Patents by Inventor Yuri Freeman

Yuri Freeman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11929215
    Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.
    Type: Grant
    Filed: August 11, 2021
    Date of Patent: March 12, 2024
    Assignee: KEMET Electronics Corporation
    Inventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
  • Publication number: 20210375555
    Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.
    Type: Application
    Filed: August 11, 2021
    Publication date: December 2, 2021
    Inventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
  • Patent number: 11120949
    Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: September 14, 2021
    Assignee: KEMET Electronics Corporation
    Inventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
  • Patent number: 10777362
    Abstract: An improved capacitor, and method of manufacturing the improved capacitor, is provided. The method includes deoxygenating and leaching the anode wire to produce a capacitor comprising an anode having a surface area of at least 4.0 m2/g or a charge density of at least 200,000 CV/g with the anode wire having an equivalent diameter of less than 0.30 mm extending from said anode. A dielectric is on the anode and a cathode is on the dielectric.
    Type: Grant
    Filed: November 15, 2019
    Date of Patent: September 15, 2020
    Assignee: KEMET Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Christian Guerrero, Chris Stolarski, Jeffrey N. Kelly, Philip M. Lessner, Siva Jyoth Lingala, Javaid Qazi
  • Publication number: 20200090875
    Abstract: An improved capacitor, and method of manufacturing the improved capacitor, is provided. The method includes deoxygenating and leaching the anode wire to produce a capacitor comprising an anode having a surface area of at least 4.0 m2/g or a charge density of at least 200,000 CV/g with the anode wire having an equivalent diameter of less than 0.30 mm extending from said anode. A dielectric is on the anode and a cathode is on the dielectric.
    Type: Application
    Filed: November 15, 2019
    Publication date: March 19, 2020
    Inventors: Steven C. Hussey, Yuri Freeman, Christian Guerrero, Chris Stolarski, Jeffrey N. Kelly, Philip M. Lessner, Siva Jyoth Lingala, Javaid Qazi
  • Publication number: 20190287730
    Abstract: An improved capacitor, and method of manufacturing the improved capacitor, is provided. The method includes deoxygenating and leaching the anode wire to produce a capacitor comprising an anode having a surface area of at least 4.0 m2/g or a charge density of at least 200,000 CV/g with the anode wire having an equivalent diameter of less than 0.30 mm extending from said anode. A dielectric is on the anode and a cathode is on the dielectric.
    Type: Application
    Filed: March 15, 2018
    Publication date: September 19, 2019
    Inventors: Steven C. Hussey, Yuri Freeman, Christian Guerrero, Chris Stolarski, Jeffrey N. Kelly, Philip M. Lessner, Siva Jyoth Lingala, Javaid Qazi
  • Publication number: 20190148081
    Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.
    Type: Application
    Filed: December 13, 2018
    Publication date: May 16, 2019
    Inventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
  • Patent number: 10290429
    Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.
    Type: Grant
    Filed: January 16, 2018
    Date of Patent: May 14, 2019
    Assignee: KEMET Electronics Corporation
    Inventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
  • Patent number: 10062519
    Abstract: An improved capacitor and a method for forming an improved capacitor is detailed. The method comprises forming a tantalum anode from a tantalum powder with a powder charge of no more than 40,000 ?C/g; forming a dielectric on the anode by anodization at a formation voltage of no more than 100 V; and forming a conductive polymeric cathode on the dielectric wherein the capacitor has a breakdown voltage higher than the formation voltage.
    Type: Grant
    Filed: September 14, 2015
    Date of Patent: August 28, 2018
    Assignee: KEMET Electronics Corporation
    Inventors: Yuri Freeman, Steven C. Hussey, Jimmy Dale Cisson, Philip M. Lessner
  • Publication number: 20180204680
    Abstract: An improved capacitor is provided wherein the capacitor has an improved bond between the anode and anode wire. The anode comprises a pressed anode powder comprising a first density region and a second density region wherein the second density region has a higher density than the first density region. An anode wire extends into the second density region wherein the anode wire in the second density region is distorted by compression. This allows for better utilization of the metal powder surface area by allowing a lower bulk press density and lower sinter temperature while still achieving the necessary wire pull strength. In addition, this invention when utilized with deoxidation steps, results in sufficient wire pull strengths not possible otherwise.
    Type: Application
    Filed: January 16, 2018
    Publication date: July 19, 2018
    Inventors: Christian L. Guerrero, Jeffrey Poltorak, Yuri Freeman, Steve C. Hussey, Chris Stolarski
  • Publication number: 20160079004
    Abstract: An improved capacitor and a method for forming an improved capacitor is detailed. The method comprises forming a tantalum anode from a tantalum powder with a powder charge of no more than 40,000 ?C/g; forming a dielectric on the anode by anodization at a formation voltage of no more than 100 V; and forming a conductive polymeric cathode on the dielectric wherein the capacitor has a breakdown voltage higher than the formation voltage.
