Patents by Inventor Yuri Kusakari
Yuri Kusakari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8339204Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.Type: GrantFiled: April 25, 2011Date of Patent: December 25, 2012Assignee: Renesas Electronics CorporationInventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
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Publication number: 20110199158Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.Type: ApplicationFiled: April 25, 2011Publication date: August 18, 2011Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
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Patent number: 7952434Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.Type: GrantFiled: April 30, 2009Date of Patent: May 31, 2011Assignee: Renesas Electronics CorporationInventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
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Publication number: 20090212873Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.Type: ApplicationFiled: April 30, 2009Publication date: August 27, 2009Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
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Publication number: 20080164947Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.Type: ApplicationFiled: February 12, 2008Publication date: July 10, 2008Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
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Patent number: 7348856Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.Type: GrantFiled: August 17, 2006Date of Patent: March 25, 2008Assignee: Renesas Technology Corp.Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
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Publication number: 20060290431Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.Type: ApplicationFiled: August 17, 2006Publication date: December 28, 2006Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
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Patent number: 7116175Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.Type: GrantFiled: July 14, 2004Date of Patent: October 3, 2006Assignee: Renesas Technology Corp.Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
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Publication number: 20050030107Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.Type: ApplicationFiled: July 14, 2004Publication date: February 10, 2005Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari