Patents by Inventor Yuri Suzuki

Yuri Suzuki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9913058
    Abstract: According to one implementation, a sonic field sound system includes a computing platform having a hardware processor and a memory storing a sound modulation software code. The sound system further includes an acoustic object coupled to an input of the computing platform via a capacitance sensing unit. The acoustic object has one or more input interface(s) coupled to an output of the computing platform, and also has a resonant cavity having at least one outlet. The hardware processor is configured to execute the sound modulation software code to generate a waveform for driving the one or more input interface(s) of the acoustic object via the output of the computing platform to produce a sound.
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: March 6, 2018
    Assignee: Disney Enterprises, Inc.
    Inventors: Ali Israr, Ivan Poupyrev, Yoshio Ishiguro, Olivier Bau, Yuri Suzuki, James H. Auger
  • Publication number: 20020102428
    Abstract: The periodic stress and strain fields produced by a pure twist grain boundary between two single crystals bonded together in the form of a bicrystal are used to fabricate a two-dimensional surface topography with controllable, nanometer-scale feature spacings (e.g., from 50 nanometers down to 1.5 nanometers). The spacing of the features is controlled by the misorientation angle used during crystal bonding. One of the crystals is selected to be thin, on the order of 5-100 nanometers. A buried periodic array of screw dislocations is formed at the twist grain boundary. To bring the buried periodicity to the surface, the thin single crystal is etched to reveal an array of raised elements, such as pyramids, that have nanometer-scale dimensions. The process can be employed with numerous materials, such as gold, silicon and sapphire. In addition, the process can be used with different materials for each crystal such that a periodic array of misfit dislocations is formed at the interface between the two crystals.
    Type: Application
    Filed: November 8, 2001
    Publication date: August 1, 2002
    Inventors: Stephen L. Sass, Christopher K. Ober, Yuri Suzuki
  • Patent number: 6329070
    Abstract: The periodic stress and strain fields produced by a pure twist grain boundary between two single crystals bonded together in the form of a bicrystal are used to fabricate a two-dimensional surface topography with controllable, nanometer-scale feature spacings (e.g., from 50 nanometers down to 1.5 nanometers). The spacing of the features is controlled by the misorientation angle used during crystal bonding. One of the crystals is selected to be thin, on the order of 5-100 nanometers. A buried periodic array of screw dislocations is formed at the twist grain boundary. To bring the buried periodicity to the surface, the thin single crystal is etched to reveal an array of raised elements, such as pyramids, that have nanometer-scale dimensions. The process can be employed with numerous materials, such as gold, silicon and sapphire. In addition, the process can be used with different materials for each crystal such that a periodic array of misfit dislocations is formed at the interface between the two crystals.
    Type: Grant
    Filed: December 7, 2000
    Date of Patent: December 11, 2001
    Assignee: Cornell Research Foundation, Inc.
    Inventors: Stephen L. Sass, Christopher K. Ober, Yuri Suzuki
  • Patent number: 5728421
    Abstract: Ferrite films having excellent crystalline and magnetic properties are obtainable without high temperature (>500.degree. C.) processing if an appropriate template layer is deposited on a conventional substrate body (e.g., SrTiO.sub.3, cubic zirconia, Si), and the ferrite is deposited on the annealed template. The template is a spinel-structure metal oxide that has a lattice constant in the range 0.79-0.89 nm, preferably within about 0.015 nm of the lattice constant of the ferrite. Exemplarily, a NiFe.sub.2 O.sub.4 film was deposited at 400.degree. C. on a CoCr.sub.2 O.sub.4 template which had been deposited on (100) SrTiO.sub.3. The magnetization of the ferrite film at 4000 Oe was more than double the magnetization of a similarly deposited comparison ferrite film (NiFe.sub.2 O.sub.4 on SrTiO.sub.3), and was comparable to that of a NiFe.sub.2 O.sub.4 film on SrTiO.sub.3 that was annealed at 1000.degree. C.
    Type: Grant
    Filed: August 23, 1996
    Date of Patent: March 17, 1998
    Assignee: Lucent Technologies Inc.
    Inventors: Ernst Michael Gyorgy, Julia Mae Phillips, Yuri Suzuki, Robert Bruce van Dover, Suzanne Rachel Gyorgy
  • Patent number: 5665465
    Abstract: Articles according to the invention exemplarily comprise a magnetically hard oxide layer in contact with a magnetically soft oxide layer, with spins in the latter at room temperature exchange-coupled to the (oriented) spins in the former. Exemplarily both materials are ferrimagnetic spinel-type oxides, e.g., CoFe.sub.2 O.sub.4 /(Mn, Zn)Fe.sub.2 O.sub.4. Material combinations according to the invention can be advantageously used in high frequency circuit components such as inductors, since the magnetically soft layer can be in a substantially single domain state even after exposure to a magnetic field of considerable strength, e.g., up to about 500 Oe.
    Type: Grant
    Filed: November 6, 1995
    Date of Patent: September 9, 1997
    Assignee: Lucent Technologies Inc.
    Inventors: Ernst Michael Gyorgy, deceased, Julia Mae Phillips, Yuri Suzuki, Robert Bruce van Dover