    Type: Application
    Filed: September 14, 2015
    Publication date: March 17, 2016
    Inventors: Yuri Freeman, Steven C. Hussey, Jimmy Dale Cisson, Philip M. Lessner
  • Patent number: 9147530
    Abstract: A process for providing an improved hermetically sealed capacitor which includes the steps of applying a solder and a flux to an interior surface of a case; flowing the solder onto the interior surface; remove flux thereby forming a flux depleted solder; inserting the capacitive element into the casing; reflowing the flux depleted solder thereby forming a solder joint between the case and the solderable layer; and sealing the case.
    Type: Grant
    Filed: September 4, 2013
    Date of Patent: September 29, 2015
    Assignee: KEMET Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner, Qingping Chen, Javaid Qazi
  • Publication number: 20140061284
    Abstract: A process for providing an improved hermetically sealed capacitor which includes the steps of applying a solder and a flux to an interior surface of a case; flowing the solder onto the interior surface; remove flux thereby forming a flux depleted solder; inserting the capacitive element into the casing; reflowing the flux depleted solder thereby forming a solder joint between the case and the solderable layer; and sealing the case.
    Type: Application
    Filed: September 4, 2013
    Publication date: March 6, 2014
    Applicant: Kemet Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner, Qingping Chen, Javaid Qazi
  • Publication number: 20130241591
    Abstract: A method for screening electrolytic capacitors places a capacitor in series with a resistor, applying a test voltage and following the charge curve for the capacitor. A high voltage drop across the capacitor indicates high reliability and a low voltage drop is used to reject the piece. The leakage current is not adversely affected during the test.
    Type: Application
    Filed: May 6, 2013
    Publication date: September 19, 2013
    Applicant: Kemet Electronics Corporation
    Inventors: Jonathan Paulsen, Erik Karlsen Reed, Yuri Freeman
  • Patent number: 8441265
    Abstract: A method for screening electrolytic capacitors places a capacitor in series with a resistor, applying a test voltage and following the charge curve for the capacitor. A high voltage drop across the capacitor indicates high reliability and a low voltage drop is used to reject the piece. The leakage current is not adversely affected during the test.
    Type: Grant
    Filed: March 31, 2010
    Date of Patent: May 14, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: Jonathan Paulsen, Erik Reed, Yuri Freeman
  • Patent number: 8379371
    Abstract: A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: February 19, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: Qingping Chen, Yuri Freeman, Steven C. Hussey
  • Patent number: 8349030
    Abstract: A process for the manufacturing valve metal anodes is provided. The process includes: providing a valve metal powder; pressing the valve metal powder to form a pellet; first deoxidizing the pellet with a first reducing agent to form a first oxide of reducing agent on the pellet; removing the first oxide of reducing agent from the pellet to form a deoxidized pellet; sintering the deoxidized pellet to form a sintered pellet; second deoxidizing the sintered pellet with a second reducing agent to form a second oxide of reducing agent on the sintered pellet; and removing said second oxide of reducing agent.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: January 8, 2013
    Assignee: Kemet Electronics Corporation
    Inventors: Steven C. Hussey, Yuri Freeman, Philip M. Lessner
  • Patent number: 8323361
    Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached there to. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.
    Type: Grant
    Filed: June 22, 2011
    Date of Patent: December 4, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Jake Yongjian Qiu, Steven C. Hussey, Philip M. Lessner, Yongjian Qiu
  • Patent number: 8325465
    Abstract: A capacitor is described with an NbO anode. The capacitor has an NbO anode and an NbO anode lead extending from the NbO anode. A dielectric is on the NbO anode and a conductor is on the dielectric.
    Type: Grant
    Filed: July 8, 2008
    Date of Patent: December 4, 2012
    Assignee: Kemet Electronics Corporation
    Inventors: Yuri Freeman, Philip M. Lessner, Jeffrey Poltorak, Randolph S. Hahn
  • Patent number: RE47373
    Abstract: A method for forming a hermetically sealed capacitor including: forming an anode; forming a dielectric on the anode; forming a conductive layer on the dielectric thereby forming a capacitive element; inserting the capacitive element into a casing; electrically connecting the anode to an exterior anode connection; electrically connecting the cathode to an exterior cathode connection; filling the casing with an atmosphere comprising a composition, based on 1 kg of atmosphere, of at least 175 g to no more than 245 g of oxygen, at least 7 g to no more than 11 g of water, at least 734 grams to no more than 818 grams of nitrogen and no more than 10 grams of a minor component; and hermetically sealing the casing with the atmosphere with the capacitive element contained in the casing.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: April 30, 2019
    Assignee: KEMET Electronics Corporation
    Inventors: Qingping Chen, Yuri Freeman, Steven C. Hussey