 2014Applicant: Kemet Electronics CorporationInventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner, Qingping Chen, Javaid Qazi
-
Publication number: 20130241591Abstract: A method for screening electrolytic capacitors places a capacitor in series with a resistor, applying a test voltage and following the charge curve for the capacitor. A high voltage drop across the capacitor indicates high reliability and a low voltage drop is used to reject the piece. The leakage current is not adversely affected during the test.Type: ApplicationFiled: May 6, 2013Publication date: September 19, 2013Applicant: Kemet Electronics CorporationInventors: Jonathan Paulsen, Erik Karlsen Reed, Yuri Freeman
-
Patent number: 8441265Abstract: A method for screening electrolytic capacitors places a capacitor in series with a resistor, applying a test voltage and following the charge curve for the capacitor. A high voltage drop across the capacitor indicates high reliability and a low voltage drop is used to reject the piece. The leakage current is not adversely affected during the test.Type: GrantFiled: March 31, 2010Date of Patent: May 14, 2013Assignee: Kemet Electronics CorporationInventors: Jonathan Paulsen, Erik Reed, Yuri Freeman
-
Patent number: 8379371Abstract: A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.Type: GrantFiled: May 20, 2011Date of Patent: February 19, 2013Assignee: Kemet Electronics CorporationInventors: Qingping Chen, Yuri Freeman, Steven C. Hussey
-
Patent number: 8349030Abstract: A process for the manufacturing valve metal anodes is provided. The process includes: providing a valve metal powder; pressing the valve metal powder to form a pellet; first deoxidizing the pellet with a first reducing agent to form a first oxide of reducing agent on the pellet; removing the first oxide of reducing agent from the pellet to form a deoxidized pellet; sintering the deoxidized pellet to form a sintered pellet; second deoxidizing the sintered pellet with a second reducing agent to form a second oxide of reducing agent on the sintered pellet; and removing said second oxide of reducing agent.Type: GrantFiled: September 21, 2011Date of Patent: January 8, 2013Assignee: Kemet Electronics CorporationInventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner
-
Patent number: 8323361Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.Type: GrantFiled: June 22, 2011Date of Patent: December 4, 2012Assignee: Kemet Electronics CorporationInventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner, Yongjian Qiu
-
Patent number: 8325465Abstract: A capacitor is described with an NbO anode. The capacitor has an NbO anode and an NbO anode lead extending from the NbO anode. A dielectric is on the NbO anode and a conductor is on the dielectric.Type: GrantFiled: July 8, 2008Date of Patent: December 4, 2012Assignee: Kemet Electronics CorporationInventors: Yuri Freeman, Philip M. Lessner, Jeffrey Poltorak, Randolph S. Hahn
-
Patent number: RE47373Abstract: A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.Type: GrantFiled: January 30, 2015Date of Patent: April 30, 2019Assignee: KEMET Electronics CorporationInventors: Qingping Chen, Yuri Freeman, Steven C. Hussey