Abstract: A frequency conversion device, including a source of a pump beam of electromagnetic radiation of a first wavelength, and an array of mutually spaced semiconductor islands including at least one III-V semiconductor compound and configured so that the pump beam of electromagnetic radiation of the first wavelength incident upon the semiconductor islands and electromagnetic radiation of a second wavelength incident upon the semiconductor islands cause the semiconductor islands to emit electromagnetic radiation of a third wavelength different to the first and second wavelengths by at least one of a sum frequency generation process and a difference frequency generation process, wherein the semiconductor islands are supported by a transparent support such that the support is substantially transparent to radiation of the third wavelength, wherein at least the radiation of the third wavelength passes through the transparent support.

Abstract: A frequency conversion device, including a source of a pump beam of electromagnetic radiation of a first wavelength, and an array of mutually spaced semiconductor islands composed of at least one III-V semiconductor compound and configured so that the pump beam of electromagnetic radiation of the first wavelength incident upon the semiconductor islands and electromagnetic radiation of a second wavelength incident upon the semiconductor islands cause the semiconductor islands to emit electromagnetic radiation of a third wavelength different to the first and second wavelengths by at least one of a sum frequency generation process and a difference frequency generation process; wherein the semiconductor islands are supported by a transparent support such that the support is substantially transparent to radiation of the third wavelength, wherein at least the radiation of the third wavelength passes through the transparent support.

Abstract: A frequency conversion device and method is disclosed. In one aspect, a frequency device includes an array of mutually spaced semiconductor islands composed of at least one III-V semiconductor compound. The semiconductor islands are configured so that electromagnetic radiation of a first wavelength incident upon the semiconductor islands causes them to emit electromagnetic radiation of a second wavelength shorter than the first wavelength by a nonlinear frequency conversion process. The frequency device further includes a transparent support supporting the semiconductor islands. The transparent support is substantially transparent to radiation of the second wavelength, so that at least the radiation of the second wavelength passes through the transparent support.

Abstract: A frequency conversion device and method is disclosed. In one aspect, a frequency device includes an array of mutually spaced semiconductor islands composed of at least one III-V semiconductor compound. The semiconductor islands are configured so that electromagnetic radiation of a first wavelength incident upon the semiconductor islands causes them to emit electromagnetic radiation of a second wavelength shorter than the first wavelength by a nonlinear frequency conversion process. The frequency device further includes a transparent support supporting the semiconductor islands. The transparent support is substantially transparent to radiation of the second wavelength, so that at least the radiation of the second wavelength passes through the transparent support.