Patents by Inventor Yuri Kusakari

Yuri Kusakari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device
    Patent number: 8339204
    Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
    Type: Grant
    Filed: April 25, 2011
    Date of Patent: December 25, 2012
    Assignee: Renesas Electronics Corporation
    Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
  • Semiconductor device
    Publication number: 20110199158
    Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
    Type: Application
    Filed: April 25, 2011
    Publication date: August 18, 2011
    Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
  • Semiconductor device
    Patent number: 7952434
    Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: May 31, 2011
    Assignee: Renesas Electronics Corporation
    Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
  • Semiconductor device
    Publication number: 20090212873
    Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
    Type: Application
    Filed: April 30, 2009
    Publication date: August 27, 2009
    Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
  • Semiconductor device
    Publication number: 20080164947
    Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
    Type: Application
    Filed: February 12, 2008
    Publication date: July 10, 2008
    Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
  • Semiconductor device
    Patent number: 7348856
    Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
    Type: Grant
    Filed: August 17, 2006
    Date of Patent: March 25, 2008
    Assignee: Renesas Technology Corp.
    Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
  • Semiconductor device
    Publication number: 20060290431
    Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
    Type: Application
    Filed: August 17, 2006
    Publication date: December 28, 2006
    Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
  • Semiconductor device
    Patent number: 7116175
    Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
    Type: Grant
    Filed: July 14, 2004
    Date of Patent: October 3, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari
  • Semiconductor device
    Publication number: 20050030107
    Abstract: Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
    Type: Application
    Filed: July 14, 2004
    Publication date: February 10, 2005
    Inventors: Toshihiko Shimizu, Yoshikuni Matsunaga, Yuri Kusakari